se024
Abstract: diode b32 b32 diode
Text: COLLHER SEMICONDUCTOR I NC 4flE 223A7T2 » D0017M2 SE024 o .95 A 'T o 'V - w Outline Drawings SCHOTTKY BARRIER DIODE • Features m Surface m ount device • Low VF • Super high speed switching. • 6 bT « C O L Connection Diagram High reliability by planer design.
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223A7T2
D0017M2
SE024
500ns
D001743
22367R2
D0G1744
diode b32
b32 diode
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te 1819
Abstract: 2SK1819-01M
Text: 2SK1819-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET • Features ■ O u tlin e Drawings • Include fast recovery diode • High voltage • Low driving power • Avalanche-proof ■ Applications Gate • M otor controllers
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2SK1819-01M
SC-67
223A7T2
A2-252
te 1819
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000M5
Abstract: 2SC4538
Text: Ratings and Characteristics of 2 1. Out 1ine Drawings T0-3PF 2. Absolute Maximum Ratings S 4 5 3 Fuji Power Transistor 8 F ? Tc=25°C Symbol item Maximum Rating Collector-Base Voltage Vceo 9 0 0 Collector-Emitter Voltage V ceo 8 0 0 Emitter-Base Voltage
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Co11ecto
0257-R-003a
2SC4558R
253A7TE
000M5
2SC4538
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000M403
Abstract: No abstract text available
Text: • 22307^2 - — 0004401 I 27b ■ , - SPECI FI CATI ON DEVICE NAME TYPE NAME : SPEC. No. : MS 5 F 3 5 1 i DATE : Jun. -25-1996 1M B H 1 5 D - 1 2 0 Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. D A TE DRAWN NAME
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10-PuI
0QD4412
MS5F3514
000M403
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DIODE BZ
Abstract: No abstract text available
Text: •I 22307^2 □002m,G TET « C O L This Material Copyrighted By Its Respective Manufacturer 1 Eq u ivalent C ir c u it of Module Absolute Maxi huh Ratings 3. Tj =25 TC Ï tenis Syssbol s ~ CL .3 if § là ■ Units V CES 6 0 0 V Gate -em itter voltag e
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0002m
50A//ZS
DIODE BZ
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QQG441A
Abstract: DDD4421
Text: S P E C 1 F 1 C A T 10 N DEVICE NAME : TYPE NAME : SPEC. Mo. • MS 5 F 3 5 3 1 DATE • Jun. -25-1996 1G B T 1 M B H 2 5 - 1 20 Fuji DATE CH£CK£D E l e c t r i c Co.Ltd. This Specification is subject to change without not ice. NAME APP RO VE D Fuji Electric Ca,Lid.
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199fi
00G4H13
H04-004-0T
20-5mÂ
MS5F3531
H04-004-03
DDD4421
MS5F3531
223fl7T2
G00M422
QQG441A
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Untitled
Abstract: No abstract text available
Text: 25307^2 Ratings TET «CO L and characteristics □ OOSm.G of Fuji I GBT M B T Module 2 . Equivalent Circuit of Module 3 . Equivalent Ci rcui t -r4CO -OE ~ \/z -D Current Control Ci rcui t ó 4 . Absolute Maxima Ratings ( Tj =25 *C) Items This material and the information herein ¡s the property of
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8MBI50J-060
6x50A
5F5062
50A//ZS
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mosfet 2sk
Abstract: No abstract text available
Text: 2SK1217-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary b reakd ow n • Low driving p ow er • High voltage • V GSs = ± 3 0 V G uarantee
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2SK1217-01
223A7T2
0D03017
mosfet 2sk
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Untitled
Abstract: No abstract text available
Text: 1N4933 Thru 1N4937 1 AMP FAST RECOVERY RECTIFIER • FEATURES • • • • • • Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, chlorothene and similar solvents • UL recognized 94V-0 plastic material
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1N4933
1N4937
DO-41
MIL-STD-202,
1N4933
1N4934
1N4935
1N4936
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t125 switch
Abstract: 251C 600Y cartel
Text: This matenai and ihe Infoi rvvaik>n herein is the pioperty o í Fu|>Elecmc Co Lid They shatl bo neither reproduced, copied lent. o' disclosed In any way whatsoever or «he use ol arty ihWdpar ry.oor used for the manufacturing purposes w ith o u t the e«press written consent of Fuji Electric Co., Ltd.
