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    300V 0.5A NPN TRANSISTOR Search Results

    300V 0.5A NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    300V 0.5A NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2023

    Abstract: No abstract text available
    Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W


    Original     		PDF 2SC2023 MT-25 300min 30min 10typ 75typ 100x100x2 50x50x2 2SC2023

    2SC5271

    Abstract: 300V regulator FM20
    Text: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A


    Original     		PDF 2SC5271 Pulse10) 100max 200min O220F) 15min 10typ 45typ 2SC5271 300V regulator FM20

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


    Original     		PDF JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373

    18w sot23 transistor

    Abstract: 300V 0.5A NPN transistor
    Text: FMMT42CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) FEATURES 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF FMMT42CSM FMMT42" FMMT42CSM FMMT42CSM-JQR-B FMMT42DCSM FMMT42DCSM-JQR-B 50MHz 18w sot23 transistor 300V 0.5A NPN transistor

    Untitled

    Abstract: No abstract text available
    Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5338D/KSC5338DW O-220 KSC5338D/KSC5338DW

    Untitled

    Abstract: No abstract text available
    Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5338D/KSC5338DW O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF KSC5338D/KSC5338DW O-220 O-220

    NPN Transistor 10A 400V

    Abstract: 2N5663 300V transistor npn 2a LE17
    Text: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N5663 100mW/ O-205AA) NPN Transistor 10A 400V 2N5663 300V transistor npn 2a LE17

    2SC1050

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector


    Original     		PDF 2SC1050 2SC1050

    2sc1050

    Abstract: npn transistors 300V 0,5a
    Text: SavantIC Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


    Original     		PDF 2SC1050 2sc1050 npn transistors 300V 0,5a

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD


    Original     		PDF 2N5253 O-205AD)

    2N5253

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD


    Original     		PDF 2N5253 O-205AD) 2N5253

    2sc105

    Abstract: 2SC1050
    Text: Inchange Semiconductor Product Specification 2SC1050 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


    Original     		PDF 2SC1050 2sc105 2SC1050

    Untitled

    Abstract: No abstract text available
    Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5665N1 O-276AA)

    Untitled

    Abstract: No abstract text available
    Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5665N1 O-276AA)

    LE17

    Abstract: NPN Transistor 10A 400V 300V transistor npn .5a
    Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5665N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5665N1 O-276AA) LE17 NPN Transistor 10A 400V 300V transistor npn .5a

    NPN Transistor 1.0A 400V

    Abstract: LE17 SMD-0.5 NPN Transistor 10A 400V
    Text: NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO


    Original     		PDF 2N5667N1 O-276AA) NPN Transistor 1.0A 400V LE17 SMD-0.5 NPN Transistor 10A 400V

    voltage regulators 300v dc

    Abstract: LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w
    Text: 2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 0.89


    Original     		PDF 2N3439 2N3440 2N3439" 2N3439CECC 2N3439CSM4 2N3439CSM4-JQR-B 2N3439CSM4R 10/20m voltage regulators 300v dc LCC3 transistors 1A 300V TRANSISTOR NPN Transistor 450v 1A npn transistors 300V 0,5a transistor 5w

    transistor VCE 1000V

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
    Text: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:


    Original     		PDF NTE2333 NTE2333 130mA, 650mA 600mA, transistor VCE 1000V npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a

    LB-008

    Abstract: lc08a LB 125 transistor Triple Diffused
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    OCR Scan     		PDF KSC5338D/KSC5338DW O-220 LB-008 lc08a LB 125 transistor Triple Diffused

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time


    OCR Scan     		PDF KSC5338D/KSC5338DW O-220 T0-220 C35siÃ

    etd 41

    Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41
    Text: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		PDF BUF410/41 BUF41 OA/41 100KHz 10OKHz BUF410/410I BUF410A/410AI etd 41 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 NPN Transistor 10A 400V OA41

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    2N4863

    Abstract: SDT5501 SDT5556 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT 300V 0.5A NPN transistor
    Text: -Æittron PKOOdJXgTr ÄTÄ1L©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices, Inc. NPN EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 91 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


    OCR Scan     		PDF 203mm) 2N4863 SDT5501 SDT5556 PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT 300V 0.5A NPN transistor