MARKING a47
Abstract: A47 SOT23-5
Text: OPA 3 OPA 347 47 OPA347 OPA2347 OPA4347 OPA 347 OPA 434 7 OPA 234 7 www.ti.com microPower, Rail-to-Rail OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● LOW IQ: 20µA ● microSIZE PACKAGES: SOT23-5, SOT23-8, and TSSOP-14 ● HIGH SPEED/POWER RATIO WITH
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OPA347
OPA2347
OPA4347
OT23-5,
OT23-8,
TSSOP-14
350kHz
OPA347
OT23-5
MARKING a47
A47 SOT23-5
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zth 347
Abstract: BUZ347
Text: BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 347 50 V 45 A 0.03 Ω TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol
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O-218
C67078-S3115-A2
zth 347
BUZ347
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6MBP50RTA060
Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
Text: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with
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CIPS2002,
6MBP50RTA060
6mbp160rta060
6MBP80RTA060
fuji ipm
6MBP100RTA060
7MBP50RTA060
6mbp20RTA060
7MBP160RTA060
fuji 6mbp
7MBP80RTA060
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J645
Abstract: J626 transistor J626 ultrarf UPB2010B J626 Transistor
Text: URFDB Sec 03_2010B 11/3/99 10:31 AM Page 3-42 UPB2010B 10W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM,
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2010B
UPB2010B
30dBc
130mA
100oC
175oC
J645
J626
transistor J626
ultrarf
UPB2010B
J626 Transistor
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zdt705
Abstract: T705 DSA003726
Text: SM-8 DUAL PNP MEDIUM POWER DARLINGTON TRANSISTORS ZDT705 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL T705 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage
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ZDT705
OT223)
-120V
-120V,
zdt705
T705
DSA003726
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DAIN mpx capacitor
Abstract: dv550140s SNX-R1540 VTM160-4 NP975864 carli mpx PFS714EG Keystone CL-60 carli ELECTRONICS DAIN MPX
Text: Title Reference Design Report for a High Performance 347 W PFC Stage Using HiperPFS PFS714EG Specification 90 VAC – 264 VAC Input; 380 VDC Output Application PFC Front End Stage Author Applications Engineering Department Document Number RDR-236 Date November 18, 2010
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PFS714EG
RDR-236
EN61000
DAIN mpx capacitor
dv550140s
SNX-R1540
VTM160-4
NP975864
carli mpx
PFS714EG
Keystone CL-60
carli ELECTRONICS
DAIN MPX
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8ch pnp DARLINGTON TRANSISTOR ARRAY
Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Text: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array
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TD62S×
TD62M×
TD62C×
TB62/TD/ULN/ULQ
D62598AP
TD62601P
TD62602P
TD62603P
TD62604P
TD62703P
8ch pnp DARLINGTON TRANSISTOR ARRAY
pnp DARLINGTON TRANSISTOR ARRAY
ULN* PNP transistor array
PNP DARLINGTON SINK DRIVER
pnp darlington array
m54586p
pnp darlington array ULN
uln2803 to drive 7 segment display
ULS2003H
nec pa2003c
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Untitled
Abstract: No abstract text available
Text: Microwave Transistors CONTENTS Page INDEX 3 SELECTION GUIDE 7 MARKING CODES 11 GENERAL 15 DEVICE DATA in alphanumeric sequence 29 PACKAGE OUTLINES 347 DATA HANDBOOK SYSTEM 365
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DFC-3
Abstract: No abstract text available
Text: "TE UNITRODE CORP 9347963 UNITRODE CORP 1 1^^347^3 92D POWER MOSFET TRANSISTORS 10833 D UFNF130 UFNF131 UFNF132 UFNF133 100 Volt, 0.18 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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UFNF130
UFNF131
UFNF132
UFNF133
UFNF131
UFNF130
DFC-3
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 =12 »71^347^1=3 U N I T R O D E CORP 92D 10Q45 □010&45 D POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel FEATURES • Fast Switching • Low drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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10Q45
UFNF222
UFNF223
UFNF220
UFNF221
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP ÎË 9347963 UNITRODE dF CORP J ^347^1=3 GDlGSlb 5 |~~ 92D 10516 D T - M -/ 3 POWER MOSFET TRANSISTORS , JTX, JTXV 400 Volt, 0.3 Ohm N-Channel FEA TU R ES • Fa st S w itching • Low Drive C urren t • E a se of Parallelin g • No S eco n d B reakd ow n
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fn720
Abstract: No abstract text available
Text: UNITRODE CORP »£§^347^^3 9347963 U N IT R OD E C ORP 92D 10750 0D1Q7S0 r v POWER MOSFET TRANSISTORS UFN720 UFN721 UFN722 UFN723 400 Volt, 1.8 Ohm N-Channel F EATU RES • C om pact Plastic Package • Fast S w itching • Low Drive Current • Ease of Paralleling
