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    2SK2759 Search Results

    2SK2759 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2759 Fuji Electric N-channel MOS-FET Original PDF
    2SK2759-01R Fuji Electric N-Channel Silicon Power MOSFET Original PDF
    2SK2759-01R Fuji Electric N-channel MOS-FET Original PDF
    2SK2759-01R Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK2759-01R Fuji Electric N-channel MOS-FET Scan PDF

    2SK2759 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2759-01R

    Untitled

    Abstract: No abstract text available
    Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications 3.2 +0.3 Switching regulators UPS Uninterruptible Power Supply DC-DC converters ±0.3 20 Min


    Original
    PDF 2SK2759-01R

    2SK2759-01R

    Abstract: No abstract text available
    Text: 2SK2759-01R N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Ω 15A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2759-01R 2SK2759-01R

    2SK2759-01R

    Abstract: No abstract text available
    Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2759-01R 2SK2759-01R

    CF12-0

    Abstract: No abstract text available
    Text: 2SK2759-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    PDF 2SK2759-01R CF12-0

    Untitled

    Abstract: No abstract text available
    Text: 2SK2759-01R N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Ω 15A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2759-01R

    2SK2759-01R

    Abstract: No abstract text available
    Text: 2SK2759-01R N-channel MOS-FET FAP-IIS Series 500V > Features - 0,55Ω 15A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -


    Original
    PDF 2SK2759-01R 2SK2759-01R

    2SK3102-01R

    Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01


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    PDF 2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


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    PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2sk3337

    Abstract: 2sk3102 2SK3264
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type Amps. Amps. 400 23 92 0.2 295 ±30 3.0 TO-247 5.5 450


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    PDF 2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2sk3337 2sk3102 2SK3264

    2SK4111

    Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
    Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original
    PDF 2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666

    2SK2645

    Abstract: 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879
    Text: Feb-00 VDSS 300 to 600 volts Series Package F-II series FAP-II series T-Pack TO-220AB Drain-source voltage VDSS Voltage 300 450 2SK1007(5, 1.6) 2SK2523(9, 1.0) TO-220F15 2SK2469(5, 1.0) 2SK1006(5, 1.6) 2SK2470(10, 0.53) 2SK2524(9, 1.0) TO-3P 2SK2471(10, 0.53) 2SK2525(9, 1.0)


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    PDF Feb-00 O-220AB 2SK1007 2SK2523 O-220F15 2SK2469 2SK1006 2SK2470 2SK2524 2SK2471 2SK2645 2SK2642 2SK2761 2SK1938 2sk2876 2SK1941 2SK2638 2sk2257 2SK2834 2SK2879

    2SK2759-01R

    Abstract: No abstract text available
    Text: FUJI 2SK2759-01R s ta is ir itìu e FAP-IIS Series N-channel MOS-FET 500V 0,55Q 15A 80W > Features - > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan
    PDF 2SK2759-01R

    2sk2645

    Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
    Text: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    PDF 2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 O-220 2SK27S8-01L 2SK2641-01 2sk2645 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 •900 Volts Device Type 2SK2638-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    PDF 2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L 2SK2641-01 FAP450

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2759-01R N-channel MOS-FET IM U J M e u lM J E FAP-IIS Series 500V > Features 0,55Q 15A 80W > Outline Drawing TO-3PF - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated


    OCR Scan
    PDF 2SK2759-01R

    Untitled

    Abstract: No abstract text available
    Text: I S P E C I F I C A T I O N T E N T A T I V E DEV ICE NAME : P o w e r M Q S F E T TYPE NAME : 2 S K 2 7 5 9 - 0 1 R SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE )RAW N IHECKEO NAME APPROVED Fuji Electric C 0 4 L M


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    PDF 2SK2759-01R 025T-R -I113

    003A

    Abstract: 2SK2759 2SK2759-01R
    Text: S P E C I F I C A T I O N T E N T A T I V E DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 7 5 9 - 0 1R SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJLid


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    PDF 2SK2759-01R 0257-R-004a Dpu191 150-003a 0257-R-003a 003A 2SK2759 2SK2759-01R

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan
    PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    2SK2645-01MR

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type MaximumRaBn V d ss 450 450 450 450 450 2SK2538-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M R 500 500 500 iskifst-W


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    PDF 2SK2538-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M 2SK264M FAP456 2SK2759-01R 2SK2643-01 2SK2645-01MR

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan
    PDF 2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


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    PDF F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


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    PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R