2SK1518
Abstract: 2SK1518 equivalent 2SK1517 Hitachi DSA00334
Text: 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter
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2SK1517,
2SK1518
2SK1517
2SK1518
2SK1518 equivalent
2SK1517
Hitachi DSA00334
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2sk1518
Abstract: Hitachi DSA002748
Text: 2SK1517, 2SK1518 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter
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2SK1517,
2SK1518
2SK1517
2SK1518
D-85622
Hitachi DSA002748
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Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter
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2SK1517,
2SK1518
2SK1517
2SK1518
Hitachi DSA00279
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2SK1518
Abstract: 2SK1518-E 2SK1517 2SK1517-E PRSS0004ZE-A SC-65 2sk1518e
Text: 2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 Previous: ADE-208-1287 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns)
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2SK1517,
2SK1518
REJ03G0947-0200
ADE-208-1287)
PRSS0004ZE-A
2SK1517
2SK1518
2SK1518-E
2SK1517
2SK1517-E
PRSS0004ZE-A
SC-65
2sk1518e
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2SK1518 circuit
Abstract: 2SK1517 Hitachi DSA002779
Text: 2SK1517, 2SK1518 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode trr = 120 ns Suitable for motor control, switching regulator, DC-DC converter
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2SK1517,
2SK1518
2SK1517
2SK1518
30ica,
D-85622
2SK1518 circuit
Hitachi DSA002779
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2SK1518 equivalent
Abstract: 2SK151 2sk1518 2SK1517 DSA003639 2SK1518 circuit
Text: 2SK1517, 2SK1518 Silicon N-Channel MOS FET ADE-208-1287 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter
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2SK1517,
2SK1518
ADE-208-1287
2SK1517
2SK1518 equivalent
2SK151
2sk1518
2SK1517
DSA003639
2SK1518 circuit
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2SK1517
Abstract: 2SK1518
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SK1518-E
Abstract: 2SK1517 2SK1517-E 2SK1518 PRSS0004ZE-A SC-65
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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hitachi mosfet audio
Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Text: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole
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O-220
HAF2001
500pcsxN)
O-92MOD
O-126MOD
O-126FM
O-220AB
O-220FM
O-220C
SP-10
hitachi mosfet audio
D4L DIODE
2SK2830
2SK2225
2SJ214LS
2SK1919LS
2sk2829
Hitachi MOSFET
2SK1058
transistors 2SK1317
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
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HAT2038R/HAT2038RJ
ADE-208-666C
HAT2038R
HAT2038RJ
pdf\7420e
HAT1044M
HAT1053M
2SK3235
2SK3379
Hitachi DSA00276
HAT1040T
2SJ517
2SK1835
TO220CFM
2SK3421
HAT1053
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2sk135 application note
Abstract: 2sk1058 equivalent k176 2SK2265 2sk135 audio application 2SC1343 2SK186 2sk135 application 2SK135 audio amplifier 2SK317
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ27G0017-0200/Rev
2sk135 application note
2sk1058 equivalent
k176
2SK2265
2sk135 audio application
2SC1343
2SK186
2sk135 application
2SK135 audio amplifier
2SK317
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TO220CFM
Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D
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HAT1024R
ADE-208-476G
pdf\7420e
HAT1044M
HAT1053M
HAT2053M
HAT2054M
TO220CFM
TO220FM
2sk3148
2SK2978
hat2070
TO-220aB rr
Hitachi DSA00276
2SK2096
HAT1040T
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hitachi j50
Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
hitachi j50
2SK1168
HA16116 "cross reference"
TRANSISTOR MARKING YB 826
ADE-408
GG 84
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2sk1058 2SJ162
2sj177
2SJ182 equivalent
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2sk1518
Abstract: 2SK1518 circuit
Text: 2SK1517,2SK1518 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itch in g Features • L ow on-resistanee • H igh speed sw itch in g • L ow drive current • B uilt-in fast recovery d iod e t^ = 120 ns • Suitable for m otor control, sw itch in g regulator, D C -D C converter
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2SK1517
2SK1518
2SK1517,
2SK1518
2SK1518 circuit
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2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
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2SK1151
2SK1152
2SK1862
2SK1863
2SK1155
2SK1157
2SK1313
2SK1314
2SK1540
2SK1541
2SK975 equivalent
k2796
equivalent transistor 2sk
POWER MOS FET 2sj 2sk
.model 2SK216
TRANSISTOR 2SK 1180
SK1626
2SK215 equivalent
DRUM DRIVER
2sj44
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2SK1778
Abstract: 2SK1776 2SJ235 2SJ175 2SJ176 2SJ182 2SJ236 2SJ237 2SK1093 2SK1094
Text: HITACHI 12 DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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2SK2225 equivalent
Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}
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2SK1151
2SK1152
2SK1862
2SK1863
2SK1155
2SK1156
2SK1313
2SK1314
2SK1540
2SK1541
2SK2225 equivalent
2SK1762 equivalent
2sk2221 equivalent
C2373
2SK215 equivalent
2SJ182 equivalent
2SK1317 equivalent
2SK1336 equivalent
2SK975 equivalent
2sk1058 equivalent
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SK109
2SJ236
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK1778
Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2SK1776
2SJ299
2SJ175
2SJ176
2SJ182
2SJ237
2SK1093
2SK1094
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2sj177
pf0030 hitachi
2SJ299
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
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2sj2 high voltage p channel mosfet
Abstract: 2sj2 high voltage mosfet 2SK1778 2SJ182 2SJ299 2SK1204 2SK1763 2SJ175 2SK1665 2SK1776
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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Diode DII
Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
Text: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS
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2sk1058 equivalent
Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
Text: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS
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