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ESAC92-03
Abstract: T0220AB esac92
Text: ESAC92-03 ioa k LOW LOSS SUPER HIGH SPEED RECTIFIER • 4# ^ : F e a tu re s • f tV F Low V F • S '- ' S up er hig h speed s w itc h in g . ■ V lfi& ffi C o n n e c tio n D ia g ra m • 7V — H igh reliability by pla n e r d e sig n . : A p p lic a tio n s
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ESAC92-03
T0220AB
SC-46
esac92
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7MBP200RA060
Abstract: TT160
Text: 7MBP200RA060 IGBT-IPM R series I 600V / 200A 7 in one-package Features • Temperature protection provided by directly detecting the unction temperature of the IGBTs •Low power loss and soft switching ■High performance and high reliability IGBT with overheating protection
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7MBP200RA060
7MBP200RA060
TT160
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6mbp75ra060
Abstract: IGBT FF 300 MTT 95 A 12 N KAE x1 MTT 65 A 12 N 300V power amplifier JT-100
Text: O U U V /Z O A /O in one-package I G B T - I P M M • *8 R s e r i e s 6MBP75RA060 Features • f e m & t 'j- y • IP M -N '> V- X t 5 & 1 4 0 & -3 A- > >r - v • I G B T * 7 7<D Tj t t U a S f t f t K t t f f i C : J: 5 « • rt $ iJ ® [U K W g S o aQ^ S W * i | i i ^ j ^ l c i
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6MBP75RA060
Vet-15V
DQD5S77
6mbp75ra060
IGBT FF 300
MTT 95 A 12 N
KAE x1
MTT 65 A 12 N
300V power amplifier
JT-100
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cf 005
Abstract: No abstract text available
Text: •i 22307^2 □002m,G TET « C O L Powered by ICminer.com Electronic-Library Service CopyRight 2003 1 Equivalent C i r cu it o f Module Absolute Maxi huh Ratings 3. Tj =25 TC Ï tenis Syssbol s ~ CL § là Ratings 6 0 0 V Gate - e m i t t e r v o l t a g e
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50A//ZS
cf 005
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MB12-140
Abstract: dm445 1009C
Text: FUJI 1GBT S P E C I F I C A T I O N TYPE NAME : ¿MB12-140 1. Absolute maximum ratings Tc=25‘C Items Symbols maximum ratings Unit VcE 1400 V Gate-Eraitter Voltag e V ge V Continuos 1c 12 A Pulse-50/fS I CP 60 A Power Dissipation +1 C ollector Current
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MB12-140
Pulse-50/fS
DM445
MB12-140
1009C
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5503 MOSFET
Abstract: 2SK2052 A2292
Text: 2SK2052 S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - V SER IE S • Outline Drawings ■ Features • Include fast recovery diode • High voltage • Low driving p o w e r ■ Applications • M o to r controllers • Inverters
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2SK2052
20Ki2)
A2-292
5503 MOSFET
2SK2052
A2292
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A1W 73
Abstract: A1W diode 7MBR10NF120 ISA S20 AC2500 INV200
Text: JU & & & - a a x ^ y f > ^ r N > > » j - X 7MBR10IMF120 j 1200V/10A/PIM • 41# : F e a tu re s '/f V? •^ E E R l High Speed Switching Voltage Drive it Low Inductance Module Structure K ^ U 'v i? • S ' V ■*-* • y ^ 7 ' L ' - + | s | i 6 ^ * # q Converter Diode Bridge Dynamic Brake Circuit
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Xl7MBR10IMF120
200V/10A/PIM
223A7T2
7MBR10NF120
A1W 73
A1W diode
7MBR10NF120
ISA S20
AC2500
INV200
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7MBR25SA120 05
Abstract: IGBT 7MBR25SA120 25A 7MBR25SA120 MS6M 144102 es 3305 J 3305 600Y XF MR 50hz
Text: j. SPECIFICATION D ev ic e Name Power 7MBR25SA120 This material end ih* Information herein il the ptopenv òf Fuji Electnc Co.lld.They shall be neither «produced, copied lent, or disclosed in any way whatsoever for ihe use of any third party.nor used for the manufacturing purposes without
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