Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2526 Search Results

    2SK2526 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2526-01 Fuji Electric N-channel MOS-FET Original PDF
    2SK2526-01 Fuji Electric Power MOSFET Scan PDF
    2SK2526-01 Fuji Electric N-channel MOS-FET Scan PDF

    2SK2526 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2526-01

    Abstract: No abstract text available
    Text: 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2526-01 2SK2526-01

    2SK2526-01

    Abstract: No abstract text available
    Text: 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2526-01 2SK2526-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    Original     		PDF 2SK2526-01

    2SK2696

    Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
    Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack


    Original     		PDF O-220AB O-220F15 Feb-00 2SK2696 2SK951 2SK2397 2SK2527 2SK2528 2SK2100 2SK2696 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    F5022

    Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01


    Original     		PDF 2SK3474-01 2SK3537-01MR 2SK3554-01 2SK3555-01MR 2SK3556-01L, 2SK3535-01 2SK3514-01 2SK3515-01MR 2SK3516-01L, 2SK3517-01 F5022 f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018

    2SK2696

    Abstract: 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-II / FAP-II シリーズ F-II / FAP-II series 高速スイッチング／アバランシェ耐量保証 High speed switching / Avalanche rated 形 式 Device type VDSS ID ID pulse


    Original     		PDF 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2849-01L, 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK2696 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR

    DIODE T25 4 d0

    Abstract: diode t25 4 L0 2SK2526-01
    Text: FU JI 2SK2526-01 N-channel MOS-FET 900V 3,6£2 5A 60W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK2526-01 O-220AB E2367TE DIODE T25 4 d0 diode t25 4 L0

    l0ka

    Abstract: fet 900v
    Text: F U JI S 'U M e u 'lJ t ìU t ì 2SK2526-01 N-channel MOS-FET FAP-II Series 900V 5A 60W > Outline Drawing > Features - 3,6 0 , High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof


    OCR Scan     		PDF 2SK2526-01 l0ka fet 900v

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2526-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Q 60W 5A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		PDF 2SK2526-01

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		PDF 2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		PDF T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


    OCR Scan     		PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01


    OCR Scan     		PDF 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 2SK1007-01

    TO-3P Jedec package outline

    Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
    Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof


    OCR Scan     		PDF 2SK1507-01 SC-67 O-220F15 2SK1081-01 2SK956-01 2SK1385-01R 2SK1548-01 2SK1024-01 O-220 TO-3P Jedec package outline 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVI CE NAME : TYPE.NAME : P o w e r MOSFET 2 S K 2 5 2 6 - 0 1_ . SPEC. No. :- - - Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN N AM E APPROVED Fuji Electric Ca,LM


    OCR Scan     		PDF 0257-R-004a T0-22Q 0257-R-003a Q257-R-003a

    2sk1507

    Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
    Text: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		PDF 2SK2519-01 O-220 2SK2520-01 O-220F15 2SK2521-01 2SK2522-01MR O-220 2SK2469-01MR 2sk1507 TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01

    Untitled

    Abstract: No abstract text available
    Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		PDF 2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R

    2SK2526-01

    Abstract: No abstract text available
    Text: S P E C I F 1CA T 10 N DEVICE NAME : TYPE NAME : SPEC. No. : Power M O S F ET 2 S K 2 5 2 6- 0 1 / Fuji E l e c t r i c Co.,Ltd Tftis Specification is subject to change without notice. D A TE NAME APPROVED F n ii F lA r it r in f V i lt r f CHECKED DWG.N0.


    OCR Scan     		PDF 0257-R-004a 2SK2526-0 T0-220 0257-R-003a 2SK2526-01

    2SK2696-01MR

    Abstract: No abstract text available
    Text: /\°7 -M 0 S F E T /P o w e r MOSFETs J K F-ll / FAP-II > V - X » Ä Voss F-ll / FAP-II series Continued to to {pulse) R b s (on) AftpS. Max. * 1 Ohms iu) Watts 12 36 92 20 20 7 7 10 20 6 20 20 20 2.2 0.74 0.25 1.85 1.85 7.0 7.0 4.5 2.3 8.5 3.6 3.6 3.6


    OCR Scan     		PDF 2SK1008-01 2SK1014-01 2SK1020 2SK2695-01 2SK2696-01MR 2SK951-MR 2SK952 2SK1552-01L, 2SK2397-01MR 2SK957-MR