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    300V 32A MOSFET Search Results

    300V 32A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    300V 32A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3772-01

    Abstract: No abstract text available
    Text: 2SK3772-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3772-01 O-220AB 2SK3772-01

    diode sj

    Abstract: 2SK3774-01L
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L diode sj

    2sk3773

    Abstract: 12/24 v dc-dc converter schematic 2SK3773-01MR
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F 2sk3773 12/24 v dc-dc converter schematic 2SK3773-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK3772-01 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3772-01 O-220AB

    300v 32a mosfet

    Abstract: No abstract text available
    Text: 2SK3773-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F Repetitive200 300v 32a mosfet

    fr 2955

    Abstract: 2SK3775-01
    Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3775-01 fr 2955 2SK3775-01

    2955 mos

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ FUJI POWER MOSFET 200311 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3774-01L 2955 mos

    2SK3775-01

    Abstract: No abstract text available
    Text: 2SK3775-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings mm Super FAP-G Series 200406 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3775-01 2SK3775-01

    48n60a3

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V IXGH48N60A3D1 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V


    Original     		PDF IC110 IXGH48N60A3D1 O-247 48n60a3

    Untitled

    Abstract: No abstract text available
    Text: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V


    Original     		PDF IXGH48N60A3D1 IC110 O-247 IC110

    IXGH48N60A3D1

    Abstract: 48N60A3 48n60 IXGH48N60
    Text: GenX3TM 600V IGBT with Diode IXGH48N60A3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH48N60A3D1 IC110 O-247 062in. IXGH48N60A3D1 48N60A3 48n60 IXGH48N60

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR64N60Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR64N60Q3 300ns ISOPLUS247 E153432 64N60Q3

    IXFR64N60P

    Abstract: No abstract text available
    Text: IXFR64N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 36A  105m 200ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFR64N60P 200ns ISOPLUS247 E153432 100ms 80N60P3 5-15-14-F IXFR64N60P

    IXFR64N60Q3

    Abstract: No abstract text available
    Text: Advance Technical Information IXFR64N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 42A Ω 104mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions


    Original     		PDF IXFR64N60Q3 300ns ISOPLUS247 E153432 64N60Q3 IXFR64N60Q3

    2sk3773

    Abstract: 2SK3773-01MR sd 2955
    Text: 2SK3773-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3773-01MR O-220F dV/d200 2sk3773 2SK3773-01MR sd 2955

    SPF12

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L SPF12

    Untitled

    Abstract: No abstract text available
    Text: 2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators


    Original     		PDF 2SK3774-01L

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 64N60P ISOPLUS247 E153432

    64N60

    Abstract: 64N60P ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 64N60P ISOPLUS247 E153432 64N60 64N60P ISOPLUS247

    DSEP 15-06A

    Abstract: 20N60B2D1 IXSH20N60B2D1 IC ti 072
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 20N60B2D1 IC110 DSEP 15-06A 20N60B2D1 IXSH20N60B2D1 IC ti 072

    Untitled

    Abstract: No abstract text available
    Text: IXSH 20N60B2D1 High Speed IGBT Short Circuit SOA Capability VCES = 600 V I C25 = 35 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 20N60B2D1 IC110 5-06A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK64N60Q3 IXFX64N60Q3 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK64N60Q3 IXFX64N60Q3 300ns O-264 IXFK64N50Q3 IXFX64N50Q3 64N60Q3

    32N60CD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM VCES IC25 IXGR 32N60CD1 = 600 V = 45 A = 2.7 V = 55 ns VCE SAT tfi(typ) (Electrically Isolated Backside) Preliminary data sheet Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 32N60CD1 2x31-06B 32N60CD1

    2x31-06B

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode ISOPLUS247TM IXGR 32N60CD1 VCES IC25 VCE SAT typ tfi(typ) (Electrically Isolated Backside) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V


    Original     		PDF ISOPLUS247TM 32N60CD1 247TM 2x31-06B 2x31-06B