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    2T3 TRANSISTOR Search Results

    2T3 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2T3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC26C562

    Abstract: SC26C562A8A SC26C562C1A SC26C562C1N SC68C562 SCN26562 Dual Output Universal IR Remote Switch Chip
    Text: • hb53TEM ODTMBTM 2T3 « S I C 3 Philips Semiconductors Data Communications Products Product specification CMOS dual universal serial communications controller CDUSCC DESCRIPTION SC26C562 • Watchdog timer The Philips Semiconductors SC26C562 Dual Universal Serial


    OCR Scan     		PDF bb53T24 SC26C562 SC26C562 10MHz 150pF 100pF SC26C562A8A SC26C562C1A SC26C562C1N SC68C562 SCN26562 Dual Output Universal IR Remote Switch Chip

    Untitled

    Abstract: No abstract text available
    Text: • 7TSTE37 0ü 4b l03 2T3 ■ S G T H _ rZ 7 SGS-THOMSON Ä 7# « fô m io * ! S T K 1 7 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ . ■ ■ ■ ■ . TYPE V dss RDS on Id STK17N10 100 V < 0.11 n 17 A TYPICAL RDS(on) = 0.09 Q


    OCR Scan     		PDF 7TSTE37 STK17N10

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package


    OCR Scan     		PDF 43D2271 FRK150 2N7291D, 2N7291R 2N7291H T0-204AE 100KRAD 300KRAD 1000KRAD 3000KHAD

    2SC3858

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LT» SSE D • 7^0741 □ D D D t170 2T3 « S A K J Silicon N P N Triple Diffused Planar 2SC3858 -F 3 S r ß ☆ Com plem en t to type 2 S A 1 4 9 4 Application Example : e Outline Drawing 3 . . M T -2 0 0 A u d io and General Purpose


    OCR Scan     		PDF 2SC3858 100max 200min 45x01 T0220) 2SC3858

    BFW11

    Abstract: bfw11 equivalent BFW10 in drain resistance
    Text: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential


    OCR Scan     		PDF BFW10 BFW11 bb53T31 DQ3S77b BFW11 bfw11 equivalent BFW10 in drain resistance

    Untitled

    Abstract: No abstract text available
    Text: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE


    OCR Scan     		PDF AM82731 00b50f

    Untitled

    Abstract: No abstract text available
    Text: TIP34; A; B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _J K SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SO T -93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are


    OCR Scan     		PDF TIP34; TIP33, TIP33A, TIP33B TIP33C. TIP34

    t559

    Abstract: No abstract text available
    Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1378 OT-143 fl235bG5 53SLDS t559

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 45 BUZ 45 A, BUZ 45 B SIPMOS Power Transistors • • N channel Enhancement mode Type Vos To ^DS on Package ’> Ordering Code BUZ 45 500 V 9.6 A 25 ”C 0.6 £2 TO-204 AA C67078-A1008-A8 BUZ 45 A 500 V 8.3 A 25 'C 0.8 n TO-204 AA C67078-A1008-A9


    OCR Scan     		PDF O-204 C67078-A1008-A8 C67078-A1008-A9 C67078-A1008-A10 fl235bG 6235b05

    Untitled

    Abstract: No abstract text available
    Text: TLP120JLP120-4 GaAs IRED & PHOTO-TRANSISTOR TLP120 P R O G R A M M A BL E CONTROLLERS U nit in mm A C/DC-INPUT M O D ULE TELEC O M M U N IC A TIO N The TOSHIBA MINI FLAT COUPLER TLP120 and TLP120-4 is a small outline coupler, suitable for surface m ount assembly.


