philips 8051 microcontroller bootloader isp data
Abstract: No abstract text available
Text: CRD89C512RD Technologies Inc. Datasheet Rev 1.0 CRD89C512RD 8-Bit Microcontroller with 2x64KB ISP Flash, 1KB of SRAM, PWMs Product List Feature Set CRD89C512RD-40 5V, 40MHz 128KB ISP flash MCU • • • Description • • • • • • • • • •
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CRD89C512RD
2x64KB
CRD89C512RD-40
40MHz
128KB
CRD89C512RD
20/as
philips 8051 microcontroller bootloader isp data
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs EDI8L21665V 2x64Kx16 SRAM FEATURES DSP Memory Solution The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.
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EDI8L21665V
2x64Kx16
EDI8L21665VxxBC
64Kx16
TMS320C5x
TMS320C5x
EDI8L21665V10BC
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Untitled
Abstract: No abstract text available
Text: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear and Sequential Burst Support via MODE pin • Clock Controlled Registered Bank Enables E1\, E2\ •
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EDI2CG27264V
EDI2CG27264VxxD2
2CG27264V
EDI2CG27264V85D1*
EDI2CG27264V9D1*
EDI2CG27264V10D1
EDI2CG27264V12D1
2x64Kx72
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A15A
Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
Text: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access
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EDI8L21664V
2x64Kx16
TMS320C54x
EDI8L21664VxxBC
64Kx16
DQ0-15)
EDI8L21664V10BC
A15A
A15B
EDI8L21664V
MO-151
9704
64k x 16 SRAM
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AA01
Abstract: aa11
Text: EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES • 2x64kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Sequential Burst MODE • Clock Controlled Registered Bank Enables E1\, E2 • Clock Controlled Byte Write Mode Enable (BWE\)
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EDI2AG27265V
EDI2AG27265VxxD1
y1999
EDI2AG27265V85D1*
EDI2AG27265V9D1*
EDI2AG27265V10D1
EDI2AG27265V12D1
2x64Kx72
AA01
aa11
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LH Research
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM ADVANCED Advanced 2x64Kx72, 3.3V Sync/Sync Burst Flow-Through Module Features • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear Burst MODE • Clock Controlled Registered Bank
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EDI2AG27264V
2x64Kx72,
2x64Kx72
EDI2AG27264VxxD1
Module64Kx72
2x64Kx72
01581USA
EDI2AG27264V
LH Research
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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A15B
Abstract: A15A EDI8L21664V MO-151
Text: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.
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EDI8L21664V
TMS320C54x
EDI8L21664VxxBC
2x64Kx16
64Kx16
TMS320C54x
EDI8L21664V10BC
A15B
A15A
EDI8L21664V
MO-151
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diode a15a
Abstract: A15A A15B TMS320C5x dsp block diagram MO-151 a014g
Text: EDI8L21665V 2x64Kx16 SRAM, DSP Memory Solution FEATURES DESCRIPTION • Access Times of 10, 12 and 15ns The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.
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EDI8L21665V
2x64Kx16
EDI8L21665VxxBC
64Kx16
TMS320C5x
TMS320C5x
MO-151
TMS320C54X.
diode a15a
A15A
A15B
TMS320C5x dsp block diagram
MO-151
a014g
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A15A
Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti • Texas Instruments TMS320C54x
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EDI8L21664V
2x64Kx16SRAM
TMS320C54x
MO-151
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
A15A
A15B
EDI8L21664V
MO-151
9704
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI2KG41864V 576Kilobyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 2x64Kx18, 3 .3 V Module Features Synchronous Flow-Through • 4x64K x18 Synchronous • Flow-Through A rchitecture • C lock Controlled Registered Bank Enables E1\, nized as 4x64Kx18.
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EDI2KG41864V
576Kilobyte
2x64Kx18,
4x64K
4x64Kx18.
472256VxxD
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI2AG27265V 1Megabyte Sync/Sync Burst, Sm all Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64kx72 Synchronous, Synchronous Burst The EDI2AG27265VxxD1 is a Synchronous/Synchro nous Burst SRAM, 72 position 30 DIMM 144 contacts
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EDI2AG27265V
2x64Kx72,
2x64kx72
EDI2AG27265VxxD1
2x64Kx72.
EDEC14mmx20mm
EDI2AG27265V9D1*
2x64Kx72
EDI2AG27265V10D1
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Untitled
Abstract: No abstract text available
Text: EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES The EDI2CG27264VxxD2 is a Synchronous/Synchronous Burst 2x64Kx72 Synchronous, Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, small outline. Flow-Through Architecture The Module contains four (4) Synchronous Burst Ram Devices,
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EDI2CG27264V
EDI2CG27264VxxD2
2x64Kx72
14mmx20mm
EDI2CG27264V85D1*
2x64Kx72
EDI2CG27264V9D1*
EDI2CG27264V1
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Untitled
Abstract: No abstract text available
Text: EDI8L21665V 9 *fijiifiiiR Asvn^hrnnw is ^0V w N The EDI8L21665V is a memberof EDTs Asynchronous SRAM family designed in support of Texas instruments TMS320C5x DSPs. The 2x64Kx16SRAMisa3.3V, 2 megabit SRAM constructed with two 64K x 16 die mounted on a multi-layer substrate. Thedeviceis
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EDI8L21665V
EDI8L21665V
TMS320C5x
2x64Kx16SRAMisa3
x15mm,
12nsand15ns.
