AMD 16L8
Abstract: application PAL 16l8 16L8 PLUS16L8 16R4 16l8 JEDEC fuse 16R4 programming specification 16R6 16R8 PLUS16R8
Text: Philips Semiconductors Programmable Logic Devices Product specification PAL devices 16L8, 16R8, 16R6, 16R4 PLUS16R8D/-7 SERIES FEATURES DESCRIPTION • Ultra high-speed The Philips Semiconductors PLUS16XX family consists of ultra high-speed 7.5ns and 10ns versions of Series 20 PAL devices.
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PLUS16R8D/-7
PLUS16XX
74MHz
PLUS16R8-7
PLUS16XX
PLUS16R8D
PLUS16R8
PLUS16R6
PLUS16R4
AMD 16L8
application PAL 16l8
16L8
PLUS16L8
16R4
16l8 JEDEC fuse
16R4 programming specification
16R6
16R8
PLUS16R8
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QP7C261-25LI
Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
Text: QP7C261 / QP7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed
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QP7C261
QP7C263
QP7C264
300-mil
600-mil
QP7C261)
QP7C261,
QP7C263,
QP7C264
8192-word
QP7C261-25LI
GDFP2-F24
5962-9080307MJA
CQCC1-N28
QP7C261-35QMB
5962-9080306MLA
QP7C263-25JC
QP7C261-25WMB
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Untitled
Abstract: No abstract text available
Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles
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TM4EP72BPB,
TM4EP72BJB,
72-BIT
TM4EP72CPB,
TM4EP72CJB
SMMS886-AUGUST
TM4EP72BxB
32M-byte,
168-pin,
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TMS44C256
Abstract: No abstract text available
Text: TMS44C256, TMS44C257 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES JUNE 1 9 8 6 - • 2 6 2 ,1 4 4 X 4 Organization • Single 5-V Supply 10% Tolerance (TO P V IEW ) L 1 ^ 2 0 3 V SS 19 ] D Q 4 DQ2C 2 18 ] D Q 3 w [ 3 d q i Performance Ranges: TM S 4 4 C 2 5 _-1 0
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TMS44C256,
TMS44C257
144-WORD
TMS44C256
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TMS44C256
Abstract: TMS44C256-10 TMS44C256-80 44C256
Text: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ‘jM G S l'M C D Q1 I u 1 DQ4 W ; 3 18 ' D Q 3 V SS DQ2 I 7 RAS ! 9 R E AD 13 j A 6 12 j A5 TIM E T IM E TIM E OR ta R ta (C ) 'a (C A ) W R IT E A3 [ 9 (tC A A ) CYCLE (M A X ) (M A X ) (M IN)
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TMS44C256
144-WORD
TMS44C256s
TMS44C256N
TMS44C256-10
TMS44C256-80
44C256
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CY7C263-35PC
Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)
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CY7C261
C263/CY7C264
7C261)
300-mil
600-mil
CY7C261,
CY7C263,
CY7C264
8192-word
byGY7C264
CY7C263-35PC
7C261
CY7C263
CY7C26345DMB
cerdip z PACKAGE
7C264
C261
f1b0
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ABT22V10-7A
Abstract: ABT22V10-7D ABT22V10-7N
Text: PROGRAMMABLE LOGIC PRODUCTS A B T 2 2 V 1 0 -7 c o m m e r c ia l A B T 2 2 V 1 0 A /B (MILITARY) Low noise, high drive, metastable immune, PLD Product specification (Commercial) Preliminary specification (Military) April 22, 1994 March 1994 Philips Semiconductors
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ABT22V10-7
ABT22V1OA/B
7110fl2b
ABT22V10
853-0173D
711Dfl2b
ABT22V10-7A
ABT22V10-7D
ABT22V10-7N
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR -CASIC/MEMORY} Ì7 Ô Ë | flìtlTES D074Ô31 □ 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1988 262,144 x 4 Organization JD PACKAGE TOP VIEW Performance Ranges: AC C ESS AC C ESS AC C ESS TIM E TIM E TIM E • e 4 5 ns *a(CA)
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144-WORD
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TMS417409A
Abstract: No abstract text available
Text: TMS416409A, TMS417409A TMS426409A, TMS427409A 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS893B - AUGUST 1996 - REVISED APRIL 1997 I I I I I This data sheet is applicable to a ll TMS41x409As and TMS42x409As symbolized by Revision “B ”, Revision “E ”, and subsequent
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TMS416409A,
TMS417409A
TMS426409A,
TMS427409A
4194304-WORD
SMKS893B
TMS41x409As
TMS42x409As
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7C188
Abstract: CY7C188
Text: CY7C188 32K x 9 Static RAM Features Functional Description • High speed — 15 ns • Automatic power-down when deselected • Low active power — 660 mW • Low standby power — 140 raW • CMOS for optimum speed/power • TTL-compatible inputs and outputs
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CY7C188
7C188
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CY7C185A-20LMB
Abstract: 7c186a CY7C186A-20DMB C105a CY7C185A CY7C186A-45DMB Y7C185 ZF78 CY7C185A-45LMB
Text: CYPRESS S E MI CONDUCTOR m 4GE D 250=1^2 DGOSGQÖ 7 H I C Y P 7-V£-23-/Z CY7C185A CY7C186A C Y PR FSS SEMICONDUCTOR F unctional D escrip tion Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power -
