Untitled
Abstract: No abstract text available
Text: Microsemi h m m Chatsworth, C A m FR101GP THRU FR107GP Progress Powered by Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features 1 Amp Glass Passivated Rectifier 50 to 1000 Volts Low Cost Low Leakage Low Forward Voltage Drop
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FR101GP
FR107GP
FR101
FR102
FR103
FR104
FR105
FR106
FR107
FR101GP
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Untitled
Abstract: No abstract text available
Text: Micmsemi m m a PPC, he. Progress Powered by Technology • 7 51 6 C entral Industrial D rive R ivie ra B each, F lorida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • O ff-L ine Inverters S w itchin g R egulators M otor C ontrols
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300jiSec.
MSC1056
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VGS-30V
Abstract: No abstract text available
Text: MICRO ELECTRONICS CORP bGT17öö ÖQQ077T- 3 ITE D VM0610 VM2222 POWER MOSFETs • F AST SWITCHING TIMES • LOW RDS AT HIGH VOLTAGE • LOW DRIVE REQUIREMENTS • COMPATIBLE WITH INDUCTIVE LOADS ABSOLUTE MAXIMUM RATINGS ; Drain-Source Voltage Tj=25 to 150°C
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bGT17ö
QQ077T-
VM0610
VM2222
VM2222
VGS-30V
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Untitled
Abstract: No abstract text available
Text: • ■■ Micmsemi C hattw orth, CA m P rog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 2.5 Amp Silicon Rectifier 50 to 1000 Volts Low Cost Low Leakage Low Forward Voltage Drop
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RL251
RL252
RL253
RL254
RL255
RL256
RL257
RL251
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Untitled
Abstract: No abstract text available
Text: OM9007SC OM9008SC OM9009SC OM9010SC POWER MOSFETS & FAST RECOVERY RECTIFIER IN HERMETIC ISOLATED JEDEC M0-078 PACKAGE 1 0 0 V T h r u 500V, Up To 14 A m p , N - C h a n n e l M O S F E T A n d Fast R e c o v e r y P o w e r R ect ifi er FEATURES • • •
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OM9007SC
OM9008SC
OM9009SC
OM9010SC
M0-078
OM803
300visec.
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pch 1275
Abstract: No abstract text available
Text: OM9326SC DUAL MOSFETS IN 5 PIN HERMETIC SIP PACKAGE, N & P CHANNEL C o m p l e m e n t a r y 100V N-C hanne l An d P-Channel Power M OS FE Ts In 5 Pin H e r m e ti c SIP Package FEATURES • • • • • L o w R DS on Fast Switching Easy To Heat Sink Small Isolated Hermetic Package
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OM9326SC
MIL-S-19500,
300nsec,
OM20P10ST.
pch 1275
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Infrared Phototransistor
Abstract: TPOWER
Text: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These
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4N38A
4N38A
E51868
0110b
Infrared Phototransistor
TPOWER
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Untitled
Abstract: No abstract text available
Text: F r i LA7837, 7838 No.3313 Monolithic Linear 1C V ertical D eflection Output Circuit w ith TV and D isplay Drive Circuit Overview The LA7837.7838 are vertical deflection output ICs developed for use in high-grade TVs and displays. The interlace and crossover distortion responses, in p articu lar, have been greatly improved, allowing
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LA7837,
LA7837
001437b
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Untitled
Abstract: No abstract text available
Text: OMDIOO OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Am p . N-Channel MOS FE T In H e r m e ti c Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low R ds on Available Screened To MIL-S-19500, TX, TXV and S Levels
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OMD400
OMD200
OMD500
MIL-S-19500,
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Untitled
Abstract: No abstract text available
Text: Back to FETs NSG2563 ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced
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NSG2563
O-254Z
NSG2563
300jisec,
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Untitled
Abstract: No abstract text available
