2SK1382 Search Results

2SK1382 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK1382	Toshiba	TRANS MOSFET N-CH 100V 60A 3(2-21F1B)	Original	PDF
2SK1382	Toshiba		Original	PDF
2SK1382	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK1382	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK1382	Unknown	FET Data Book	Scan	PDF
2SK1382	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1382	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK1382	Toshiba	Silicon N channel field effect transistor for high speed switching applications, relay drive and motor drive applications, DC-DC converter applications	Scan	PDF
2SK1382	Toshiba	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(LL-pi-MOSIII)	Scan	PDF
2SK1382(Q)	Toshiba	2SK1382 - MOSFET N-CH 100V 60A TO-3PL	Original	PDF

2SK1382 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance	Original	2SK1382 2-21F1B	PDF
2SK1382 Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance	Original	2SK1382 25transportation 2SK1382	PDF
Untitled Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance	Original	2SK1382	PDF
2SK1382 Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance	Original	2SK1382 2SK1382	PDF
2SK1382 Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance	Original	2SK1382 2SK1382	PDF
Untitled Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance	Original	2SK1382	PDF
2SK1382 Abstract: No abstract text available Text: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance	Original	2SK1382 2SK1382	PDF
2SK1382 Abstract: No abstract text available Text: 2SK1382 東芝電界効果トランジスタ 2 シリコンNチャネルMOS形 L −π−MOSⅢ 2SK1382 ○ DC−DC コンバータ用 ○ モータドライブ用単位: mm z 4V 駆動です。 z オン抵抗が低い。 : RDS (ON) = 15 mΩ (標準) z 順方向伝達アドミタンスが高い。	Original	2SK1382 2-21F1B 2002/95/EC) 2SK1382	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Text: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03	PDF

GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive	OCR Scan	2SK1382 15mil 20kil)	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7T-M0SIII 2S K 1 3 8 2 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS U nit in mm 4-Volt Gate Drive	OCR Scan	2SK1382 --15mil l\/11 20kfl)	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK1382 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S TYPE L2-7t-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • U n it in mm	OCR Scan	2SK1382 20kil)	PDF
transistor marking 47s Abstract: 2SK1382 60AS D100N TC320 Text: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance : \|Yfs \| = 47S (Typ.)	OCR Scan	2SK1382 -15mO transistor marking 47s 2SK1382 60AS D100N TC320	PDF
2SK1383 Abstract: 2SK1380 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1382 2SK1384 Text: - 100 - m % ± £ & m ft it f € t ? K Ü A V fé Ê V* I* * ft * (V) (A) 5 X ft P d /P ch <K) Igss (max) (A) Vg s (V) m M Id s (min) (max) Vd s (A) (A) (V) (Ta=25cC) 'te (min) (max) Vd s (V) (V) (V) £m (min) (typ) Vd s (S) (S) (V) Id (A) Id (A)	OCR Scan	2SK1379 2SK1380 2SK1381 2SK1382 2SK1383 100nstyp 2SK1400 2SK1400A 155nstyp 2SK1383 IM 337 2SK1379 2SK1388 IM617 2SK1381 2SK1390 2SK1384	PDF
Untitled Abstract: No abstract text available Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm INDUSTRIAL APPLIC ATIONS H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . Uni t R E L A Y D R IV E ,M O T O R DR IVE AND DC-DC CONVER TER A P P L I C A T I O N S . in mm	OCR Scan	15mfi D-30A	PDF
2SK1649 Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941 Text: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD	OCR Scan	2SK1078 2SK940 2SK1112 2SJ183 2SK1114 2SK1344 2SK1768 2SK1115 2SK1345 2SK942 2SK1649 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941	PDF
j2y transistor Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497 Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,	OCR Scan	O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497	PDF

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2SK1382 Search Results

2SK1382 Datasheets (10)

2SK1382 Datasheets Context Search

Untitled

2SK1382

Untitled

2SK1382

2SK1382

Untitled

2SK1382

2SK1382

5252 F 1009 4-pin

2SK2056

2SK3567 equivalent

2SK3878 equivalent

IGBT GT30F124

2SK4207

GT30F124

transistor bc 245

Untitled

Untitled

Untitled

transistor marking 47s

2SK1383

Untitled

2SK1649

j2y transistor