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    2SK2654 Price and Stock

    Fuji Electric Co Ltd 2SK2654

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    Fuji Electric Co Ltd 2SK2654-01

    POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 900V, 2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2654-01 10
    • 1 $20
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    • 1000 $15
    • 10000 $15
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    2SK2654 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2654 Fuji Electric N-channel MOS-FET Original PDF
    2SK2654-01 Fuji Electric MOSFET / Power MOSFET Selection Guide Original PDF
    2SK2654-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK2654-01 Collmer Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Mosfets, 900V, Package Style TO_P Scan PDF
    2SK2654-01 Fuji Electric N-channel MOS-FET Scan PDF

    2SK2654 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sk2654

    Abstract: 2SK2654-01
    Text: 2SK2654-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2Ω 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    2SK2654-01 2sk2654 2SK2654-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2654-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2Ω 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    2SK2654-01 PDF

    MOSFET 8A 900V

    Abstract: 2SK2654-01
    Text: 2SK2654-01 N-channel MOS-FET FAP-IIS Series 900V > Features - 2Ω 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original
    2SK2654-01 MOSFET 8A 900V 2SK2654-01 PDF

    2SK2654

    Abstract: 2SK2654-01
    Text: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2654-01 2SK2654 2SK2654-01 PDF

    2sk2654

    Abstract: 2SK2654-01
    Text: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2654-01 2sk2654 2SK2654-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2654-01 PDF

    2SK2654-01

    Abstract: No abstract text available
    Text: 2SK2654-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original
    2SK2654-01 SC-65 2SK2654-01 PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original
    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


    Original
    O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647 PDF

    IRF 548

    Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39


    Original
    1N5333B 1N914 2N5886 30WQ04FN 1N5335B 1SMB15AT3 2N6027 30WQ06FN 1N5336B 2N6028 IRF 548 irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original
    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    2sk3337

    Abstract: 2SK2655-01R
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated(Continued) 形 式 Device type 2SK2767-01 2SK2768-01L, S 2SK2769-01MR


    Original
    2SK2767-01 2SK2768-01L, 2SK2769-01MR 2SK2770-01 2SK2651-01MR 2SK2652-01 2SK2850-01 2SK2653-01R 2SK2654-01 2SK2655-01R 2sk3337 PDF

    2SK3102-01R

    Abstract: 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIS シリーズ FAP-IIS series 高温・連続アバランシェ耐量保証 Repetitive avalanche rated 形 式 Device type 2SK3340-01 2SK2870-01L, S 2SK2871-01 2SK2872-01MR 2SK2873-01


    Original
    2SK3340-01 2SK2870-01L, 2SK2871-01 2SK2872-01MR 2SK2873-01 2SK2638-01MR 2SK2639-01 2SK2754-01L, 2SK2755-01 2SK2756-01R 2SK3102-01R 2sk3102 2SK2850 2SK2640 2SK3264 2SK2640 equivalent 2SK2645 2SK3264-01MR 2sk3102-01 2SK2648 equivalent PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    L04A

    Abstract: No abstract text available
    Text: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance


    OCR Scan
    2SK2654-01 Vcc-90V; L04A PDF

    2SK2654

    Abstract: No abstract text available
    Text: FU JI 2SK2654-01 IM lÜ M e u te J E FAP-IIS Series N-channel MOS-FET > Features - 2Q 900V TO-3P 4.5 LM Switching Regulators UPS DC-DC converters General Purpose Power Amplifier J i. > Maximum Ratings and Characteristics Item Drain-Source-Voltage Continous Drain Current


    OCR Scan
    2SK2654-01 2SK2654 PDF

    mt 10p10

    Abstract: 10P10 MT A 10P10 AR 8 2sk2654 2SK2654-01
    Text: FUJI 2SK2654-01 iM iü M e u iM J E FAP-IIS Series N-channet MOS-FET 90 0V > Features - 2Q 8A 150W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated


    OCR Scan
    2SK2654-01 mt 10p10 10P10 MT A 10P10 AR 8 2sk2654 PDF

    Untitled

    Abstract: No abstract text available
    Text: JE /V 7 -M 0 S F E T / Power MOSFETs FA P-IIS '> V - X FA P-IIS series iWi>m • ^c77/ ’i' - 7 > '> 1 iiM f S s I m s Device type Voss Voita Repetitive avalanche rated to Id pulse Amps. Amps. I t e (on) Max. * ’ Ohms (Si) Pd * V gss Vos (th) Typ.


    OCR Scan
    2SK2646-01 2SK2647-01MR 2SK2762-01L, 2SK2763-01 2SK2764-01R 2SK2765-01 2SK2766-01R 2SK2648-01 2SK2649-01R 2SK2767-01 PDF

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan
    1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050 PDF

    2SK2645-01MR

    Abstract: No abstract text available
    Text: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type MaximumRaBn V d ss 450 450 450 450 450 2SK2538-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M R 500 500 500 iskifst-W


    OCR Scan
    2SK2538-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK264041M 2SK264M FAP456 2SK2759-01R 2SK2643-01 2SK2645-01MR PDF

    L-698

    Abstract: FAIU
    Text: _L S P E C 1 F 1 C A T I O N DEVICE NAME : TYPE NAME : SPEC. No. : P o w e r M O S F E T 2 S K 2 6 5 4— 0 1 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. NAM E DATE . — APPROVED Fuji Electric Cc^Ltd. DRAWN o z CHECKED


    OCR Scan
    0257-R-C L-698 FAIU PDF

    ET412

    Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
    Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646


    OCR Scan
    2SB1532 2SC3821 2SC3822 2SC3865 2SC3886 2SC4383 2SC4507 2SC4508 2SD1726 2SD1740 ET412 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082 PDF

    2SK2652

    Abstract: 2SK2771-01R
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan
    F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    2sk2645

    Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
    Text: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan
    2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 O-220 2SK27S8-01L 2SK2641-01 2sk2645 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR PDF