2SK2794 Search Results

2SK2794

Abstract: Hitachi DSA002780
Contextual Info: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-465 1st. Edition Features • High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elecro Static Discharge.

Contextual Info: 2SK2794 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI Features • H igh power output, H ig h gain, H ig h e fficie n cy PG = 8.0dB, Pout = 3 ld B m , riD = 60 % m in. f = 8 36.5M H z • Com pact package capable o f surface m ounting Outline RP8P

2SK2794

Abstract: Hitachi DSA00498
Contextual Info: 2SK2794 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-465 Z 1st. Edition September. 1996 Features ¥ High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 60 %min. (f = 836.5MHz) ¥ Compact package capable of surface mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2sk408

Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9