Untitled
Abstract: No abstract text available
Text: 1 2 4 3 Electrical Current rating: 1.5 AMP Dielectirc withstanding voltage: AC 500V min for 1 minute Insulation resistance:500MQmin(at 500V DC) Contact resistance:30mi2 max. mated Working temperature:-55° to +105° RoHS COMPLIANT 17.48 .688 12.50 .492 2.11
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500MQmin
30mi2
B0001
1283P07H
128303S
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Untitled
Abstract: No abstract text available
Text: PLCC 1.27mm SMT Prototype Socket IC160 Series ORDERING INFORMATION P/N: 1060-0^4-30* * Blank: Tray 1: Tape & Reel 1: With Locator Pin 0: Without Locator Pin Pin Count CHARACTERISTICS MATERIAL 500MQ Min. 250VAC 30mi2 1A Per Contact -55°C to +85°C 20 Cycles
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IC160
500MQ
250VAC
30mi2
UL94V-0
ICI60-0204-30*
00x19
62x10
669x0
300x0
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50KMH-3 HIGH-SPEED SWITCHING USE FS50KMH-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .5 V D R IV E V .1 5 0 V d ss 2 .8 1 0 .2 rDS ON (MAX). 30mi2
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FS50KMH-3
30mi2
130ns
O-220FN
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Q67060-S7014
Abstract: No abstract text available
Text: SIEMENS PRÜFET BTS 728 L2 Smart High-Side Power Switch Two Channels: 2 x 60mo Status Feedback Product Summary Package Operating Voltage 4.75. .41V Vbb on Active channels one 30mi2 I l (NOM) 4.0A 6.0A l|_(SCr) 17A 17A R Nominal load current Current limitation
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30mi2
60mi2
1999-Mar-23
Q67060-S7014
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UM-06 HIGH-SPEED SWITCHING USE FS30UM-06 OUTLINE DRAWING LU U Dimensions in mm LU q we 10V DRIVE V d s s . 60V rDS ON (M A X ) . 30mi2
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FS30UM-06
30mi2
O-220
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE FS30ASH-06 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .60V . 30mi2 .30A 65ns APPLICATION M otor control, Lamp control, Solenoid control
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FS30ASH-06
30mi2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50KMJ-3 HIGH-SPEED SWITCHING USE FS50KMJ-3 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 4V DRIVE V d s s .15 0 V rDS ON (
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FS50KMJ-3
30mi2
125ns
O-220FN
57KH23
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30UMH-06 HIGH-SPEED SWITCHING USE FS30UMH-06 OUTLINE DRAWING Dimensions in mm LU U q w Q w r 2.5V DRIVE V d s s . 60V rDS ON (M AX) . 30mi2 Id . 30A
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FS30UMH-06
30mi2
O-220
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Untitled
Abstract: No abstract text available
Text: TSOP Open Top, Type-II IC235 Series FEATURES • Open top low actuaction force socket. CHARACTERISTICS 1.OOOMO minimum 700 VAC RMS for one minute C o n ta ct R esista n ce 30mi2 maximum at 10mA O p er a tin g T em p era tu re -40°C - +I50°C C o n ta ct F orce
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IC235
30mi2
IC235-032
IC235-0202-001
IC235-0242-002-
IC235-0242-003-*
IC235-0262-006-*
IC235-0282-004-*
IC235-0402-005-*
IC235-0442-007-*
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50SMJ-3 HIGH-SPEED SWITCHING USE FS50SMJ-3 OUTLINE DRAWING Dimensions in mm T PI T Q w r ' 4V DRIVE ' V d s s . 150V ' rDS ON (MAX). 30mi2
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FS50SMJ-3
30mi2
125ns
57KH23
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30VS-06 HIGH-SPEED SWITCHING USE FS30VS-06 OUTLINE DRAWING 1 q Dimensions in mm J w e 6 +i CD O w r 10V DRIVE V d s s . 60V rDS ON (M A X ) . 30mi2
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FS30VS-06
30mi2
O-220S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30VSH-06 HIGH-SPEED SWITCHING USE FS30VSH-06 OUTLINE DRAWING I q J w e 0 W r 2.5V DRIVE V d s s . 60V rDS ON (MAX). 30mi2 Id . 30A Integrated Fast Recovery Diode (TYR)
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FS30VSH-06
30mi2
O-220S
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Untitled
Abstract: No abstract text available
Text: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mo Current Sense Product Summary Operating Voltage Vbb on Active channels one 30mi2 On-state Resistance R on 5.5A Nominal load current Il(NOM) Current limitation 24A IL(SCr) Package 5.0. ,34V
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740S2
30mi2
15mi2
70jim,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS30VSJ-06 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm L J q w e 6 +i CD Q w r 4V DRIVE V d s s . 60V rDS ON (MAX). 30mi2 Id . 30A
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FS30VSJ-06
30mi2
O-220S
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50UMJ-3 HIGH-SPEED SWITCHING USE FS50UMJ-3 OUTLINE DRAWING Dimensions in mm LU U q w Q w r q w e r 4V DRIVE V d s s .150V GATE DRAIN SOURCE DRAIN rDS ON (
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FS50UMJ-3
30mi2
125ns
O-220
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Untitled
Abstract: No abstract text available
Text: cP DS04-13103-5E FUJITSU DATA SHEET LINEAR IC 6-CHANNEL 8-BIT A/D CONVERTER MB4053 6-CHANNEL 8-BIT A/D CONVERTER SUBSYSTEM The Fujitsu MB4053 is 6-channel, 8-bit, single-slope A/D converter subsystem designed to be used in a microprocessor based data control system. This device provides the analog functions
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DS04-13103-5E
MB4053
MB4053
MB8840/50,
MBL8048,
MBL6801.
