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    300U Search Results

    300U Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    DA14683-00U2DB-P Renesas Electronics Corporation SmartBond™ DA14683 Bluetooth Low Energy 5.1 Development Kit Pro - WL-CSP53 Daughterboard Visit Renesas Electronics Corporation
    DRV8300UDPWR Texas Instruments 100-V max, simple three-phase gate driver with bootstrap diodes and enhanced UVLO protection 20-TSSOP -40 to 125 Visit Texas Instruments
    DRV8300UDRGER Texas Instruments 100-V max, simple three-phase gate driver with bootstrap diodes and enhanced UVLO protection 24-VQFN -40 to 125 Visit Texas Instruments
    DRV8300UDIPWR Texas Instruments 100-V max, simple three-phase gate driver with bootstrap diodes and enhanced UVLO protection 20-TSSOP -40 to 125 Visit Texas Instruments
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    300U Price and Stock

    Rochester Electronics LLC FAN54300UCX

    IC BATT CHG PWR SUP SUPPORT CIRC
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    DigiKey FAN54300UCX Bulk 81,000 460
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    Littelfuse Inc 30R300UPR

    PTC RESET FUSE 30V 3A RADIAL
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    DigiKey 30R300UPR Cut Tape 3,050 1
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    ComSIT USA 30R300UPR 2,000
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    Chip1Stop 30R300UPR 6,681
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    30R300UPR Cut Tape 1,995
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    30R300UPR 816
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    New Advantage Corporation 30R300UPR 4,000 1
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    Belden Inc 5300UG-008U500

    CABLE 2COND 18AWG GRAY
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    DigiKey 5300UG-008U500 2,000 500
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    Littelfuse Inc 30R300UU

    PTC RESET FUSE 30V 3A RADIAL
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    DigiKey 30R300UU Bulk 807 1
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    Newark 30R300UU Bulk 487 1
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    Bristol Electronics 30R300UU 83
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    New Advantage Corporation 30R300UU 1,000 1
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    igus Inc CF300-UL-1200-01-D

    TPE1C-4/0AWG HK UP WIRE 1KV FEET
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    DigiKey CF300-UL-1200-01-D 616 1
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    300U Datasheets (277)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    300U International Rectifier STANDARD RECOVERY DIODES Stud Version Original PDF
    300U010A International Rectifier Original PDF
    300U020A International Rectifier Original PDF
    300U030A International Rectifier Original PDF
    300U040A International Rectifier Original PDF
    300U060A International Rectifier Original PDF
    300U100A International Rectifier Standard Recovery Diode Original PDF
    300U100A International Rectifier STANDARD RECOVERY DIODE Original PDF
    300U100A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier, Silicon Standard Recovery, Alloy, 1000V, 300A, Pkg Style DO-9 Scan PDF
    300U100A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    300U100A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    300U100A Unknown Catalog Scans - Shortform Datasheet Scan PDF
    300U100AM International Rectifier 300A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier Scan PDF
    300U100AM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    300U100AMA International Rectifier 300A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier Scan PDF
    300U100AMA Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    300U10A International Rectifier Standard Recovery Diode Original PDF
    300U10A International Rectifier Standard Recovery Diode Original PDF
    300U10A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    300U10A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ...

    300U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 300U 120 C

    Abstract: No abstract text available
    Text: 300U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Alloy diode RoHS • Popular series for rough service COMPLIANT • Stud cathode and stud anode version • RoHS compliant • Designed and qualified for industrial level


    Original     		PDF DO-205AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DIODE 300U 120 C

    DIODE 300U 120 C

    Abstract: diode 300U 300U B-26 DO-205AB 8-24UNF-2A
    Text: Bulletin I2039 rev. C 03/03 300U R SERIES STANDARD RECOVERY DIODES Stud Version Features Alloy diode Popular series for rough service 300A Stud cathode and stud anode version Typical Applications Welders Power supplies Motor controls Battery chargers General industrial current rectification


    Original     		PDF I2039 DO-205AB DIODE 300U 120 C diode 300U 300U B-26 DO-205AB 8-24UNF-2A

    Untitled

    Abstract: No abstract text available
    Text: 300U R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Alloy diode • Popular series for rough service RoHS • Stud cathode and stud anode version COMPLIANT • Designed and qualified for industrial level


    Original     		PDF DO-205AB 685electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF MMBT2222AW OT-323 SC-70) MMBT2222AW 300us, 150mAdc, 15mAdc) 50mAdc) mAdc400

    crystal 12mhz

    Abstract: smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz
    Text: Quartz Crystal CSX3 Model 3.2X5 mm Ultra Miniature SMD Crystal Packaging: 12MHz to 45MHz ±10ppm to ±50ppm ±10ppm to ±100ppm ee Fr ad HS t -10°C to 70°C e L Ro plian -30°C to 85°C m Co 5.0pF Max 20uW Typical, 300uW Max ±3ppm Max 1st/yr see table 1


    Original     		PDF 12MHz 45MHz 10ppm 50ppm 100ppm 300uW CSX3-AB1-18-19 25ppm crystal 12mhz smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz

    Untitled

    Abstract: No abstract text available
    Text: NJM324C Low power quad operational amplifiers Features • Wide gain bandwidth:1.3MHz typ. • Input common-mode voltage range includes ground • Large voltage gain:100dB typ. • Very low supply current per amplifier:300uA typ. • Low input bias current: 20nA typ.


