EN3572

Abstract: 2SK1434
Contextual Info: O rdering n u m b e r:E N 3 5 7 2 2SK1434 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s a t Ta = 25°C Drain to Source Voltage

Contextual Info: 2SK1434 2056 AP A d va n ce d P e rfo rm a n c e Series V DSS= 1 0 0 V N Channel Power M O SFET F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute M axim um R atings atTa=25°C Drain to Source Voltage Vdss Gate to Source Voltage

2SK1434

Abstract: EN3572
Contextual Info: Ordering number : EN3572 SANYO Semiconductors DATA SHEET 2SK1434 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. Specifications Absolute Maximum Ratings at Ta = 25°C

EN3572

Abstract: 2SK1434
Contextual Info: Ordering number:EN3572 N-Channel Silicon MOSFET 2SK1434 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2056A [2SK1434] 15.6 14.0 3.2 2.0 1.3 1.2 15.0 20.0

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK1411

Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Contextual Info: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2

SANYO Replacement list

Abstract: 2SK1885 2sk3615 2SC6082 2SK3706 2SK2432 2SA2098 2sc6082 Replacement 2SK3747 2SC4108
Contextual Info: Ordering number : E I 0 0 6 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.

Contextual Info: • AP Series Lineup J-ll Series Existing type V qss = 60V, N-channei Absolute maximum ratings atTa =25°C Type No. Package voss Po* Vqss (V) 2SK1871 Electrical characteristics atTa = 25°C W (W) 15 Vq s (oH) nun to max %6<9R) typftnaxat V e s s H JV W iw*

K1412

Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Contextual Info: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP

13FLP

Abstract: sj22 serie 2sk
Contextual Info: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6

2sj403

Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
Contextual Info: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2SK2632

Abstract: 2SK1420 2SK2142 2sk1423 2SK1416 2SK1417 2SK1884 2SK1885 2SK2404 2SK2405
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta • 25 TC |Yfsf @VDS • ID RDS(on)@lD ■Vgs M W ID (A) 5.0 VOSS PD (W) Tdi cc) VGKWf) (V) 150 2.0 to 3.0 2SK2404 SMP-FD Ultrahigh-speed switching, motor