EN-3567
Abstract: K 3567 2SK1429
Text: Ordering number:EN3567 N-Channel Silicon MOSFET 2SK1429 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2052C [2SK1429] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3
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EN3567
2SK1429
2052C
2SK1429]
SC-46
O-220AB
EN-3567
K 3567
2SK1429
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EN-3567
Abstract: 2SK1429 K 3567
Text: Ordering number:EN3567 N-Channel Silicon MOSFET 2SK1429 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2052C [2SK1429] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3
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EN3567
2SK1429
2052C
2SK1429]
SC-46
O-220AB
EN-3567
2SK1429
K 3567
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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TO-220ML
Abstract: 2SK3702 2SJ655 2SK3706 2SJ651 220ML to220ml 2SK3707 2SJ650 2SJ653
Text: Ordering number : ENN7623 Power MOSFET for 60V/100V Large-signal Power MOSFET for 60V/100V Motor Drivers The Power MOSFET new series products are large-signal, medium-voltage Power MOSFETs optimized for DC/DC converters and motor drives with a DC input of 12V to 48V. Taking the form of a full-mold TO-220 TO-220ML , the
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ENN7623
0V/100V
0V/100V
O-220
O-220ML)
TO-220ML
2SK3702
2SJ655
2SK3706
2SJ651
220ML
to220ml
2SK3707
2SJ650
2SJ653
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ST K 3567
Abstract: K 3567
Text: 2SK1429 AP A d va n c e d P e rfo rm a n ce Series V DSS= 1 0 0 V N Channel Power M OSFET •£■3567 Features • Low ON-state resistance. • Very high-speed switching. • Converters. Absolute Maximum Ratings at Ta = 25°C unit Drain to Source Voltage
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2SK1429
2052B
O-220A3
SC-46
7151JN
X-6618
ST K 3567
K 3567
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2052B
Abstract: EN-3567 2SK1429
Text: O rd e rin g n u m b e r: E N 3 5 6 7 2SK1429 No.3567 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON-state resistance. • Very high-speed switching. •Converters. A bsolute M axim um R atin g s a t Ta = 25°C D rain to Source Voltage
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EN3567
2SK1429
2052B
EN-3567
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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2SK1925
Abstract: No abstract text available
Text: Continued from previous page II Device Applications Voss m I Vg ss I m 1 2SK1737 2SK1738 to P|j A W (°C| Tell V g S(oH) w m RDSfon) @ Id •Vos SDSfon) max (a) to r I vgs I W « vos *to Vos (S) 00 ¡0 : <*> FLP Very high-speed switch 100 ±15 1.8 1.5
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2SK1737
2SK1738
T0220
2SK1921*
2SK2142*
2SJ254
0220M
2SK1925
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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2SJ32C
Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK19
2SK1923
T0-220
2SK1924
2SK2043LS
2SK2044LS
O-220FI
2SK2045LS
2SK19;
2SK1922
2SJ32C
2SK14
2SK2142
2sj320
2sj306
2SK142
2SK195
2SK2161
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2SK1411
Abstract: 2SK1410 2SK1415 2SK1409 2SK1408 2sk1413 180n 2SK1407 2SK141 2SK1420
Text: - 102 - f m s ffl £ & m S fr A * * 1 K V * « Se V* (V) frt I* X P d /P c h (A) & * (W) Igss (max) (A) Vg s (V) (Ta=25'C) (min) (max) Vd s (V) (V) (V) 9m (min) Vd s (S) (t$ } (V) Id (A) Id (A) 250 n 500 2 3 10 Im 9 14 10 8 100 ¿i 400 1 5 25 Im 7.2
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2SK1405
2SK1406
2SK1407
2SK1408
2SK1409
700ns.
1250nstyp
2SK1426
140nstyp
2SK1427
2SK1411
2SK1410
2SK1415
2sk1413
180n
2SK141
2SK1420
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Untitled
Abstract: No abstract text available
Text: • AP Series Lineup J-ll Series Existing type V qss = 60V, N-channei Absolute maximum ratings atTa =25°C Type No. Package voss Po* Vqss (V) 2SK1871 Electrical characteristics atTa = 25°C W (W) 15 Vq s (oH) nun to max %6<9R) typftnaxat V e s s H JV W iw*
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2SK1871
2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1422
2SK1423
2SK1424
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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2sj403
Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
Text: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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chan12/0
2SK2010
2SK2011
2SK2012
2SK2108
2SK2058
2SK2058
O-220
T0-220ML
H707b
2sj403
2sk2532
2SJ406
2SJ28
mosfet 4800
2sk2680
2SK2161
2SK1427
2SK1428
2SK1430
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