MSM5116180-70
Abstract: MSM5116180-80
Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.
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MSM5116180_
576-Word
18-Bit
MSM5116180
cycles/64ms
MSM5116180-70
MSM5116180-80
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headland 386
Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Text: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LCB300K
DB04-000049-00,
D-102
I40lg
headland 386
transistor zo 607 MA 7S
b2211
full subtractor using ic 74138
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Untitled
Abstract: No abstract text available
Text: That mLHM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar TVansistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz
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AT-41400
AT-41400
Rn/50
44475A4
0017b23
250jim
4447S
0017b24
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DD1752
Abstract: 5BL41 adr9 ks09 8051 128-PIN
Text: DS80CH10/DS82CH10/DS80CL10/DS82CL10 PRELIM INARY DS80CH10/DS82CH10 DS80CL10/DS82CL10 DALLAS Green Energy Manager s e m ic o n d u c to r PRODUCT SPECIFICATION V2.2 PRELIMINARY Copyright 1995 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding
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DS80CH10/DS82CH10/DS80CL10/DS82CL10
DS80CH10/DS82CH10
DS80CL10/DS82CL10
2L1413D
DG17552
128-PIN
56-G4011-000
0017bbl
DS80CH10-E00
DD1752
5BL41
adr9
ks09
8051 128-PIN
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