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vi-23-
CY7C185A
CY7C186A
CY7C186A
T-46-23-12
CY7C185A-20LMB
7c186a
CY7C186A-20DMB
C105a
CY7C186A-45DMB
Y7C185
ZF78
CY7C185A-45LMB
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CY7C1009
Abstract: 7C1009 A14C
Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance
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CY7C1009
550-mil
CY7C1009
7C1009
A14C
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7c251
Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed
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CY7C251
CY7C254
7C251)
300-mil
600-mil
CY7C254
384-word
Y7C251
7c251
a1s smd
smd code A1s
smd diode code A1s
65WMB
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A10C
Abstract: CY7C1006
Text: CYPRESS SEMICO NDU CTOR MbE » I aSflìbbé QD0ti7Q4 T • CY7C1006 ADVANCED INFORMATION. CYPRESS SEMICONDUCTOR 256K x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 15 ns • CMOS for optimum speed/power • Low active power — 800mW
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CY7C1006
800mW
CY7C1006
CY7CI006
300-mil-wideDIPs
7C1006â
A10C
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Untitled
Abstract: No abstract text available
Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat
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CY7C251
CY7C254
7C251)
300-m
600-mil
CY7C251
CY7C254
384-word
PROMs3802
CY7C254â
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Untitled
Abstract: No abstract text available
Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when
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CY7B194
CY7B195
CY7B196
CY7B195
CY7B196
CY7B194,
7B195,
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tfk 825
Abstract: No abstract text available
Text: 1M x 1 Static RAM Features Functional Description • High speed T he CY7C1007 is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable C E and th ree-state drivers.
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CY7C1007
CY7C1007
tfk 825
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Untitled
Abstract: No abstract text available
Text: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),
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CY7C18S
CY7C185
300-mil-wide
28-Lead
CY7C185â
28-Lead
300-Mil)
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Untitled
Abstract: No abstract text available
Text: 7S C Y P R E S S CY7C1006 p r e l im in a r y 256Kx 4 Static RAM Features Functional Description • High speed T he CY7C1006 is a high-perform ance CM OS static RA M organized as 262,144 words by 4 bits. Easy m em ory expansion is provided by an active LO W chip enable
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CY7C1006
256Kx
CY7C1006
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Untitled
Abstract: No abstract text available
Text: .~ Z £ PRELIMINARY . CYPRESS SEMICONDUCTOR 32K x 9 Static RAM CMOS static RAM organized as 32,768 words by 9 bits. Easy memory expansion is provided by an active-LOW chip enable CEi , an active-HIGHchip enable (CE 2 ), an active-LOW output enable (OE), and
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CY7C188
CY7C188
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Untitled
Abstract: No abstract text available
Text: CY7C1388 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • Single 3 3 ± 0.3V power supply • High speed — 20 ns • Low active power — 235 m W • Low standby power — 90 mW • 2.0V data retention — 100 iW • Ideal for low-voltage cache memory
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CY7C1388
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Untitled
Abstract: No abstract text available
Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES S M M S 686A -A U G U S T 1997-R E V IS E D FEBRUARY 1998 • Organization . . . 4194304 x 72 Bits • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles
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TM4EP72BPB,
TM4EP72BJB,
72-BIT
TM4EP72CPB,
TM4EP72CJB
1997-R
168-Pin
TM4EP72xxB-xx
16M-Bit
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Untitled
Abstract: No abstract text available
Text: fax id: 1058 CY7C107 CY7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.
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CY7C107
CY7C1007
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ATA 2388
Abstract: No abstract text available
Text: CY7B193 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 262,144 x 1 Static R/W RAM Features Functional Description • H igh speed T h e CY7B193 is a high-perform ance BiCM OS static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is provided by an active L O W chip enable
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CY7B193
CY7B193
ATA 2388
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