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    30G MARKING Search Results

    30G MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    30G MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiRA10DP

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR316DP 2002/95/EC SiR316DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR428DP 2002/95/EC SIR428DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR316DP 2002/95/EC SiR316DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    1093 SO-8

    Abstract: SIR428DP-T1-GE3 SO8 1093 SiR428DP
    Text: New Product SiR428DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0075 at VGS = 10 V 30g 0.0095 at VGS = 4.5 V 30g VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR428DP 2002/95/EC SIR428DP-T1-GE3 18-Jul-08 1093 SO-8 SIR428DP-T1-GE3 SO8 1093

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIS468DN-T1-GE3

    Abstract: No abstract text available
    Text: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS468DN SiS468DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS468DN SiS468DN-T1-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S1209

    Abstract: SiS890DN
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN SiS890DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S1209

    Untitled

    Abstract: No abstract text available
    Text: SiS468DN Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) () (Max.) ID (A)f 0.0195 at VGS = 10 V 30g 0.0210 at VGS = 7.5 V 30g 0.0320 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS468DN SiS468DN-T1-emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS890DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) ID (A)f 0.0235 at VGS = 10 V 30g 0.0245 at VGS = 7.5 V 30g 0.0315 at VGS = 4.5 V 28.5 • • • • Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm


    Original     		PDF SiS890DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Common mode SC Coils – Small Type SC-G/GS Type [RoHS [RoHS Compliant] Compliant] Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G


    Original     		PDF SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G SC-01-E121G SC-01-E150G SC-02-06G

    sc-01-e100g

    Abstract: SC-01-20G
    Text: Common mode SC Coils – Small Type SC-G/GS Type [RoHS [RoHS Compliant] Compliant] Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G


    Original     		PDF SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G SC-01-E121G SC-01-E150G SC-02-06G sc-01-e100g

    KC547

    Abstract: sc-01-e100g SC-03-06G
    Text: Common mode SC Coils – Small Type SC-G/GS Type [RoHS [RoHS Compliant] Compliant] Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G


    Original     		PDF SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G SC-01-E121G SC-01-E150G SC-02-06G KC547 sc-01-e100g SC-03-06G

    Untitled

    Abstract: No abstract text available
    Text: Common mode SC Coil – Small Type SC-G/GS Types Model SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G ※ SC-01-E121G ※ SC-01-E150G ※ SC-02-06G SC-02-10G SC-02-20G SC-02-30G SC-03-06G SC-03-10G SC-01-10GS SC-01-20GS SC-02-10GS


    Original     		PDF SC-01-06G SC-01-10G SC-01-20G SC-01-30G SC-01-50G SC-01-80G SC-01-E100G SC-01-E121G SC-01-E150G SC-02-06G

    30GWJ2CZ47C

    Abstract: No abstract text available
    Text: TOSHIBA 30GWJ2CZ47C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30G W J 2 C Z 4 7 C Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION 10.3M AX. 0 3.2 ± 0.2 • Repetitive Peak Reverse Voltage : Vrrm = 40V


    OCR Scan     		PDF 30GWJ2CZ47C 500ns, -VD-40V-^ 30GWJ2CZ47C

    HJ3H

    Abstract: 30GWJ2CZ47 30GWJ2CZ47C
    Text: TOSHIBA 30GWJ2CZ47C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30G W J 2 C Z 4 7 C Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION 10.3M AX. 0 3.2 ± 0.2 SI • Repetitive Peak Reverse Voltage : V rrm = 40V


    OCR Scan     		PDF 30GWJ2CZ47C WJ2CZ47C 500ns, 961001EAA2' HJ3H 30GWJ2CZ47 30GWJ2CZ47C

    1216D

    Abstract: 30GWJ2C 30GWJ2C42C
    Text: TOSHIBA 30GWJ2C42C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30G W J 2 C 4 2 C Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION 15.9 MAX. • Repetitive Peak Reverse Voltage : V rrm = 40V • Average Output Rectified Current : Iq = 30A


    OCR Scan     		PDF 30GWJ2C42C WJ2C42C 500ns, 961001EAA2' 1216D 30GWJ2C 30GWJ2C42C