    OCR Scan     		PDF P120JLP1 TLP120) TLP120 TLP120-4 3750Vrms UL1577, E673CURRENT

    BSW68A 1990

    Abstract: bsw68a
    Text: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


    OCR Scan     		PDF BSW66A BSW67A BSW68A BY206 BSW68A 1990 bsw68a

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A RN1201 ~ R N 1 206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN 1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 4 .8 M A X . • W ith Built-in Bias Resistors


    OCR Scan     		PDF RN1201 RN1201, RN1202, RN1203, RN1205, RN1206 RN2201 RN1202 RN1203

    2508DF

    Abstract: bu2508df
    Text: N A PIER P H I L I P S / D I S C R E T E bbS3T31 0026357 673 * A P X b'lE D Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


    OCR Scan     		PDF bbS3T31 BU2508DF 002fl3b2 OT199; 2508DF bu2508df

    IRGAC50F

    Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
    Text: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC50F 40HFL60 S54S5 lflb43 SS452 lflb44 G37 IC J3060 transistor g35 ecs g41 IRGAC50

    j310 equivalent

    Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3


    OCR Scan     		PDF 711002b 010bb02 010bb03 j310 equivalent J310 J310 applications J309 Transistor J310 J308 MCD221

    BFG591 amplifier

    Abstract: BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor DIN45004B NPN power transistor spice
    Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency


    OCR Scan     		PDF BFG591 OT223 MSB002 OT223. 711005b BFG591 amplifier BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor DIN45004B NPN power transistor spice

    BFG591

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA TUR ES D ES C R IPTIO N • High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin S O T 223 package. • Low noise figure • High transition frequency


    OCR Scan     		PDF BFG591 voltage929 7110A2b BFG591

    supersot-3

    Abstract: 2T3 transistor NDS335N FR 014 S0113D
    Text: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS335N OT-23 OT-23) NDS33SN supersot-3 2T3 transistor NDS335N FR 014 S0113D

    Untitled

    Abstract: No abstract text available
    Text: 3 HFA3127/883 February 1995 Ultra High Frequency Transistor Array Features Description • This Circuit is Processed In Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA3127/883 is an Ultra High Frequency Transistor


    OCR Scan     		PDF HFA3127/883 MIL-STD883 HFA3127/883

    TN0606N7

    Abstract: 2T-3
    Text: G à S u p e r te x in c TN0606 TN0610 . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R q S ON (max) Order Num ber / Package f b v dgs V GS(ttl) i B V DSS/ (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICEt 60V 1.5Q


    OCR Scan     		PDF TN0606 TN0610 TN0606N2 TN0610N2 TN0606N3 TN0610N3 O-220 TN0606N5 TN0610N5 TN0606N6 TN0606N7 2T-3

    vertical IC tv crt

    Abstract: 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502
    Text: Continued fra.71 D.-ewouS oage Absolute maximum ratings Electrical characteristics Ta = 25 Package V tfiu VcEO (V ' (V) Vcao • (V) ; le (A) Pc (W) T, (C ) ICBO max @ Vcb f0 ,¡«Cl Ic b o max Vcb h fE @ Vce - lc tlFE Ci . *T Vce ■ lc Vce Ic tr Vce 2SC4827


    OCR Scan     		PDF 2SC4827 2SC4884 2SA1875* 2SC4976* 2SC4567 T0220 2SB1037 2SD1459 vertical IC tv crt 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502

    CM300DY-12E

    Abstract: CM300DY-12 K071 BP107
    Text: bME D • 72^21 Q00b752 m 41D « P R X CM300DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.14 powerex inc Dual IGBTMOD _ . . . , ,


    OCR Scan     		PDF 72T4bSl Q00b752 CM300DY-12E BP107, Amperes/600 CM300DY-12 CM300DY-12E K071 BP107

    LF353

    Abstract: T-099
    Text: n r z S G S -TH O M SO N H O »iüH M sM (gI LF153 LF253 - LF353 WIDE BANDWIDTH DUAL J-FET OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION


    OCR Scan     		PDF LF153 LF253 LF353 Gain-of-10 T-099

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD2835LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diodes MMBD2835LT1 M M B D 2836LT1 CATHODE H ANODE 3 -N o1 02 CATHODE CASE 318-08, STYLE 12 SOT-23 TO-236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage


    OCR Scan     		PDF MMBD2835LT1/D MMBD2835LT1 2836LT1 OT-23 O-236AB) MMBD2836LT1