16-pin
DIP-16C-F02
374T75LI
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ic 709 pin diagram
Abstract: 16-Bit Digital-to-Analog Converter - Voltage or Current Model lead side brazed hermetic Burr-Brown Application Note AN-165
Text: DAC707 DAC708/709 1 Microprocessor-Compatible 16-BIT DIGITAL-TO-ANALOG CONVERTERS • HIGH ACCURACY: Linearity Error ±0.003% of FSR max Differential Linearity Error ±0.006% of FSR max • MONOTONIC TO 14 BITS OVER SPECIFIED TEMPERATURE RANGE • HERMETICALLY SEALED
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16-BIT
DAC707JP/KP)
DAC708
DAC709
16bit
DAC707/08/09
ic 709 pin diagram
16-Bit Digital-to-Analog Converter - Voltage or Current Model
lead side brazed hermetic
Burr-Brown Application Note AN-165
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Untitled
Abstract: No abstract text available
Text: ¡ S s E I V IT E C H PORTABLE PENTIUM II & III POWER SUPPLY CONTROLLER PRELIMINARY - August 27, 1999 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1406 is a High Speed, High performance Hysteretic Mode controller. It is part of a two chip solution,
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TEL805-498-2111
SC1406
SC1405
SC1406
TSSOP-28
M0-153AE
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10A ferrite bead
Abstract: No abstract text available
Text: Application Note 17 Universal Serial Bus Power Management by Kevin Lynn Introduction Functions Power management and distribution is a major factor in correctly designing USB Universal Serial Bus peripherals. Proper methods of designing USB peripheral power distribu
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100mA
500mA.
10A ferrite bead
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QFP40
Abstract: ht 20*20
Text: Overview O rd e rin g C od e_D e s c rip tio n _ IC -B o d y S ize_ IC -D im . total _ P age N o. IC198-044-200x QFP40 0.8 pitch 1 0 x 10 13.2 x 13.2 ht. 2.45 max. 23 IC198-080-100X QFP80 0.8 pitch 14x20 16.8x22 .8
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IC198-044-200x
IC198-080-100X
IC198-080-200x
IC198-080-21
IC198-100-200x
IC198-1001-210x
IC198A-1000-100x
IC198-112-21
IC198-128-200x
IC198-208-210x
QFP40
ht 20*20
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE FS50VSJ-3 OUTLINE DRAWING 1 q Dimensions in mm J w e •G 1 6 +i CD O w r c\i q w e r 4V DRIVE V d s s .150V GATE DRAIN
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FS50VSJ-3
30mi2
125ns
O-220S
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n50v
Abstract: No abstract text available
Text: Supertex inn. HV421 High Voltage 1 REN Ring Generator Ordering Information Package Options Device 8-Lead SO HV421 HV421LG General Description Features □ Processed with HVCMOS technology □ 4.75V to 9.5V operating supply voltage □ DC to A C conversion
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HV421
HV421LG
HV421
VN2110
VP2110
-100V
OT-23
n50v
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Untitled
Abstract: No abstract text available
Text: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 3 0 mo Current Sense Product Summary Operating Voltage Package Vbb on Active channels: one On-state Resistance Ron Load Current (ISO) Current Limitation 5.0. ,34V two parallel
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840S2
30mi2
15mi2
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LTA 702 NE
Abstract: LTA 702 N lm 703 op amp ac701k LTA 703s 703JP LTA 703 S LTA 702
Text: BURR - BROW N [ DAC701 DAC702 DAC703 ¿ ^ 3 ] Monolithic 16-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES • MONOTONIC at 15 bits OVER FULL SPECIFICATION TEMPERATURE RANGE VOUT AND Iout MODELS HIGH ACCURACY: Linearity Error ±0.0015% of FSR max Differential Linearity Error ±0.003% of FSR
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DAC701
DAC702
DAC703
16-Bit
DAC70,
DAC71,
DAC72
54/74C-
54/74HC-compatible
24-pin
LTA 702 NE
LTA 702 N
lm 703 op amp
ac701k
LTA 703s
703JP
LTA 703 S
LTA 702
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