2SK2165-01
Abstract: No abstract text available
Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2165-01
2SK2165-01
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Untitled
Abstract: No abstract text available
Text: 2SK2165-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications
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2SK2165-01
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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Original
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PDF
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2SK2165-01
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2SK2165-01
Abstract: No abstract text available
Text: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2165-01
2SK2165-01
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30V 20A power p MOSFET
Abstract: 2SK2165-01 SC-65
Text: 2SK2165-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-3P Applications
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2SK2165-01
SC-65
30V 20A power p MOSFET
2SK2165-01
SC-65
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2SK1083-MR
Abstract: 2SK1096-MR 2SK1946-01MR 2SK2018-01L 2SK2098-01MR 2SK2226-01L 2SK2248-01L 2SK2249-01L 2SK2516-01L 2SK2517-01L
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-III / FAP-III シリーズ（Nチャネル） F-III / FAP-III series N channel ロジックレベル駆動／アバランシェ耐量保証 Logic level drive / Avalanche rated 形 式
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2SK2248-01L,
2SK2249-01L,
2SK2516-01L,
2SK1083-MR
2SK2018-01L,
2SK1096-MR
2SK1946-01MR
2SK2517-01L,
2SK2832-01R
2SK2098-01MR
2SK1083-MR
2SK1096-MR
2SK1946-01MR
2SK2018-01L
2SK2098-01MR
2SK2226-01L
2SK2248-01L
2SK2249-01L
2SK2516-01L
2SK2517-01L
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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CQ 419
Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof
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OCR Scan
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2SK2165-01
SC-65
CQ 419
oms 450
ifr mosfet
2SK2165-01
SC-65
2SK2165
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2165-01 N-channel MOS-FET FAP-1IIA Series 60V 0 ,0 3 Q 40A 100W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications - Motor Control
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OCR Scan
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PDF
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2SK2165-01
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2SK1815
Abstract: 2SK1388
Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)
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2SK1822-01M
2SK2165-01
2SK2166-01
2SK2259-01M
2SK1823-01
2SK1969-01
O220F15
0220F
T0220F15
T03PF
2SK1815
2SK1388
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AE 1600-S
Abstract: No abstract text available
Text: 2SK2165-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R IE S • Features ■ Outline Drawings • Hie|h current • Low on-resistance • No secondary breakdown • Low driving power • Hitjh forward Transconductance • Avulanche-proof
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OCR Scan
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2SK2165-01
AE 1600-S
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ci 740
Abstract: K1279 TO-220F15 K1969 2SK1822-01MR 2SK1823-01R 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK2687-01
Text: <s MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R ds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type Maximum Ratinas Pd (W) V dss (V) Id (A) 2SK1822-01MR 2SK2165-01 2SK2166-01R 2SK2259-01MR 2ÖK1823-01R
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2SK1822-01MR
O-220F15
2SK2165-01
2SK2166-01R
2SK2259-01MR
2SK1823-01R
K1969-01
2SK1818MR
ci 740
K1279
TO-220F15
K1969
2SK2687-01
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R d s ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Maximum Ratinas I d (A ) Pd (W) Device Type Characteristics (Max.1 V dss (V ) 2SK1822-01 MR 2SK2165-01 2SK2166-01R
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2SK1822-01
2SK2165-01
2SK2166-01R
2SK225Ã
-01MR
2SK1823-01R
2SK1969-01
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Untitled
Abstract: No abstract text available
Text: a /\°7 -MOSFET / Power MOSFETs FAP-IIIA '> 'J ~ X FAP-IIIA series iS iS Ä rH m • 1&J- m j Device type High surge ruggedness Voss to pulse * ’ Rds Amps. Volts ms 20 80 0.07 35 ±20 1.5 TO-220F15 60 40 160 0.03 40 ±20 1.5 TO-220F15 2.3 60 40 160 0.03
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O-220F15
2SK1822-01
2SK2259-01MR
2SK2165-01
2SK2166-01R
2SK1969-01
2SK1823-01R
F8006N
F7007N
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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LS 2025
Abstract: No abstract text available
Text: <§ MOSFETs F-lll Series - Logic Level Operation, Low R d s ON 3 0 - 1 5 0 Volts Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR 2SK2446 L.S 2SK2050
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OCR Scan
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2SK1505MR
2SK2048L
2SK1388
2SK1083MR
2SK1096MR
2SK1086MR
2SK1881L
2SK1387MR
2SK1089
2SK1508
LS 2025
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