Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R A 5 1 3 Triple 125MHz Video Amplifier July 1994 Description Features • Wide Unity Gain B a n d w id th .125MHz • Slew R a t e . 475V/ns
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125MHz
125MHz
75V/ns
HA5013
1-800-4-HARRIS
00574fl2
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Untitled
Abstract: No abstract text available
Text: ACTS541T D a ta s h e e t Ju ly 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended
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ACTS541T
100kRAD
MIL-PRF-38535
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: HA5H24 ¡31 HARRIS U L J M S E M I C O N D U C T O R MJ r m mm iv Quad 125MHz Video Current Feedback Amplifier with Disable November 1996 Features Description • Quad Version of HA-5020 The HA5024 is a quad version of the popular Harris HA5020. It features wide bandwidth and high slew rate, and
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HA5H24
HA-5020
800nV
125MHz
HA5024
HA5020.
HA5024
2680gm
2600nm
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Untitled
Abstract: No abstract text available
Text: U U fB H a r r is SEMI CONDUCTOR H A-5127 March 1993 Ultra-Low Noise Precision Operational Amplifier f MM M M m— M Features Description • H ig hspeed . 10V/|i8 The HA-5127 monolithic operational amplifier features an
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HA-5127
00V/V,
HA-5127,
HA-5127A
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Untitled
Abstract: No abstract text available
Text: ACTS573T Semiconductor January 1999 Data Sheet Radiation Hardened Octal Three-State Transparent Latch Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended
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ACTS573T
100kRAD
MIL-PRF-38535
1-800-4-HARR
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Untitled
Abstract: No abstract text available
Text: ACTS573T July 1999 Data Sheet Radiation Hardened Octal Three-State Transparent Latch Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended
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ACTS573T
100kRAD
MIL-PRF-38535
ACTS573T
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: HA5024 HARRIS S E M I C O N D U C T O R Q uad November 1996 1 2 5 M H z V id e o C u r r e n t F e e d b a c k A m p lif ie r w ith D is a b le Features Description • Quad Version of HA-5020 The HA5024 is a quad version of the popular Harris HA5020. It features wide bandwidth and high slew rate, and
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HA5024
HA-5020
HA5024
HA5020.
800nV
125MHz
2680nm
2600nm
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Untitled
Abstract: No abstract text available
Text: m U U h a r r i s H a S E M I C O N D U C T O R Quad Version of HA-5020 • Individual Output Enable/Disable Input Offset Voltage. 800^V Wide Unity Gain Bandwidth.125MHz Slew R a te . 475V/|is
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HA-5020
125MHz
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p36a
Abstract: No abstract text available
Text: HA-5137 HARRIS S E M I C O N D U C T O R Ultra-Low Noise Precision Wideband Operational Amplifier March 1993 Features Description • H ig h s p e e d .20V/^s The HA-5137 monolithic operational am plifier features an
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HA-5137
HA-5137
63MHz)
800V/mV)
126dB)
00V/V
002nV/Div.
08nVp
p36a
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1900nm
Abstract: InGaAs PIN photodiode 2600 nm InGaAs PIN photodiode Long Wavelength 2.6 J18-18I-R01M-2 detector active area size nep 2600nm J18-18I-R250U-2
Text: J L e g s g JUDSoni Extended InGaAs Photodiode Operating Notes 1.0 to 2.6 |im General Package Options J 18 Series detectors are high quality extended w avelength Indium Gallium Arsenide photo diodes for use in the w avelength range from 800 to 2600 nanom eters.
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1900nm,
2200nm
2600nm.
G00G332
1900nm
InGaAs PIN photodiode 2600 nm
InGaAs PIN photodiode Long Wavelength 2.6
J18-18I-R01M-2
detector active area size nep
2600nm
J18-18I-R250U-2
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Untitled
Abstract: No abstract text available
Text: ACTS541T Semiconductor January 1999 Data Sheet Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended
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ACTS541T
100kRAD
MIL-PRF-38535
1-800-4-HARR
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slmn
Abstract: InGaAs PIN photodiode 2600 nm
Text: J k EGgG JUDSON Extended InGaAs Photodiode Operating Notes 1.0 to 2.6 |im General Package Options J18 Series detectors are high quality extended wavelength Indium Gallium Arsenide photo diodes for use in the wavelength range from 800 to 2600 nanometers.
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J18-18I-R250U-2
J18-18I-R01M-2
J18-5I-R02M-2
3G30bQS
t35tt0
303DbDS
DnoD33E
slmn
InGaAs PIN photodiode 2600 nm
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