300V 0.5A NPN TRANSISTOR Search Results

300V 0.5A NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

300V 0.5A NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2023 Abstract: No abstract text available Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W	Original	2SC2023 MT-25 300min 30min 10typ 75typ 100x100x2 50x50x2 2SC2023	PDF
2SC5271 Abstract: 300V regulator FM20 Text: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A	Original	2SC5271 Pulse10) 100max 200min O220F) 15min 10typ 45typ 2SC5271 300V regulator FM20	PDF
JANS2N2484 Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373 Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930	Original	JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373	PDF
18w sot23 transistor Abstract: 300V 0.5A NPN transistor Text: FMMT42CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)	Original	FMMT42CSM FMMT42" FMMT42CSM FMMT42CSM-JQR-B FMMT42DCSM FMMT42DCSM-JQR-B 50MHz 18w sot23 transistor 300V 0.5A NPN transistor	PDF
LB-008 Abstract: lc08a LB 125 transistor Triple Diffused Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	OCR Scan	KSC5338D/KSC5338DW O-220 LB-008 lc08a LB 125 transistor Triple Diffused	PDF
Untitled Abstract: No abstract text available Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	OCR Scan	KSC5338D/KSC5338DW O-220 T0-220 C35siÃ	PDF
Untitled Abstract: No abstract text available Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5338D/KSC5338DW O-220 KSC5338D/KSC5338DW	PDF
Untitled Abstract: No abstract text available Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5338D/KSC5338DW O-220 O-220	PDF
Untitled Abstract: No abstract text available Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	KSC5338D/KSC5338DW O-220 O-220	PDF
NPN Transistor 10A 400V Abstract: 2N5663 300V transistor npn 2a LE17 Text: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	2N5663 100mW/ O-205AA) NPN Transistor 10A 400V 2N5663 300V transistor npn 2a LE17	PDF
etd 41 Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41 Text: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	BUF410/41 BUF41 OA/41 100KHz 10OKHz BUF410/410I BUF410A/410AI etd 41 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 NPN Transistor 10A 400V OA41	PDF
2SC1050 Abstract: No abstract text available Text: Product Specification www.jmnic.com 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector	Original	2SC1050 2SC1050	PDF
2sc1050 Abstract: npn transistors 300V 0,5a Text: SavantIC Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter	Original	2SC1050 2sc1050 npn transistors 300V 0,5a	PDF
Untitled Abstract: No abstract text available Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD	Original	2N5253 O-205AD)	PDF

IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
2sc105 Abstract: 2SC1050 Text: Inchange Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter	Original	2SC1050 2sc105 2SC1050	PDF
Untitled Abstract: No abstract text available Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	2N5665N1 O-276AA)	PDF
Untitled Abstract: No abstract text available Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	2N5665N1 O-276AA)	PDF
Untitled Abstract: No abstract text available Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	2N5665N1 O-276AA)	PDF
LE17 Abstract: NPN Transistor 10A 400V 300V transistor npn .5a Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	2N5665N1 O-276AA) LE17 NPN Transistor 10A 400V 300V transistor npn .5a	PDF
NPN Transistor 1.0A 400V Abstract: LE17 SMD-0.5 NPN Transistor 10A 400V Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO	Original	2N5667N1 O-276AA) NPN Transistor 1.0A 400V LE17 SMD-0.5 NPN Transistor 10A 400V	PDF
voltage regulators 300v dc Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w Text: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89	Original	2N3439 2N3440 2N3439" 2N3439CECC 2N3439CSM4 2N3439CSM4-JQR-B 2N3439CSM4R 10/20m voltage regulators 300v dc LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w	PDF
2N4863 Abstract: SDT5501 SDT5556 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT 300V 0.5A NPN transistor Text: -Æittron PKOOdJXgTr ÄTÄ1L©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices, Inc. NPN EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 91 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)	OCR Scan	203mm) 2N4863 SDT5501 SDT5556 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT 300V 0.5A NPN transistor	PDF
transistor VCE 1000V Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:	Original	NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a	PDF

300V 0.5A NPN TRANSISTOR Search Results

300V 0.5A NPN TRANSISTOR Result Highlights (5)

300V 0.5A NPN TRANSISTOR Datasheets Context Search

2SC2023

2SC5271

JANS2N2484

18w sot23 transistor

LB-008

Untitled

Untitled

Untitled

Untitled

NPN Transistor 10A 400V

etd 41

2SC1050

2sc1050

Untitled

IRF9210

2sc105

Untitled

Untitled

Untitled

LE17

NPN Transistor 1.0A 400V

voltage regulators 300v dc

2N4863

transistor VCE 1000V