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    TDK Corporation IRB02A-300X300X1

    RF ABSORB SHEET 300MMX11.811"
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    Phoenix Contact E S6 A 300X300X160

    Junction box - material: Stainless steel - 316L/1.4404 - surface resistance: brushed - silver - 300 mm x 300 mm x 160 mm - type of locking: Screw-on cover - scope of supply - ATD: Mounting plate - Fixing angle with mounting screws - M12 grounding bolts - affixed externally - Installation notes - Mounting plate
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics E S6 A 300X300X160
    • 1 $687.23
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    300X300X Datasheets Context Search

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    parabolic antenna

    Abstract: antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber
    Text: EMC Components IP-B, IB, IS, IR, IF-P, IF-R Material Radio Wave Absorbers Radio Wave Absorbing Materials A key factor in absorbing unwanted electromagnetic energy efficiently and completely is selecting the most appropriate materials for the application. This selection process must take into account


    Original     		PDF 12GHz 30MHz parabolic antenna antenna for 12GHZ parabolic microwave antenna Types of Radar Antenna long wave RADIO absorber

    KTB688B

    Abstract: KTD718
    Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25


    Original     		PDF KTB688B KTD718B. KTB688B KTD718

    KTD998

    Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
    Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃


    Original     		PDF KTD998 KTB778. 200x200x2mm 100x100x2mm 300x300x2mm KTD998 transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet

    transistor ktd718

    Abstract: KTB688 KTD718
    Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ


    Original     		PDF KTB688 KTD718. 100x100x2mm transistor ktd718 KTB688 KTD718

    ktd718

    Abstract: ktd718 datasheet transistor ktd718 KTB688
    Text: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ


    Original     		PDF KTD718 KTB688. 100mS 300x300x2mm 200x200x2mm 100x100x2mm ktd718 ktd718 datasheet transistor ktd718 KTB688

    al205

    Abstract: KTA1036 KTC2016
    Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING


    Original     		PDF KTC2016 KTA1036. al205 KTA1036 KTC2016

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES E Complementary to KTD718. C Recommended for 45 50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25 d CHARACTERISTIC


    Original     		PDF KTB688 KTD718.

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTD718B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTB688B. D E L MAXIMUM RATING Ta=25


    Original     		PDF KTD718B KTB688B. 100mS 300x300x2mm 200x200x2mm 100x100x2mm

    TA-2807

    Abstract: D138 DBA250 DBA250C DBA250G 41000
    Text: 注文コード No. N 2 1 4 5 C DBA250 No. N 2 1 4 5 C 41000 半導体ニューズ No.2145B とさしかえてください。 DBA250 特長 シリコン拡散接合形 25.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。


    Original     		PDF DBA250 2145B DBA250C DBA250G TA-2807 ID01187 D138 DBA250 DBA250C DBA250G 41000

    TA-2807

    Abstract: D138 DBA250 DBA250C DBA250G
    Text: 注文コード No. N 2 1 4 5 C DBA250 No. N 2 1 4 5 C 41000 半導体ニューズ No.2145B とさしかえてください。 DBA250 特長 シリコン拡散接合形 25.0A 単相ブリッジ整流素子 ・樹脂モールド構造。 ・ガラスパッシベーションによる高信頼製品。


    Original     		PDF DBA250 2145B DBA250C DBA250G TA-2807 ID01187 D138 DBA250 DBA250C DBA250G

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    EMC 2112

    Abstract: ffd 1551 ACH32C-103-T MZA3216Y601 MZA3216S601A ACF451832-221-TD01 ACH32C-104-T 445-2201-1-ND ACH4518-153-T ACH4518-332-TD01
    Text: Flexield Noise Suppression Sheets - Flexible Ferrite Material NEW! Feedthrough Filters and Capacitors Resin Fill Filters – FFD Series The FFD series is designed to meet the very stringent safety requirements of EN133200 class Y4 including the 2500V pulse test.


    Original     		PDF EN133200 130VDC 2500VDC 15000M 5000s UL94V-0 10FFD6-CA 32FFD6-CA 10FFD6-HE ACH4518-680-TD01 EMC 2112 ffd 1551 ACH32C-103-T MZA3216Y601 MZA3216S601A ACF451832-221-TD01 ACH32C-104-T 445-2201-1-ND ACH4518-153-T ACH4518-332-TD01

    AQJ119V

    Abstract: YG6111 3ssr AQJ112V AQJ112VY AQJ116V AQJ119VY AQJ212V AQJ216V AQJ219V
    Text: ソリッドステートリレー AQ-J RoHS対応 強化絶縁規格取得（60950-1） 小型タブ端子SSR。スリム放熱器一体型もラインアップ。 特 長 ●小型サイズW28xL38×H30mm ●外来サージ吸収に優れるバリスタ内蔵付をご用意


