IEC61058-1
Abstract: vde-0630 SS-01 SS-01-E SS-01-F SS-01GL SS-01GL13 SS-01GL13-E SS-01GL13-F SS-01GL-E
Text: Subminiature Basic Switch SS Economical, Subminiature Basic Switch Offers Long Life 30 x 106 Operations Incorporating simple and stable two split springs which ensures a long service life (30,000,000 operations). A variety of models with low operating force to high
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EN61058-1.
IEC61058-1
B032-E1-11A
vde-0630
SS-01
SS-01-E
SS-01-F
SS-01GL
SS-01GL13
SS-01GL13-E
SS-01GL13-F
SS-01GL-E
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CCF02
Abstract: PSF20
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . METAL FILM RESISTORS Resistive Products Resistors - Wide Resistance Range An Overview of Vishay Metal Film Resistors Key Benefits • • • • • • A wide range of power ratings 0.05 W to 10 W A wide resistance range (0.1 Ω to 50 MΩ)
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MIL-PRF-39017,
MIL-PRF-55182,
MIL-PRF-22684,
MIL-R-10509)
VMN-SG2030-1302
CCF02
PSF20
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SPRU014
Abstract: TMS320
Text: TMS320C2x/C2xx/C5x Optimizing C Compiler User’s Guide Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest
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TMS320C2x/C2xx/C5x
Index-13
SPRU014
TMS320
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AMBA ahb bus protocol
Abstract: Diode smd f6 UT699 AMBA APB bus protocol leon3 SMD code V12 smd w20 smd transistor w18 I-293 smd transistor 805 239
Text: Standard Products UT699 32-bit Fault-Tolerant SPARCTM V8/LEON 3FT Processor Data Sheet July 23, 2009 INTRODUCTION The UT699 is a pipelined monolithic, high-performance, faulttolerant SPARCTM V8/LEON 3FT Processor. The UT699 provides a 32-bit master/target PCI interface, including a 16 bit
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UT699
32-bit
UT699
66MHz
AMBA ahb bus protocol
Diode smd f6
AMBA APB bus protocol
leon3
SMD code V12
smd w20
smd transistor w18
I-293
smd transistor 805 239
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FB471
Abstract: MARKING 330D 390D 470D C0805C103K5RAC C1210 C1812 C1825 C2220 EIA481-1
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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EIA481-1.
IEC60286-6
EIA-198
FB471
MARKING 330D
390D
470D
C0805C103K5RAC
C1210
C1812
C1825
C2220
EIA481-1
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mb86904
Abstract: STP1012PGA STP1012PGA-85 microsparc RISC processor STP2001 SPARC v8 architecture BLOCK DIAGRAM MB8690 microsparc SPARC 7 sparc v8
Text: STP1012 July 1997 microSPARC -II DATA SHEET SPARC v8 32-Bit Microprocessor With DRAM Interface DESCRIPTION The microSPARC-II 32-bit microprocessor is a highly integrated, high-performance microprocessor. Implementing the SPARC Architecture v8 specification, it is ideally suited for low-cost uniprocessor applications.
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STP1012
32-Bit
STP1012PGA-70A
STP1012PGA-85
STP1012PGA-110
mb86904
STP1012PGA
STP1012PGA-85
microsparc RISC processor
STP2001
SPARC v8 architecture BLOCK DIAGRAM
MB8690
microsparc
SPARC 7
sparc v8
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1500 C FK 84 EH
Abstract: C0402 C0805 C0805C103K5RAC C1206 C1210 C1812 C1825 EIA481-1 IEC60286-6
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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EIA481-1.
IEC60286-6
EIA-198
1500 C FK 84 EH
C0402
C0805
C0805C103K5RAC
C1206
C1210
C1812
C1825
EIA481-1
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Untitled
Abstract: No abstract text available
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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EIA481-1.
IEC60286-6
EIA-198
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Untitled
Abstract: No abstract text available
Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and
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EIA481-1.
IEC60286-6
EIA-198
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PTC SCK 055
Abstract: PTC SCK 052 30116 4116 2N M35061-002SP PAL 007 PAL 007 B PAL 007 c PAL 007 E M35061-XXXFP
Text: MITSUBISHI MICROCOMPUTERS M35061-XXXSP/FP SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS DESCRIPTION M35061-XXXSP/FP is CATV screen display control IC which can display 40 horizontal ✕ 17 (vertical). It has built-in SYRAM which can be used with character ROM.
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M35061-XXXSP/FP
M35061-XXXSP/FP
M35061-XXXSP
32-pin
M35061-XXXFP
M35061-002SP/FP
M35061-XXXSP/FP,
PTC SCK 055
PTC SCK 052
30116
4116 2N
M35061-002SP
PAL 007
PAL 007 B
PAL 007 c
PAL 007 E
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PTC SCK 052
Abstract: PTC SCK 055 capacitor 1c8 30D16 ym 238 2003 M35061-XXXFP M35061-XXXSP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M35061-XXXSP/FP
M35061-002SP/FP
PTC SCK 052
PTC SCK 055
capacitor 1c8
30D16
ym 238 2003
M35061-XXXFP
M35061-XXXSP
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Ha13535
Abstract: HA13535FP HA13534FP ha13534 535FP
Text: HA13534FP, HA13535FP Three Phase Brushless Motor Driver IC Description Features The HA13534FP, 535FP are three-phase brushless DC motor driver IC with digital speed control. It was developed for use in the scanner o f a 24-V laser beam printer application.
