2SK2554
Abstract: Hitachi DSA00108
Text: 2SK2554 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)
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2SK2554
2SK2554
Hitachi DSA00108
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2SK2554
Abstract: DSV80 Hitachi DSA00497
Text: 2SK2554 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate
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2SK2554
D-85622
2SK2554
DSV80
Hitachi DSA00497
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2SK2554
Abstract: Hitachi DSA00238
Text: 2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D
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2SK2554
ADE-208-359
2SK2554
Hitachi DSA00238
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2554 Silicon N-Channel MOS FET ADE-208-359D Z 5th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline
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2SK2554
ADE-208-359D
D-85622
Hitachi DSA00276
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Hitachi DSA002758
Abstract: No abstract text available
Text: 2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline 2SK2554
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2SK2554
ADE-208-359
Hitachi DSA002758
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Hitachi DSA002748
Abstract: No abstract text available
Text: 2SK2554 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate
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2SK2554
D-85622
Hitachi DSA002748
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2SK2554
Abstract: 2SK2554-E PRSS0004ZE-A SC-65
Text: 2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 Previous: ADE-208-359D Rev.6.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance RDS(on) = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
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2SK2554
REJ03G1016-0600
ADE-208-359D)
PRSS0004ZE-A
2SK2554
2SK2554-E
PRSS0004ZE-A
SC-65
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
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HAT2038R/HAT2038RJ
ADE-208-666C
HAT2038R
HAT2038RJ
pdf\7420e
HAT1044M
HAT1053M
2SK3235
2SK3379
Hitachi DSA00276
HAT1040T
2SJ517
2SK1835
TO220CFM
2SK3421
HAT1053
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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2SK2554
Abstract: 2SK2554-E PRSS0004ZE-A SC-65
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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TO220CFM
Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)
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2SK2927*
O-220
2SK2928*
2SK2929*
2SK2930*
2SK2931*
TO220CFM
2SK2554
TO-220CFM
to-3p(i)d series
HAT1020R
HAT1021R
HAT1023R
HAT1024R
HAT1026R
HAT2016R
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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2SJ1334
Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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HA16142P/FP
ADE-504-006
DO-35
DO-41
HA16142P/FP
2SJ1334
2SK3235
HSK81
Hitachi DSAUTAZ006
HA16141
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hitachi j50
Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
hitachi j50
2SK1168
HA16116 "cross reference"
TRANSISTOR MARKING YB 826
ADE-408
GG 84
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2sk1058 2SJ162
2sj177
2SJ182 equivalent
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
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Untitled
Abstract: No abstract text available
Text: 2SK2554 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • R ds „„, • = 4 -5 m il typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline 3. Source
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2SK2554
D-85622
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2SK2829
Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586
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2SK2912
2SK2938
2SK2939
2SK2940
2SK2957
2SK2958
2SJ21S
2SJ217
28K1161
2SK1162
2SK2829
Spl 740
2sk1
2SK2728
28K13
2SK151
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Untitled
Abstract: No abstract text available
Text: 2SK2554 Silicon N-Channel MOS FET HITACHI Application High speed pow er switching Features • • • • Low on-resistarice Rosen, = 4.5 m O typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P I 1 ül 2 m 3 1. Gate
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2SK2554
ADE-208-359
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Untitled
Abstract: No abstract text available
Text: A D E - 2 0 8 - 3 5 9 D Z 2SK2554 Silicon N Channel MOS FET 5th. Edition HITACHI Application High speed power switching Features • Low on-resistance RDS(on) = 4-5 mii typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece
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2SK2554
2SK2554
SC-65
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2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
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2SK1151
2SK1152
2SK1862
2SK1863
2SK1155
2SK1157
2SK1313
2SK1314
2SK1540
2SK1541
2SK975 equivalent
k2796
equivalent transistor 2sk
POWER MOS FET 2sj 2sk
.model 2SK216
TRANSISTOR 2SK 1180
SK1626
2SK215 equivalent
DRUM DRIVER
2sj44
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