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UFN720
UFN721
UFN722
UFN723
fn720
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2SD1480
Abstract: 2SD1517
Text: Power Transistors 1 ^ 3 2 0 5 4 0 0 1 1 15 7 347 « P N C E PANASONIC INDL/ELEK SEMI 2SD1517 2SD1517 fc.'iE D Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Amplifier, Pow er Switching • • • • • U n it ! mm 4.4m ax. 10.2m ax. • Features
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2SD1517
2SD1480)
2SD1480
2SD1517
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SD 347
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power MOS Transistors BUZ 15 BUZ 347 = 50 V ^DS = 45 A b 0.03 Q ^DS on • N channel • E nhancem ent mode • A valanche-proof • Packages: T O -2 04 A E (TO-3), TO -2 18 A A (T O P -3)’ ) Type Ordering code BUZ 15 C 6 70 78-A 100 1 -A2
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VL86C010
Abstract: VL86C110 27e transistor VL86C11010QC 13OO3 LPN12
Text: i L S I TECHNOLOGY INC S7E D • i3a&347 QQQblSb Ö ■ VLSI T e c h n o l o g y , in c . ' V 9 2 -3 3 - 2 1 VL86C110 RISC MEMORY CONTROLLER MEMC FEA TU RES DESCRIPTION • Drives up to 32 standard dynamic RAMs giving 4 Mbytes of real memory with 1-Mbit devices
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32-Mbyte
160-PIN
VL86C010
VL86C110
27e transistor
VL86C11010QC
13OO3
LPN12
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q404 transistor
Abstract: D012S Q4-04 transistor 2A 6v
Text: MICROSENI CORP/ UATERTOIilN 5QE » ^347^3 D012S05 U2T301 U2T305 POWER DARLINGTONS ITT « U N I T Ü2T40Ï U2T405 5 Amp, 150V, Planar NPN / FEATURES • High Current Gain: 1000 min. @ lc = 2A • Low Saturation Voltage: as low as 1.5V max. @ lc = 2A • High Voltage: up to 150V min. VCER
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D012S05
U2T301
U2T305
U2T405
U2T40S
U2T401
926-Q404
q404 transistor
D012S
Q4-04
transistor 2A 6v
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Untitled
Abstract: No abstract text available
Text: M I C R O S E H I CO RP / IdATERTOüJN 5ÜE D • POWER TRANSISTORS ^347^3 JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN D G I S M Ö R 127 M U N I T JANTX, JANTX, JANTX, JANTX, & & & & JANTXV JANTXV JANTXV JANTXV 2N5660 2N5661 2N5662 2N5663 FEATURES D E S C R IP T I O N
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2N5660
2N5661
2N5662
2N5663
MIL-S-19500/454
2N5660,
2N5661
25iTlA
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U2T205
Abstract: No abstract text available
Text: MICROSEMI CORP/ l i lATERTOUN SGE ] ^347^3 DD1BSD3 . POWER DÂR LI NGt ON S 327 M UNIT U2T10l U2T105 U2T201 U2T205 10 Amp, 150V, Planar NPN O FE A TU R E S • • • • • DESCRIPTION High Current Gain: up to 2QOO min @ ic = 5A Low Saturation Voltage: as low as 1.5V max @ lc = 5A
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U2T10l
U2T105
U2T201
U2T205
U2T101
U2T101&
U2T201&
U2T205
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UNITRODE U-66
Abstract: U13T1 U13T2
Text: N I C R O S E M I C O R P / UATERTOU1N p y jg SOE » • ^347^3 Planar, TO-18 Hermetic FEATU RES • V oltage Ratings: to 100V • M axim u m Peak Current: 150nA • V a lley C urrent: as low as 2 5 11A • Low Forward Voltage Drop • Nano-Am p Leakage • H e rm e tic a lly S ealed TO-18 M eta l Can
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U13T1-U13T2
150nA
100Vr
UNITRODE U-66
U13T1
U13T2
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SD 347 transistor
Abstract: BUZ 1025 SD 347
Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 Vbs 50 V fa ^DSfon Package Ordering Code 45 A 0.03 f l TO-218AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Continuous drain current
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O-218AA
C67078-S3115-A2
O-218AA
SD 347 transistor
BUZ 1025
SD 347
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S31
15-A2
fl23SbOS
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SD 347 transistor
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 347 • N channel • Enhancement mode • Avalanche-rated Type BUZ 347 50V A ^DS on) Package 1) O rdering Code 45A 0.03 Q TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 28 "C
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O-218
C67078-S3115-A2
SD 347 transistor
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transistor BD 263
Abstract: No abstract text available
Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2
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O-220
C67078-A1307-A4
235b05
fl235bGS
transistor BD 263
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IR4060
Abstract: BUZ50 C67078-A1307-A4
Text: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR
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O-220
C67078-A1307-A4
S35b05
fl235bQS
IR4060
BUZ50
C67078-A1307-A4
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