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    3 PIN TRANSISTOR 10 AMP Search Results

    3 PIN TRANSISTOR 10 AMP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    3 PIN TRANSISTOR 10 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1B 2SC3356 s2p 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356

    2SC3357-T1-A

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz


    Original     		PDF NE85634 2SC3357 NE85634-A PU10211EJ01V0DS 2SC3357-T1-A

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    2SC3356 s2p

    Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF 2SC3356 2SC3356-T1 2SC3356 s2p 2SC3356 Application Note 2SC3356 nec marking 2sc3356

    nec 2501

    Abstract: 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz


    Original     		PDF 2SC3357 2SC3357-T1 nec 2501 2SC3357 2SC3357-T1 marking 2sc3357 ic nec 2501 nec RF package SOT89 sot89 TRANSISTOR MARKING AV 2sc3357t1

    2SC3356-T1B-A

    Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
    Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz


    Original     		PDF 2SC3356 R09DS0021EJ0300 2SC3356 2SC3356-T1B 2SC3356-A 2SC3356-T1B-A 2SC3356 s2p

    2SC5015

    Abstract: 2SC5015-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation


    Original     		PDF 2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1

    388 transistor

    Abstract: transistor 388 transistor 388
    Text: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets Series 388, 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Series 917 uses MM #1705 receptacles


    Original     		PDF O-100 O-100 917-XX-103-41-005000 917-XX-104-41-005000 917-XX-108-41-005000 917-XX-208-41-005000 917-XX-210-41-005000 388-XX-102-11-740800 388-XX-102-11-740799 EIA-481: 388 transistor transistor 388 transistor 388

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS Surface Mount & Through-Hole Mount Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. 0,38-0,64 0,25 0,46 2,18 2,79 3,68 0,51 DIA. 4,19 3,18 • Two 8 pin versions feature pin centers on 5,08 or 5,84 circle.


    Original     		PDF 2002/95/EC 917-43-XXX-41-001799 330mm

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS SERIES 917 • SURFACE AND THROUGH-HOLE MOUNT • Series 917 TO package sockets are available 0,38-0,64 0,25 * 0,46 in 3, 4, 8 and 10 positions 2,18 2,79 3,68 0,51 DIA. • Two 8 pin versions feature pin centers on 5,08 4,19 • 3,18 •


    Original     		PDF ope-001000 917-XX-208-41-001000 917-XX-210-41-001000 917-XX-XXX-41-001799 330mm 2011/65/EU

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS Surface Mount & Thru-Hole Mount Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. 0,38-0,64 0,25 0,46 2,18 2,79 3,68 0,51 DIA. 4,19 3,18 • Two 8 pin versions feature pin centers on 5,08 or 5,84 circle.


    Original     		PDF Di917-XX-208-41-005000 917-XX-210-41-005000 O-100 O-100

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS Surface Mount & Through-Hole Mount 0,38-0,64 Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. 0,25 0,46 2,18 2,79 3,68 0,51 DIA. 4,19 3,18 • Two 8 pin versions feature pin centers on 5,08 or 5,84 circle.


    Original     		PDF 2002/95/EC O-100 O-100

    transistor sockets

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS Surface Mount & Thru-Hole Mount Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. 0,38-0,64 0,25 0,46 2,18 2,79 3,68 0,51 DIA. 4,19 3,18 • Two 8 pin versions feature pin centers on 5,08 or 5,84 circle.


    Original     		PDF O-100 917-XX-103-41-001000 917-XX-104-41-001000 917-XX-108-41-001000 917-XX-208-41-001000 917-XX-210-41-001000 O-100 transistor sockets

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS SERIES 917 • SURFACE AND THROUGH-HOLE MOUNT • Series 917 TO package sockets are available .018-.025 .010 .018 in 3, 4, 8 and 10 positions .086 • Two 8 pin versions feature pin centers on .200” .110 .145 .165 • .020 DIA. .125 •


    Original     		PDF 917-XX-210-41-001000 917-XX-XXX-41-001799 2011/65/EU

    transistor sockets

    Abstract: au-123 B200
    Text: TRANSISTOR SOCKETS Surface Mount & Through-Hole Mount .018-.025 .010 Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. .018 .086 .110 .145 .020 DIA. .165 .125 • Two 8 pin versions feature pin centers on .200” or .230” circle.


    Original     		PDF 2002/95/EC Through-Ho43-108-41-001000 917-43-XXX-41-001799 transistor sockets au-123 B200

    B200

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS Surface Mount & Thru-Hole Mount Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Series 917_005 use MM #1705 pins, see page 137 for details. Receptacles


    Original     		PDF O-100 O-100 B200

    B200

    Abstract: No abstract text available
    Text: TRANSISTOR SOCKETS Surface Mount & Through-Hole Mount Series 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Series 917_005 use MM #1802 pins, see page 140 for details. Receptacles


    Original     		PDF 2002/95/EC O-100 O-100 B200

    transistor 684

    Abstract: PJB772CK PJB772CP PJB772SCT
    Text: PJB772/PJB772S PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING y Complement to PJD882 y PW 10µs,Duty Cycle 50% y Pulse Test PW 350µs,Duty Cycle 2% TO-126 TO-92 Pin : 1. Emitter 2. Collector 3. Base ABSOLUTE MAXIMUM RATINGS Tc = 25℃


    Original     		PDF PJB772/PJB772S PJD882 O-126 O-252 transistor 684 PJB772CK PJB772CP PJB772SCT

    HA1127P

    Abstract: HA1127 HA1127FP IC503
    Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2 6 9 B4 E2 7 8 C3 (Top view) Note: Use pin 13 as the lowest potential for this IC. 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HA1127, HA1127P, HA1127FP HA1127 HA1127P HA1127 HA1127FP IC503

    Hitachi DSA002715

    Abstract: No abstract text available
    Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2


    Original     		PDF HA1127, HA1127P, HA1127FP HA1127 HA1127P HA1127FP DP-14 FP-14DA Hitachi DSA002715

    D76FI3T

    Abstract: J416
    Text: D76FI3T NPN POWER TRANSISTOR ARRAY 60 VOLTS 3 AMP, 4.0 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 4 in 1 • Epoxy single-inline package (10 pin)


    OCR Scan     		PDF D76FI3T 20fis J416

    CQ 637

    Abstract: D76A3D DARLINGTON 3A 100V npn array
    Text: D76A3D NPN POWER DARLINGTON TRANSISTOR ARRAY 100 VOLTS 3 AMP, 4.0 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 4 in 1 • Epoxy single-inline package (10 pin)


    OCR Scan     		PDF D76A3D SIP-10 D76A3D CQ 637 DARLINGTON 3A 100V npn array

    CSB772

    Abstract: CSD882
    Text: CSB772 PNP PLASTIC POWER TRANSISTOR Complementary CSD882 Audio frequency Power Amplifier and Low Speed Switching PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7 .4 7 .8 10 .8 B 10 .5 C 2.4 2 .7 D 0 .7 0 .9 2 .2 5 TYP. E F 0 .4 9 | 0 .7 5


    OCR Scan     		PDF CSB772 CSB772 CSD882 CSD882

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY ADVANCE INFORMATION DS3638 • 2.0 Z N 4 1 4 Z & Z N 4 1 6 E AM RADIO RECEIVERS The ZN414Z is a 10 transistor tuned radio frequency TRF circuit packaged in a 3-pin TO-92 plastic package for simplicity and space economy. The circuit provides a complete R.F. amplifier, detector and


    OCR Scan     		PDF DS3638 ZN414Z ZN416E ZN414Z -30dB 37bfl522