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    philips 8051 microcontroller bootloader isp data

    Abstract: No abstract text available
    Text: CRD89C512RD Technologies Inc. Datasheet Rev 1.0 CRD89C512RD 8-Bit Microcontroller with 2x64KB ISP Flash, 1KB of SRAM, PWMs Product List Feature Set CRD89C512RD-40 5V, 40MHz 128KB ISP flash MCU • • • Description • • • • • • • • • •


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    CRD89C512RD 2x64KB CRD89C512RD-40 40MHz 128KB CRD89C512RD 20/as philips 8051 microcontroller bootloader isp data PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L21665V 2x64Kx16 SRAM FEATURES DSP Memory Solution The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.


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    EDI8L21665V 2x64Kx16 EDI8L21665VxxBC 64Kx16 TMS320C5x TMS320C5x EDI8L21665V10BC PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear and Sequential Burst Support via MODE pin • Clock Controlled Registered Bank Enables E1\, E2\ •


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    EDI2CG27264V EDI2CG27264VxxD2 2CG27264V EDI2CG27264V85D1* EDI2CG27264V9D1* EDI2CG27264V10D1 EDI2CG27264V12D1 2x64Kx72 PDF

    A15A

    Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
    Text: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access


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    EDI8L21664V 2x64Kx16 TMS320C54x EDI8L21664VxxBC 64Kx16 DQ0-15) EDI8L21664V10BC A15A A15B EDI8L21664V MO-151 9704 64k x 16 SRAM PDF

    AA01

    Abstract: aa11
    Text: EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Sequential Burst MODE • Clock Controlled Registered Bank Enables E1\, E2 • Clock Controlled Byte Write Mode Enable (BWE\)


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    EDI2AG27265V EDI2AG27265VxxD1 y1999 EDI2AG27265V85D1* EDI2AG27265V9D1* EDI2AG27265V10D1 EDI2AG27265V12D1 2x64Kx72 AA01 aa11 PDF

    LH Research

    Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM ADVANCED Advanced 2x64Kx72, 3.3V Sync/Sync Burst Flow-Through Module Features • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear Burst MODE • Clock Controlled Registered Bank


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    EDI2AG27264V 2x64Kx72, 2x64Kx72 EDI2AG27264VxxD1 Module64Kx72 2x64Kx72 01581USA EDI2AG27264V LH Research GW CSSRM1.PC-MFNQ-5C7E-1-700-R18 PDF

    A15B

    Abstract: A15A EDI8L21664V MO-151
    Text: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.


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    EDI8L21664V TMS320C54x EDI8L21664VxxBC 2x64Kx16 64Kx16 TMS320C54x EDI8L21664V10BC A15B A15A EDI8L21664V MO-151 PDF

    diode a15a

    Abstract: A15A A15B TMS320C5x dsp block diagram MO-151 a014g
    Text: EDI8L21665V 2x64Kx16 SRAM, DSP Memory Solution FEATURES DESCRIPTION • Access Times of 10, 12 and 15ns The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.


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    EDI8L21665V 2x64Kx16 EDI8L21665VxxBC 64Kx16 TMS320C5x TMS320C5x MO-151 TMS320C54X. diode a15a A15A A15B TMS320C5x dsp block diagram MO-151 a014g PDF

    A15A

    Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
    Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


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    EDI8L21664V 2x64Kx16SRAM TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC A15A A15B EDI8L21664V MO-151 9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG41864V 576Kilobyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 2x64Kx18, 3 .3 V Module Features Synchronous Flow-Through • 4x64K x18 Synchronous • Flow-Through A rchitecture • C lock Controlled Registered Bank Enables E1\, nized as 4x64Kx18.


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    EDI2KG41864V 576Kilobyte 2x64Kx18, 4x64K 4x64Kx18. 472256VxxD PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2AG27265V 1Megabyte Sync/Sync Burst, Sm all Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64kx72 Synchronous, Synchronous Burst The EDI2AG27265VxxD1 is a Synchronous/Synchro­ nous Burst SRAM, 72 position 30 DIMM 144 contacts


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    EDI2AG27265V 2x64Kx72, 2x64kx72 EDI2AG27265VxxD1 2x64Kx72. EDEC14mmx20mm EDI2AG27265V9D1* 2x64Kx72 EDI2AG27265V10D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES The EDI2CG27264VxxD2 is a Synchronous/Synchronous Burst 2x64Kx72 Synchronous, Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. Flow-Through Architecture The Module contains four (4) Synchronous Burst Ram Devices,


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    EDI2CG27264V EDI2CG27264VxxD2 2x64Kx72 14mmx20mm EDI2CG27264V85D1* 2x64Kx72 EDI2CG27264V9D1* EDI2CG27264V1 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8L21665V 9 *fijiifiiiR Asvn^hrnnw is ^0V w N The EDI8L21665V is a memberof EDTs Asynchronous SRAM family designed in support of Texas instruments TMS320C5x DSPs. The 2x64Kx16SRAMisa3.3V, 2 megabit SRAM constructed with two 64K x 16 die mounted on a multi-layer substrate. Thedeviceis