    Original     		PDF H30mm 5264V 1828V 1018V AQJ219V AQJ216V AQJ412V AQJ419V AQJ119V YG6111 3ssr AQJ112V AQJ112VY AQJ116V AQJ119VY AQJ212V AQJ216V AQJ219V

    inductive

    Abstract: S T A 933 mt3516
    Text: GLASS PASSIVATED SINGLE-OHASE BPIDGE RECTIFIER VOLTAGE RANGE MT3508G THRU MT3516G CURRENT • • • 35 Amperes MT-35 FEATURES • 1600 Volts 1.137 28.9 1.118(28.4) Integrally molded heatsink provides very low thermal resistance for maximum heat dissipation


    Original     		PDF MT3508G MT3516G MT-35 inductive S T A 933 mt3516

    2SC520A

    Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
    Text: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,


    OCR Scan     		PDF -130V, -110V 2SA656A) 2SC519A, 2SC520A 2SC521A. 2SA656A 2SA657A 2SA658A 2SA656A TOSHIBA TV IC regulator 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73

    KTA1036

    Abstract: KTC2016
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		PDF KTA1036 KTC2016. 220AB 300x300x2mm 200x200x2mm 100x100x1mm 50x50xlmm KTA1036 KTC2016

    KTB989

    Abstract: KTD1352
    Text: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF KTB989 KTD1352. 220AB 50x50x2mm 50x50xlmm D50x50xlmm KTB989 KTD1352

    2SB996

    Abstract: 2SD1356 300X300X8
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA '• DE J T □=!7 S S 0 □ □ □ 7 ci54 S | ~ 5òC '0 7 9 Z* <D I S CR ET E/O PT O SILICON NPN T R IP LE 'D IFFU SE D TVPË; r t.u -r-> ? 1 ; POWER AMPL-IFIER .APPLICATIONS. Unit in Iran m g FEATURES i V •»„


    OCR Scan     		PDF 2SB996 300X300X8 200X800X8mmk 100X10 100X100X1 50X50X2 50X50X1 2SB996 2SD1356

    D 871 Toshiba

    Abstract: 2SB993 2SD1363
    Text: TOSHIBA -CDISCRETE/0PT03- 9097250 T O S H IB A 5h DE~|TCn7250 □□□7cì3h 1 <D I S C R E T E / O P T O > SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. _ POWER AMPLIFIER APPLICATIONS. 1 Û 3 M A X .


    OCR Scan     		PDF -CDISCRETE/0PT03- 2SB993 300X300X3mmA 200X200X2rmn 150XI50Xi3ramA 50X50X2ramA^ 35X35Xlmmk 85xa5XlmmA^ IIIIlll111llltlltl lttlltiltlllllllll111llllltllia11ltiltlll D 871 Toshiba 2SD1363

    2SC519A

    Abstract: 521A 2SC520a 2SC521A 2sc5 520a
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.


    OCR Scan     		PDF 2SC519A 2SC519A) 2SC520A 2SC521A VCC-30V 2SC519A, 521A 2SC521A 2sc5 520a

    2sb688

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB688 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 0 3.2±0.2 FEATURES: . Complementary to 2SD718. V- . Recommended for AS'-SOW audio frequency amplifier output stage. ft n r + 0.3 0 1.0 — a 2 5 MAXIMUM RATINGS Ta=25°c


    OCR Scan     		PDF 2SB688 2SD718. Tc-25 300X300x2mmA/ 2sb688

    KTD718

    Abstract: KTB688 transistor ktd718
    Text: SEMICONDUCTOR T E C H N IC A L D A T A KTD718 t r ip le d iffu s e d n p n t r a n s is t o r HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 45—50W Audio Frequency Amplifier. • Output Stage. • Complementary to KTB688. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTD718 KTB688. 300x300x2mm 200x200x2mm 100x100x2mm KTD718 KTB688 transistor ktd718

    2SC779

    Abstract: transistor 2SC779 TRANSISTOR 2SC ls 11m
    Text: 2SC SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o o o ««£*»*«» o H ig h 779 4 •>t- v r m INDUSTRIAL APPLICATIONS Tksr-tofatonm V o lta g e S w it c h in g Pow er and A m p lifie r , TV H o r iz o n ta l H ig h V o lta g e O u tp u t U n it in mm A p p lic a ­


    OCR Scan     		PDF TC-16A TB-83 2-13A1A 300ms 2SC779 2SC779-R 2SC779-0 2SC779-Y 10/is transistor 2SC779 TRANSISTOR 2SC ls 11m

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation


    OCR Scan     		PDF KTB988 KTD1351. 50x50xlmm