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HA13534FP,
HA13535FP
535FP
HA13534FP
HA13535FP
535FP
Ha13535
ha13534
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TA1243CF
Abstract: No abstract text available
Text: TOSHIBA TA1243CF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 1 243CF RF MODULATOR FOR VCR The TA1243CF is a PLL RF modulator for the UHF frequency range. The multi system can easily make the lineup development. FEATURES • Phase locked loop frequency synthesizer for RF carrier and
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TA1243CF
243CF
TA1243CF
SSOP24-P-300-1
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TA1243CFN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 2 4 3 SILICON MONOLITHIC C F N RF MODULATOR FOR VCR The TA1243CFN is a PLL RF modulator for the UHF frequency range. The multi system can easily make the lineup development. FEATURES •
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TA1243CFN
TA1243CFN
SSOP24-P-300-0
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Untitled
Abstract: No abstract text available
Text: QL12X16B Wildcat 2000 Very-High-Speed 2K 6K Gate CMOS FPGA R ev B P High Usable Density - A 12 -by-16 array o f 192 logic cells provides 6,000 total available gates, w ith 2000 typically usable "gate array" gates in 68pin and 84-pin PLCC, 84-pin CPGA , 100-pin CQFP, 100-pin VQFP, and 100pin TQ FP packages.
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QL12X16B
-by-16
68pin
84-pin
100-pin
100pin
16-bit
M/883C
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA1297AFN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A SILICON MONOLITHIC 1 2 9 7 A F N RF M ODULATOR FOR VCR The TA1297AFN is a PLL RF modulator for the UHF frequency range. The multi system can easily make the lineup development. FEATURES • Phase locked loop frequency synthesizer for RF carrier and
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TA1297AFN
TA1297AFN
SSOP24-P-300-0
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M5222L
Abstract: transistor 222L hy 214-a M5222P
Text: MITSUBISHI SOUND PROCESSOR ICs M5222L,P,FP DUAL VCA FOR LOW VOLTAGE ELECTRONIC VOLUME CONTROL DESCRIPTION The M5222 is a dual VCA designed as an electronic volume control capable of operating a wide supply voltage range between 1.8V~20V. in The IC is an optimum device for electronic equipment requiring low voltage operation, such
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M5222L
M5222
transistor 222L
hy 214-a
M5222P
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diode 14512 H
Abstract: buz23 IC 14511
Text: aaD D • as35bQ5 88D qgihsio 14510 D a hsieg 1 ~ ' 3 * ? '/ / BUZ 23 SIEMENS AKTIENGESELLSCHAF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case K>8 h ^OS on = 100 V - 10 A
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as35bQ5
C67078-A1002-A2
fl235b05
diode 14512 H
buz23
IC 14511
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BFG96
Abstract: BFG32 MSB037 3H2 philips MBB352
Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in
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BFG32
OT103
BFG96.
D04SD3S
MSB037
OT103.
BFG96
BFG32
3H2 philips
MBB352
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Untitled
Abstract: No abstract text available
Text: That mLHM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar TVansistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz
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AT-41400
AT-41400
Rn/50
44475A4
0017b23
250jim
4447S
0017b24
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Untitled
Abstract: No abstract text available
Text: STP1012 S un M ic r o e l e c t r o n ic s J u ly 1997 microSPARC -ll DATA SHEET SPARC v8 32-Bit Microprocessor With DRAM Interface D e s c r ip t io n The microSPARC-II 32-bit m icroprocessor is a highly integrated, high-perform ance microprocessor. Im ple
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STP1012
32-Bit
1012P
1012PG
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63B23
Abstract: No abstract text available
Text: CXP823P24 SONY« CM OS 8-bit Single-chip Microcomputer Description The CXP823P24 is a highly, integrated CMOS 8-bit single-chip microcomputer which is mainly composed of an 8-bit CPU, ROM, RAM and I/O ports. This microcomputer features many other high-performance
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CXP823P24
CXP823P24
CXP82324
S15/PF7)
GD16117
63B23
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vij smd diode
Abstract: No abstract text available
Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1476 R E P E T IT IV E A V ALAN CHE A N D dv/dt R A TED IRHN2C50SE IRHN7C50SE HEXFET-TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D 600 Volt, 0.60ft, (SEE) RAD HARD HEXFET
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IRHN2C50SE
IRHN7C50SE
vij smd diode
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OFW 361-D
Abstract: 50/Siemens OFW 361 OFW 364
Text: MP7683 CMOS 8-Bit High Speed Analog-to-Digital Converter v æ t jw a FEATURES APPLICATIONS • • • • • • • • • • 3 MHz Sampling Rate Non-Linearity +1/4 LSB typ with S/H Low Power CMOS - 100mW (typ) Requires NO SAMPLE AND HOLD for signals
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MP7683
100mW
MP7683
fu125
3M22blfl
000b7Ã
3422blÃ
OFW 361-D
50/Siemens OFW 361
OFW 364
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