EDJ8L21665V
2x16Kx16
EDJ8L216128V
2x128Kx16
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2x16K
Abstract: DSP16210 MO-151
Text: ^EDI DSP SOLUTIONS Memory Solution for lucentTechnologies DSP16210 ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kxl6 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of LucentTechnologies DSP16210 DSPs. The
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DSP16210
EDI8L21665V
2k64Kk16
DSP16210
2x64Kx16
15mmx
12nsand
2x16Kx16
2x16K
MO-151
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI2AG27265V 1Megabyte Sync/Sync Burst, Small Outline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro Flow-Through A rchitecture
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2x64kx72
EDI2AG27265V
2x64Kx72,
SDI2AG27265V9D1*
EDI2AG27265V10D1
EDI2AG27265V12D1
2x64Kx72
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JEDECMO-151
Abstract: A15B
Text: ^EDI EDI8L21664V h ELECTRONIC DESIGNS, INC 2xS4Kx1SSRAM TMS320C54X External SRAM Memory Solution Features The E D I8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith tw o 64Kx16 die mounted on a m ulti • Texas Instruments TMS320C54x
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EDI8L21664V
TMS320C54x
MO-151
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
EDI8L21664V15BC
JEDECMO-151
A15B
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Untitled
Abstract: No abstract text available
Text: DSP SOLUTIONS Memory Solution for Lucent Technologies DSP16210 H f l L . LX I ELECTRONIC DESIGNS, INC. EDI8I21665V 2x64Kx16 Asynchronous SRAM The EDI8L21665V is a member of EDI’s Asynchronous SRAM family designed in support of Lucent Technologies DSP16210 DSPs. The
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DSP16210
EDI8I21665V
2x64Kx16
EDI8L21665V
DSP16210
EDI8L21665V
2x16Kx16
EDI8L21665VxxBC
EDI8L216128VxxBC
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A15B
Abstract: No abstract text available
Text: ^EDI EDI8L21664V h El£CTRO*«C 0C9CN& NC.1 2xS4KxieSRAM TMS320C54XExternalSRAM MemorySolution F eatures The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi layer laminate substrate. The device is packaged in a 74
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OCR Scan
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TMS320C54XExternalSRAM
TMS320C54x
MO-151
EDI8L21664V
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
EDI8L21664V
A15B
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Untitled
Abstract: No abstract text available
Text: ^EDI EEH2AG27265V 1Megabyte Sync/Sync Burst, ^ ^ ^ ^ S m a ll Outline DIMM •ELECTRONIC DESI SMS, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64kx72 Synchronous, Synchronous Burst ■ Flow-Through Architecture • Sequential Burst MODE
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EEH2AG27265V
2x64Kx72,
EDI2AG27265VxxD1
2x64Kx72.
JEDEC14mmx20mmTQFP
ay265V
265V85D1
EDI2AG27265V9D1
EDI2AG27265V1
EDI2AG272G5V12D1
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LH Research
Abstract: No abstract text available
Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, SfTISlI O utline DIMM ELECTRONIC DESIGNS IN C ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64Kx72 Synchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro Flow-Through A rchitecture
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EDI2AG27264V
2x64Kx72
2x64Kx72,
EDI22AG27264V85D1
EDI22AG27264V9D1
EDI22AG27264V10D1
EDI22AG27264V12D1
LH Research
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI2AG27265V 1 Megabyte Sync/Sync Burst, ^ m S m a l l Outline DIMM ELECTRONIC DESIGNS, IN C A DVANCED 2x64Kx72, 3.3V Module Features Sync/Sync B urst Flow-Through • 2x64kx72 S ynchronous, S ynchronous Burst • Flow-Through A rchitecture • Sequential B urst MODE
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EDI2AG27265V
2x64Kx72,
2x64kx72
2x64Kx72.
EDI2AG27265VxxD1
2x64K
7265V
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Untitled
Abstract: No abstract text available
Text: T T ir r \| K n A I“ 1 1 EDI2AG27264V 1Megabyte Sync/Sync Burst, Small Outline DIMM e le c t r o n ic d esig n & in c ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 2x64K x72 S ynchronous, S ynchronous Burst The EDI2AG27264VxxD1 is a S ynchronous/S ynchro
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OCR Scan
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EDI2AG27264V
2x64Kx72,
2x64K
EDI22AG27264V10D1
EDI22AG27264V12D1
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DG33
Abstract: d036
Text: ^EDI EDI2CG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM •ELECTRONIC DESISM5, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64Kx72 Synchronous, Synchronous Burst The EDI2CG27264VxxD2 is a Synchronous/Synchro nous Burst SRAM, 72 position DIMM 144 contacts
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EDI2CG27264V
2x64Kx72,
EDI2CG27264VxxD2
14mmx20mm
EDI2CG27264V85D1*
EDI2CG27264V9D1
EDI2CG27264V1
EDI2CG272G4V12D1
2x64Kx72
DG33
d036
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LH Research mm
Abstract: LH Research
Text: M D EDI2AG27265V 1 Megabyte Sync/Sync Burst, Small Outline DIMM \ ELECTRONIC DESIGNS, IN C ADVANCED 2x64Kx72, 3.3V I Module Features Sync/Sync Burst Flow-Through ♦ 2x64kx72 S ynchronous, S ynchronous Burst The EDI2AG27265VxxD1 is a S ynchronous/S ynchro
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EDI2AG27265V
2x64kx72
2x64Kx72,
T265V85D1
144SO-DIMM
EDI2AG27265V9D1
EDI2AG27265V10D1
LH Research mm
LH Research
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