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Rochester Electronics LLC 2SK2596BXTL-E MOSFET N-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2596BXTL-E	Bulk			158	1 - 10 - 100 - 1000 $1.9 10000 $1.9	Buy Now
Renesas Electronics Corporation 2SK2596BXTL-E 2SK2596 - RF Power Field-Effect Transistor, Ultra High Frequency Band, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SK2596BXTL-E		6,900		1	1 $1.83 10 $1.83 100 $1.72 1000 $1.56 10000 $1.56	Buy Now

2SK2596 Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK2596		Hitachi Semiconductor	Silicon NPN Triple Diffused		Original	PDF
2SK2596		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2596		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2596		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2596		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2596BX		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF
2SK2596BXTL-E		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier		Original	PDF

2SK2596 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2sk2596 Abstract: Hitachi DSA00307 Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.	Original	2SK2596 2sk2596 Hitachi DSA00307	PDF
2SK2596 Abstract: 2SK2596BXTL-E Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596 2SK2596BXTL-E	PDF
2SK2596 Abstract: Hitachi DSA0076 ADE-208-1367 Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1367 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. (f = 836.5MHz) • Compact package capable of surface mounting	Original	2SK2596 ADE-208-1367 2SK2596 Hitachi DSA0076 ADE-208-1367	PDF
Untitled Abstract: No abstract text available Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0200Z Previous ADE-208-1367(Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0200Z ADE-208-1367	PDF
2SK2596 Abstract: Hitachi DSA002781 Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline UPAK 2 1 3 D 4	Original	2SK2596 D-85622 2SK2596 Hitachi DSA002781	PDF
2SK2596 Abstract: 2SK2596BX REJ03G0207-0300 ADE-208-1367 Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 Previous ADE-208-1367(Z Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0300 ADE-208-1367 PLZZ0004CA-A Unit2607 2SK2596 2SK2596BX REJ03G0207-0300	PDF
2SK2596BXTL-E Abstract: No abstract text available Text: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596BXTL-E	PDF
2sk 4207 Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent Text: CONTENTS Index . 5 General Information . 9	Original	D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent	PDF
7054F Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver	Original	2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
hitachi j50 Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent Text: CONTENTS Index . 5 General Information . 9	Original	D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
2SK2596BXTL-E Abstract: 2SK2596 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF

2sk408 Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595 Text: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB	OCR Scan	HA21008 HA22012 HA22022 HA22016 MSP-18 HA21001MS 16dBtyp 1SD1133 2SD1134 2SD1135 2sk408 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595	PDF
2SK series Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series Text: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153	OCR Scan	2SK213. 2SK214. 2SK215. 2SK216. 2SK410. SK2958CS) SK2959. 2SK2980. 2SK series 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series	PDF