Untitled
Abstract: No abstract text available
Text: 2SK2652-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2652-01
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2SK2652-01
Abstract: No abstract text available
Text: 2SK2652-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2652-01
2SK2652-01
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Untitled
Abstract: No abstract text available
Text: 2SK2652-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2652-01
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK2652-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK2652-01
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2SK2652-01
Abstract: 900V2
Text: 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2652-01
2SK2652-01
900V2
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Untitled
Abstract: No abstract text available
Text: 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2652-01
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2SK2652-01
Abstract: mosfet 600V 6A N-CHANNEL
Text: 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2,5Ω 6A 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2652-01
2SK2652-01
mosfet 600V 6A N-CHANNEL
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2SK2696
Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack
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O-220AB
O-220F15
Feb-00
2SK2696
2SK951
2SK2397
2SK2527
2SK2528
2SK2100
2SK2696
2sk3264
2SK2850
2sk2850 DATASHEET
2SK2648
2sk2648 transistor
2SK2654
2sk2648 equivalent
2SK2100
2SK2647
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2sk3337
Abstract: 2SK2655-01R
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated（Continued） 形 式 Device type 2SK2767-01 2SK2768-01L, S 2SK2769-01MR
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2SK2767-01
2SK2768-01L,
2SK2769-01MR
2SK2770-01
2SK2651-01MR
2SK2652-01
2SK2850-01
2SK2653-01R
2SK2654-01
2SK2655-01R
2sk3337
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2SK3102-01R
Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2SK3102-01R
2sk3102
2SK2850
2SK2640
2SK3264
2SK2640 equivalent
2SK2645
2SK3264-01MR
2sk3102-01
2SK2648 equivalent
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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2sk3337
Abstract: 2sk3102 2SK3264
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type Amps. Amps. 400 23 92 0.2 295 ±30 3.0 TO-247 5.5 450
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2SK3340-01
2SK2870-01L,
2SK2871-01
2SK2872-01MR
2SK2873-01
2SK2638-01MR
2SK2639-01
2SK2754-01L,
2SK2755-01
2SK2756-01R
2sk3337
2sk3102
2SK3264
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Untitled
Abstract: No abstract text available
Text: FU JI HUMâïïjeOE 2SK2652-01 N-channel MOS-FET FAP-IIS Series 900V > Features 2 ,5 0 6A > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated
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2SK2652-01
VCC-90V.
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Untitled
Abstract: No abstract text available
Text: 2SK2652-01 FU JI N-channel MOS-FET 900V FAP-IIS Series > Features - 6A 2,5Q 125W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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2SK2652-01
Tc-25â
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Untitled
Abstract: No abstract text available
Text: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.
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2SK2646-01
2SK2647-01MR
2SK2762-01L,
2SK2763-01
2SK2764-01R
2SK2765-01
2SK2766-01R
2SK2648-01
2SK2649-01R
2SK2767-01
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2SK2645-01MR
Abstract: No abstract text available
Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type MaximumRaBn V d ss 450 450 450 450 450 2SK2538-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M R 500 500 500 iskifst-W
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2SK2538-01MR
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK264041M
2SK264M
FAP456
2SK2759-01R
2SK2643-01
2SK2645-01MR
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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2sk2645
Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
Text: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R
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2SK2638-01MR
2SK2754-01L
2SK2639-01
2SK2756-01R
2SK2755-01
2SK2640-01MR
2SK27S7-01
O-220
2SK27S8-01L
2SK2641-01
2sk2645
2SK2648
2SK2655
2SK2759-01R
TO-3PF
2SK2761
2SK2761-01MR
2SK2769-01MR
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D03A
Abstract: 2SK2652-01 SC-65 T151
Text: S P E C I F I C A T I O N DEVICE NAME TYPE NAME P owe r MOSFET 2 S K 2 6 5 2- 0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e cifica tio n is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric C a ¿ M CHECKED il Y 0257-R-004a
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2SK2652-01
0257-R-004a
D03A
2SK2652-01
SC-65
T151
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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