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    EDI8L21665V EDI8L21665V TMS320C5x 2x64Kx16SRAMisa3 x15mm, 12nsand15ns. EDJ8L21665V 2x16Kx16 EDJ8L216128V 2x128Kx16 PDF

    2x16K

    Abstract: DSP16210 MO-151
    Text: ^EDI DSP SOLUTIONS Memory Solution for lucentTechnologies DSP16210 ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kxl6 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of LucentTechnologies DSP16210 DSPs. The


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    DSP16210 EDI8L21665V 2k64Kk16 DSP16210 2x64Kx16 15mmx 12nsand 2x16Kx16 2x16K MO-151 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2AG27265V 1Megabyte Sync/Sync Burst, Small Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture


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    2x64kx72 EDI2AG27265V 2x64Kx72, SDI2AG27265V9D1* EDI2AG27265V10D1 EDI2AG27265V12D1 2x64Kx72 PDF

    JEDECMO-151

    Abstract: A15B
    Text: ^EDI EDI8L21664V h ELECTRONIC DESIGNS, INC 2xS4Kx1SSRAM TMS320C54X External SRAM Memory Solution Features The E D I8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith tw o 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


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    EDI8L21664V TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC EDI8L21664V15BC JEDECMO-151 A15B PDF

    Untitled

    Abstract: No abstract text available
    Text: DSP SOLUTIONS Memory Solution for Lucent Technologies DSP16210 H f l L . LX I ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kx16 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of Lucent Technologies DSP16210 DSPs. The


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    DSP16210 EDI8I21665V 2x64Kx16 EDI8L21665V DSP16210 EDI8L21665V 2x16Kx16 EDI8L21665VxxBC EDI8L216128VxxBC PDF

    A15B

    Abstract: No abstract text available
    Text: ^EDI EDI8L21664V h El£CTRO*«C 0C9CN& NC.1 2xS4KxieSRAM TMS320C54XExternalSRAM MemorySolution F eatures The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi­ layer laminate substrate. The device is packaged in a 74


    OCR Scan
    TMS320C54XExternalSRAM TMS320C54x MO-151 EDI8L21664V EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC EDI8L21664V A15B PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EEH2AG27265V 1Megabyte Sync/Sync Burst, ^ ^ ^ ^ S m a ll Outline DIMM •ELECTRONIC DESI SMS, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64kx72 Synchronous, Synchronous Burst ■ Flow-Through Architecture • Sequential Burst MODE


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    EEH2AG27265V 2x64Kx72, EDI2AG27265VxxD1 2x64Kx72. JEDEC14mmx20mmTQFP ay265V 265V85D1 EDI2AG27265V9D1 EDI2AG27265V1 EDI2AG272G5V12D1 PDF

    LH Research

    Abstract: No abstract text available
    Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, SfTISlI O utline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64Kx72 Synchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­ Flow-Through A rchitecture


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    EDI2AG27264V 2x64Kx72 2x64Kx72, EDI22AG27264V85D1 EDI22AG27264V9D1 EDI22AG27264V10D1 EDI22AG27264V12D1 LH Research PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2AG27265V 1 Megabyte Sync/Sync Burst, ^ m S m a l l Outline DIMM ELECTRONIC DESIGNS, IN C A DVANCED 2x64Kx72, 3.3V Module Features Sync/Sync B urst Flow-Through • 2x64kx72 S ynchronous, S ynchronous Burst • Flow-Through A rchitecture • Sequential B urst MODE


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    EDI2AG27265V 2x64Kx72, 2x64kx72 2x64Kx72. EDI2AG27265VxxD1 2x64K 7265V PDF

    Untitled

    Abstract: No abstract text available
    Text: T T ir r \| K n A I“ 1 1 EDI2AG27264V 1Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64K x72 S ynchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro­


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    EDI2AG27264V 2x64Kx72, 2x64K EDI22AG27264V10D1 EDI22AG27264V12D1 PDF

    DG33

    Abstract: d036
    Text: ^EDI EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM •ELECTRONIC DESISM5, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64Kx72 Synchronous, Synchronous Burst The EDI2CG27264VxxD2 is a Synchronous/Synchro­ nous Burst SRAM, 72 position DIMM 144 contacts


    OCR Scan
    EDI2CG27264V 2x64Kx72, EDI2CG27264VxxD2 14mmx20mm EDI2CG27264V85D1* EDI2CG27264V9D1 EDI2CG27264V1 EDI2CG272G4V12D1 2x64Kx72 DG33 d036 PDF

    LH Research mm

    Abstract: LH Research
    Text: M D EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS, IN C ADVANCED 2x64Kx72, 3.3V I Module Features Sync/Sync Burst Flow-Through ♦ 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro­


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    EDI2AG27265V 2x64kx72 2x64Kx72, T265V85D1 144SO-DIMM EDI2AG27265V9D1 EDI2AG27265V10D1 LH Research mm LH Research PDF