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    DIODE T25 4 d0

    Abstract: diode t25 4 L0 2SK2526-01
    Text: FU JI 2SK2526-01 N-channel MOS-FET 900V 3,6£2 5A 60W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


    OCR Scan     		2SK2526-01 O-220AB E2367TE DIODE T25 4 d0 diode t25 4 L0 PDF