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    2SK2605 TRANSISTOR Search Results

    2SK2605 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SK2605 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


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    2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 PDF

    2SK2605

    Abstract: 2sK2605 TRANSISTOR
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


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    2SK2605 2SK2605 2sK2605 TRANSISTOR PDF

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    Abstract: No abstract text available
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


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    2SK2605 PDF

    K2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


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    2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR PDF

    2SK2605

    Abstract: 2sK2605 TRANSISTOR
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.8 S (typ.) l Low leakage current


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    2SK2605 2SK2605 2sK2605 TRANSISTOR PDF

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


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    2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Text: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


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    2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 PDF

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


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    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn PDF

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


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    SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52 PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853 PDF

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


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    p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    2SK2605

    Abstract: Diode FAJ 45 2sK2605 TRANSISTOR Diode FAJ 22
    Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 03.2 ± 0.2 . 2.7± 0.2 J •


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    2SK2605 2SK2605 Diode FAJ 45 2sK2605 TRANSISTOR Diode FAJ 22 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 0 ± 0.3 • • • • ^ 3.2 ± 0.2 2 .7 1 0 .2


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    2SK2605 PDF

    ss100 transistor

    Abstract: 2SK2605 transistor ss100 2sK2605 TRANSISTOR
    Text: TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd s 0N “ 1*90 (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.)


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    2SK2605 SS-100/ ss100 transistor 2SK2605 transistor ss100 2sK2605 TRANSISTOR PDF

    transistor 2sk2605

    Abstract: 2sk2605 j3d marking
    Text: T O SH IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rßg (ON)= 1-9^ (Typ.) tt: j.x ig_ln tti_


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    2SK2605 s100//s J--25 --90V, --27mH transistor 2sk2605 2sk2605 j3d marking PDF

    ss100 transistor

    Abstract: 2SK2605
    Text: T O S H IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Soree ON Resistance : Typ. High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.) Low Leakage Current : I d SS“ 100/^A (Max.) (Vj)g = 640V)


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    2SK2605 SS-100/ ss100 transistor 2SK2605 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2605 T O SH IB A FIELD EFFECT TRANSISTO R SILICON N C H A N N E L M O S TYPE tt-M O S III 2SK2605 HIGH SPEED, HIGH VO LTAGE SW ITCH IN G APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm SW ITCH IN G REGULATOR APPLICATIO NS • Low Drain-Sorce ON Resistance


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    2SK2605 PDF