    Original     		PDF NJM324C 100dB 300uA NJM324CG NJM324C

    TGF4350-EPU

    Abstract: No abstract text available
    Text: Advance Product Information May 15, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x


    Original     		PDF 300um TGF4350-EPU 0007inch TGF4350-EPU

    Untitled

    Abstract: No abstract text available
    Text: LT1013MJGB SMD Linear ICs Dual General Purpose Op Amp statusû Military/High-RelY Input Bias Current Max. (A)30n Unity Gain BW (Hz) V(io) Max. (V)300u I(io) Max. (A)2.5n Com Mode Inp Range (VICR)13ñ Input Resistance Typ. (Ohms)400MÂ Temp Coef. of VIO2.0u


    Original     		PDF LT1013MJGB

    Untitled

    Abstract: No abstract text available
    Text: LT1013AIP Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 25n Unity Gain BW (Hz) V(io) Max. (V)300u I(io) Max. (A)1.5n Com Mode Inp Range (VICR)13ñ Input Resistance Typ. (Ohms)400MÂ Temp Coef. of VIO2.0u P(D) Max. (W)


    Original     		PDF LT1013AIP Code8-837 NumberLN00800837

    Untitled

    Abstract: No abstract text available
    Text: OP297FZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 750p Unity Gain BW (Hz)500k V(io) Max. (V)300u I(io) Max. (A)750p Com Mode Inp Range (VICR)14ñ Input Resistance Typ. (Ohms)30M Temp Coef. of VIO2.0u P(D) Max. (W)


    Original     		PDF OP297FZ Code8-1073 NumberLN00801073

    Untitled

    Abstract: No abstract text available
    Text: OP220EY Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 25n Unity Gain BW (Hz)150k V(io) Max. (V)300u I(io) Max. (A)2.0n Com Mode Inp Range (VICR)28 Input Resistance Typ. (Ohms) Temp Coef. of VIO1.0u P(D) Max. (W)500m


    Original     		PDF OP220EY Code8-837 NumberLN00800837

    Untitled

    Abstract: No abstract text available
    Text: 300UR30A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ


    Original     		PDF 300UR30A Current300 Voltage300 Current40m

    Untitled

    Abstract: No abstract text available
    Text: VN0106N9 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


    Original     		PDF VN0106N9 Junc-Case125

    Untitled

    Abstract: No abstract text available
    Text: TN0624N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A)400m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


    Original     		PDF TN0624N3 Junc-Case125

    Untitled

    Abstract: No abstract text available
    Text: 300UR120A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ


    Original     		PDF 300UR120A Current300 Current25m

    Untitled

    Abstract: No abstract text available
    Text: 2SK545-12 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V) I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)300u


    Original     		PDF 2SK545-12

    Untitled

    Abstract: No abstract text available
    Text: SK3098 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage82 @I(Z) (A) (Test Condition)300u Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.200Â Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-27


    Original     		PDF SK3098 Voltage82 pp/10k StyleDO-27

    Untitled

    Abstract: No abstract text available
    Text: 300UR80AM Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ


    Original     		PDF 300UR80AM Current300 Voltage800 StyleDO-205AB

    Untitled

    Abstract: No abstract text available
    Text: TLE2022BML Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 50n Unity Gain BW (Hz)2.8M V(io) Max. (V)300u I(io) Max. (A)3.0n Com Mode Inp Range (VICR)13.2ñ Input Resistance Typ. (Ohms) Temp Coef. of VIO2.0u P(D) Max. (W)650m


    Original     		PDF TLE2022BML Code8-837 NumberLN00800837

    Untitled

    Abstract: No abstract text available
    Text: OP271FZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 40n Unity Gain BW (Hz)5.0MÂ V(io) Max. (V)300u I(io) Max. (A)15n Com Mode Inp Range (VICR)12.5ñ Input Resistance Typ. (Ohms)0.4M Temp Coef. of VIO1u P(D) Max. (W)500m


    Original     		PDF OP271FZ Code8-837 NumberLN00800837 10nV/rt

    208H

    Abstract: 300uH
    Text: 1. Mechanical Dimensions: 2. S c h e m a t i c : -0 2 1 o- B 4 0 - 1 19.00 1-0 3 Max £ D 2 .5 0 ± 0 .5 0 3. Electrical Specifications: OCL: 4.3m H Min @1 OKHz 1.0V, Each Wdg Leakage L: 300uH Max @100KHz 0.1V, S hort 4 - 3 DCR: 0 .5 0 0 Ohms Max, Each Wdg


    OCR Scan     		PDF 300uH 100KHz 2000Vac 300Vrms MIL-STD-202G, UL94V-0 E151556 -t-125 208H

    TGF4350-EPU

    Abstract: No abstract text available
    Text: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration


    OCR Scan     		PDF 300um TGF4350-EPU 0007-inch TGF4350-EPU

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 12031/B International I I]Rectifier 70/300U R .D SERIES STANDARD RECOVERY DIODES Stud Version Features D iffu sed d io d e W id e c u rre n t ra n g e High v o lta g e ra tin g s up to 1 6 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tu d c a th o d e and stud a n o d e ve rs io n


    OCR Scan     		PDF 12031/B 70/300U 5S452

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x


    OCR Scan     		PDF 300um TGF4350-EPU 0007-inch