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    VTB6060B

    Abstract: VTB6061B
    Text: 5bE D 3030b0S DODlOHb 177 H V C T V T B 6 0 6 0B , 6061 B VTB Process Photodiodes E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­


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    PDF VTB6060B, T-41-51 x1012 xlO12 VTB6060B VTB6061B

    Pyroelectric Detectors

    Abstract: J15TE HgCdTe judson PA-100 judson PA-090
    Text: E G & G 3TE T> m JUDSON J15TE Series 3030b0S 00 002 37 7 B J U D Long-Wave Mercury Cadmium Telluride Detectors 10.6 jam T - V / 'V / General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser


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    PDF 3030b0S J15TE 100Hz 20MHz) J15TE3 J15TE4 Pyroelectric Detectors HgCdTe judson PA-100 judson PA-090

    InGaAs photodiode

    Abstract: Photodiode Array linear focal plane array J18M PHOTODIODE current voltage amplifier array 16 Photodiode-Array linear array photodiode element photo diode array photo diode array amplifier photodiode linear array
    Text: ^ EGgG JU D SO IM _ Multiplexed InGaAs Photodiode Arrays 0.8 to 1.7 jim Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elem ents


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    PDF 50sec 500ii J18M-28P 3030b05 GDDD334 InGaAs photodiode Photodiode Array linear focal plane array J18M PHOTODIODE current voltage amplifier array 16 Photodiode-Array linear array photodiode element photo diode array photo diode array amplifier photodiode linear array

    103z

    Abstract: j18te L-086 c 103z
    Text: General • J15TE4:10 Series J15T E Series "Long-Wave" detectors are photoconductive HgCdTe elem ents on therm oelectric coolers for C 0 2 laser detection a t 10.6p.m. The HgCdTe detectors offer significant advantages over altern ativ e pyroelectric detectors, including low microphonics,


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    PDF J15TE4 100Hz 20MHz) J15TE3 103z j18te L-086 c 103z

    InGaAs photodiode

    Abstract: photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements
    Text: J k EGgG JUDSON Description The J18M Series detector is a self-scanned Indium Gallium Arsenide array with response to wavelengths ranging from 800 nm to 1700 nm. The array has elements configured in a linear orientation with standard array lengths in excess of one inch.


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    PDF 50sec 3030b05 InGaAs photodiode photodiode 256 elements photodiode linear array 256 focal plane array pin PA1300 photodiode 512 elements

    1900nm

    Abstract: InGaAs PIN photodiode 2600 nm InGaAs PIN photodiode Long Wavelength 2.6 J18-18I-R01M-2 detector active area size nep 2600nm J18-18I-R250U-2
    Text: J L e g s g JUDSoni Extended InGaAs Photodiode Operating Notes 1.0 to 2.6 |im General Package Options J 18 Series detectors are high quality extended w avelength Indium Gallium Arsenide photo­ diodes for use in the w avelength range from 800 to 2600 nanom eters.


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    PDF 1900nm, 2200nm 2600nm. G00G332 1900nm InGaAs PIN photodiode 2600 nm InGaAs PIN photodiode Long Wavelength 2.6 J18-18I-R01M-2 detector active area size nep 2600nm J18-18I-R250U-2