Text: 50 and 75ns ULTRA-FAST RECOVERY AXIAL LEAD RECTIFIER DIODES PRV to 600 V 50ns recovery Small size High temperature stability High surge capability Exceptionally low leakage Avalanche characteristics RUS1 PRV 200V 400V 500V 600V RUS 1 RUS120 RUS140 RUS150 RUS160
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RUS120
RUS220
RUS320
RUS420
RUS140
RUS240
RUS340
RUS440
RUS150
RUS250
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23p06
Abstract: No abstract text available
Text: O M 23P06ST O M 20P10ST O M 12P10ST O M 8P20ST O M 8P25ST O M 2P50ST Û M 23P 06S A O M 20P10SA O M 12P10SA O M 8P20SA O M 8P25SA OM 2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Ch annel MOSFET In A H e r m e tic Package
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23P06ST
20P10ST
12P10ST
8P20ST
8P25ST
2P50ST
20P10SA
12P10SA
8P20SA
8P25SA
23p06
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Untitled
Abstract: No abstract text available
Text: OM6009SM OM6011SM OM6010SM OM6Q12SM POW ER M O SFETS IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100 V Thru 500V, Up To 22 Am p. N-C hannel M OS FE T In H erm e ti c Su rfa ce M o u n t Package FEATURES • • • • • Isolated Hermetic Surface Mount Package
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OM6009SM
OM6011SM
OM6010SM
OM6Q12SM
MIL-S-19500,
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 37E 4302271 D 0027142 L> I HAS Optoelectronic Specifications_ T -V /-S 3 Photon Coupled Isolator4N38,4N38A MIN. 3 1« tTOPVIEWI 4 FEATURES: 2 6 ! s 1 - s y y u • Fast switching speeds , • High DC current transfer ratio • High isolation resistance
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Isolator4N38
4N38A
E51868
92CS-42662
92CS-429S1
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ZENER A16
Abstract: No abstract text available
Text: OM9001SS OM9003SS OM9002SS OM9004SS POWER MOSFET AND HIGH EFFICIENCY RECTIFIER IN A SINGLE HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Up To 30 Amp, N-Channel MOSFET With Back To Back Zener Gate Clamp Protection And Uncommitted Ultra-Fast Recovery 35 To 50 nsec Rectifier
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OM9001SS
OM9003SS
OM9002SS
OM9004SS
ZENER A16
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Untitled
Abstract: No abstract text available
Text: Micmsemi m m a PPC, he. • Progress Powered by Technology 7 51 6 C entral Industrial D rive R ivie ra B each, F lorida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 APPLICATIONS: • • • Deflection Circuits DC-DC Converters High Voltage Am plifiers
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10Ojih
-075A
MSC1058
300jiSec.
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Untitled
Abstract: No abstract text available
Text: MDE D ROHM CO LT» RHfl 7ÖEflT^ QOGbflLS □ R O H ÏÏI Page Specification Products Tentative 1. SCOPE f ot i Type TWO C H I P LIGHT EMITTING SIR-562SB5 This specification covers the detail require ments for two fold GaAs Infra-red Light Emitting Diodes.
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SIR-562SB5
210mW
---15uS
------150mA
300jisec
100mA
100mA
SIR-562SB
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F 540 NS
Abstract: NSG2563 20A p MOSFET 30V 20A power p MOSFET T4 PN diode xm46
Text: NSG2563 NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced
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NSG2563
O-254Z
NSG2563
300jisec,
XM46-1158
F 540 NS
20A p MOSFET
30V 20A power p MOSFET
T4 PN diode
xm46
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Untitled
Abstract: No abstract text available
Text: Micmsemi • f l f Chêttworth, CA M Prog ress Pow ered b y T echnology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 600 Volts Features • • • • • High Surge Capability
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DO-41
300Vical
20/100ns/cm
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Untitled
Abstract: No abstract text available
Text: OM6021SC OM6023SC OM6022SC OM6024SC POWER MOSFETS IN HERMETIC PACKAGE 100V Thru 500V, Up To 35 Am p. N-Channel Power M OSFE Ts In JE DEC TO -259AA Package FEATURES • • • Isolated Side-Tab Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power
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OM6021SC
OM6023SC
OM6022SC
OM6024SC
-259AA
MIL-S-19500,
O-259AA
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