2SK1553-01MR
Abstract: No abstract text available
Text: 2SK1553-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters
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Original
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2SK1553-01MR
O-220F15
SC-67
2SK1553-01MR
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PDF
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2sk1553
Abstract: No abstract text available
Text: 2SK1553-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- I SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage TO-220F15 Applications Switching regulators UPS DC-DC converters
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Original
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2SK1553-01MR
O-220F15
SC-67
2sk1553
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PDF
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2SK1553-01
Abstract: 2sk1553
Text: 2SK1553-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -F - I S E R I E S • Features Outline Drawings • Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power
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OCR Scan
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2SK1553-01
Tc-25Â
SC-67
fliil11Â
2sk1553
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PDF
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2SK1553-01M
Abstract: schematic symbols UPS
Text: 2SK1553-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features ^ g £ p | £ g Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage
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OCR Scan
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2SK1553-01M
SC-67
A2-235
schematic symbols UPS
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1553-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■ Applications
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OCR Scan
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2SK1553-01M
S--650V
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PDF
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1848T
Abstract: No abstract text available
Text: 2SK1553-01 MR FUJI POWER M OS-FET N- CHANNE L SI LI CON P O W E R MOS - F E T _ T Ä — k - F - I S E R I E S • Features Outline Drawings • Hit|h speed sw itching • L o w on-resistance • No second ary breakdow n
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OCR Scan
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2SK1553-01
1848T
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PDF
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2SK1553-01
Abstract: T151 MOSFET 20 NE 50 Z 2SK1553
Text: 2SK1553-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features Outline Drawings • Hitjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi |h voltage • Avialanche-proof ■ Applications
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OCR Scan
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2SK1553-01
SC-67
L40T-<
T151
MOSFET 20 NE 50 Z
2SK1553
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PDF
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T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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OCR Scan
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1084
2SK1388
2MI200F-025
2sk1018
2SK1390
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PDF
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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OCR Scan
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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PDF
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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PDF
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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OCR Scan
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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PDF
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2SK056
Abstract: No abstract text available
Text: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000
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OCR Scan
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK950
2SK724
2SK725
2SK899
2SK897M
2SK056
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PDF
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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OCR Scan
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001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
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PDF
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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OCR Scan
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2SK905
2SK906
2SK900
T0220
2SK947M
T0220F15
2SK901
2SK1549
T03PF
2SK902
2SK2079-01M
2SK2079
2SK2001-01M
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PDF
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2SK2079
Abstract: 2SK2079-01M
Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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OCR Scan
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2SK2079
2SK2079-01M
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PDF
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2SK1212
Abstract: 2sk904 replacement
Text: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas
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OCR Scan
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2SK905
2SK906
2SK900
2SK947MR
2SK901
2SK1549R
2SK902
2SK949MR
2SK950
2SK724
2SK1212
2sk904 replacement
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PDF
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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OCR Scan
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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PDF
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90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
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OCR Scan
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FAP-11
T03PF
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
2SK1024-01
90T03P
2SK956
10002
2SK906A
2SK1082
t009
2SK1388
2SK1661
2SK900
FUJI Semiconductors
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PDF
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2SK725
Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)
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OCR Scan
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2SK905
2SK906
2SK900
T0-220
2SK947MR
T0-220F15
2SK901
2SK1549R
K949MR
O-220F15
2SK725
2sk899
2SK960
90-340
K949
2SK903MR
k902
k952
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PDF
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T03P
Abstract: 2SK101
Text: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723
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OCR Scan
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00D1A70
2SK1134
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
2SK948
T03P
2SK101
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PDF
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sk1212
Abstract: 2SK1549R 2SK724 2SK900 2SK901 2SK905 2SK906 2SK947MR 2SK950
Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Miiximum Ralinas Device Type V dss (V) 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1540ft 2ÔK902 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2'3K055 2SK960MR
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OCR Scan
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2SK905
2SK906
2SK900
T0-220
2SK947MR
T0-220F15
2SK901
2SK1549R
K949MR
O-220F15
sk1212
2SK724
2SK950
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PDF
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523a1
Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time
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OCR Scan
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001SS7
25-35kgÂ
523a1
2SK955
2SK956-01 equivalent
2SK956
2sk1018
2sk956 equivalent
2sk1144
2SK1388
2sk725 equivalent
2SK900
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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PDF
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k1507
Abstract: K1507 MOSFET 90T03P 2SK1081 2SK1276 2SK1821 2SK1388 2SK1661 90.T03P 2SK1084
Text: FUJI [ITLilC&irOgDE COLLHER SEMICONDUCTOR INC MAE » 55367^5 GGQ1Ô02 DbM • C O L Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS on VGS + /- 30V Reduced turn off time High avalanche ruggedness VGS + /- 30V, Reduced turn off time Logic level operation, low
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OCR Scan
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T03PF
2SK1081
2SK956-01
2SK1385-01
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
k1507
K1507 MOSFET
90T03P
2SK1276
2SK1821
2SK1388
2SK1661
90.T03P
2SK1084
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PDF
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