2SK1085-M
Abstract: No abstract text available
Text: 2SK1085-M N-channel MOS-FET F-III Series 150V > Features - 0,9Ω 3A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
|
Original
|
2SK1085-M
2SK1085-M
|
PDF
|
2SK1085-MR
Abstract: 2SK1085MR 2SK1085
Text: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
|
Original
|
2SK1085-MR
O-220F15
SC-67
2SK1085-MR
2SK1085MR
2SK1085
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
|
Original
|
2SK1085-MR
O-220F15
SC-67
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK1085-M N-channel MOS-FET F-III Series 150V > Features - 0,9Ω 3A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
|
Original
|
2SK1085-M
|
PDF
|
2sk2774
Abstract: TO220F15 2SK3271 2sk2251 to 220f15 TO-220F15 2sk1818 2sk2954 2SK2255 2sk2098
Text: VDSS 100 to 250 volts Series Package Drain-source voltage VDSS Voltage 100 F-I series TO-3P F-II series T-Pack FAP-II series TO-220AB 120 150 200 250 2SK2753(50,0.032) 2SK2849(18,0.18) 2SK2519(10,0.4) 2SK2521(18,0.18) 2SK2520(10,0.4) 2SK2522(18,0.18) TO-220F15
|
Original
|
O-220AB
2SK2753
2SK2849
2SK2519
2SK2521
2SK2520
2SK2522
O-220F15
2SK2250
2SK2292
2sk2774
TO220F15
2SK3271
2sk2251
to 220f15
TO-220F15
2sk1818
2sk2954
2SK2255
2sk2098
|
PDF
|
2SK 129 A
Abstract: 1085 MR A2129 2SK1085-MR A2128
Text: 2SK1085-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S • Features • Hicjh current • Low on-resistance • No secondary breakdown • Low driving power • Hich forward Transconductance ■Aoplications • Me tor controllers
|
OCR Scan
|
2SK1085-MR
SC-67
Tc-25Â
2SK 129 A
1085 MR
A2129
A2128
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK1085-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SE R IE S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■A pplications
|
OCR Scan
|
2SK1085-M
1085-M
|
PDF
|
A2127
Abstract: 1111111111I
Text: 2SK1085-M R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F-III S E R IE S • Outline Drawings ■ Features • Hicjh current • Low on-resistance • No secondary breakdown • Low driving power • Hicih forward Transconductance ■Aoplications
|
OCR Scan
|
2SK1085-M
A2127
1111111111I
|
PDF
|
T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
|
OCR Scan
|
2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1084
2SK1388
2MI200F-025
2sk1018
2SK1390
|
PDF
|
2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
|
OCR Scan
|
001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
|
PDF
|
2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
|
OCR Scan
|
T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
|
PDF
|
6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
|
OCR Scan
|
1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR
|
OCR Scan
|
2SK1505MR
2SK2048L
2SK1388
2SK1083MR
2SK1096MR
2SK1389
2SK1390R
2SK2049
2SK1087MR
2SK1817MR
|
PDF
|
2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
|
OCR Scan
|
001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
|
PDF
|
|
|
2SK962
Abstract: T03P 2MI200F-025
Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)
|
OCR Scan
|
2SK1082
2SK962
2SK1217
2SK1512
2SK1511
T03PF
2SK1008-01
2SK1010-01
2SK1012-01
2SK1014-01
T03P
2MI200F-025
|
PDF
|
2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
|
OCR Scan
|
F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
|
PDF
|
TO-220F15
Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049
|
OCR Scan
|
2SK1505MR
O-220F15
2SK2048L
2SK1388
O-220
2SK1083MR
2SK1096MR
2SK1086MR
TO-220F15
2630
2SK2248-01L
2SK1387MR
2SK1508
|
PDF
|
90T03P
Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Text: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn
|
OCR Scan
|
FAP-11
T03PF
2SK957-01
T0220F
2SK958-01
T0220
2SK959-01
2SK1548-01
2SK1024-01
90T03P
2SK956
10002
2SK906A
2SK1082
t009
2SK1388
2SK1661
2SK900
FUJI Semiconductors
|
PDF
|
2SK1815
Abstract: 2SK1388
Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)
|
OCR Scan
|
2SK1822-01M
2SK2165-01
2SK2166-01
2SK2259-01M
2SK1823-01
2SK1969-01
O220F15
0220F
T0220F15
T03PF
2SK1815
2SK1388
|
PDF
|
2SK2446-01L
Abstract: 2SK1089
Text: /\°7 -MOSFET / Power MOSFETs J U | F-lll / FAP-lll '> V - X P v -y 0 m N F - l l l > v x H J t^ S E / FAP-lll series ( N channel Logic level drive / A vara rtch e rated Id (putee) Amps, Amps. Volts Vofts 30 10 40 0.06 20 ±16 30 10 40 0.06 35 ±16 T-pack
|
OCR Scan
|
2SK2248-01L,
2SK2249-01L,
2SK1505-MR
2SK2048-L,
2SK2516-01L,
2SK1083-MR
2SK2018-01L,
2SK1096-MR
2SK1881-L,
2SK1086-MR
2SK2446-01L
2SK1089
|
PDF
|
2SK1073
Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
Text: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)
|
OCR Scan
|
2sk1069
2sk1070
2sk1073
2SK1074
2sk1078
130nstyp
2SK1096
120nstyp
VDD-30V
2SK1097
2SK1073
lm815
LM8002
2SK1078
2SK1079
2SK1082
2SK1092
2SK1084
2SK1100
|
PDF
|
523a1
Abstract: 2SK955 2SK956-01 equivalent 2SK956 2sk1018 2sk956 equivalent 2sk1144 2SK1388 2sk725 equivalent 2SK900
Text: COLLMER SEMICONDUCTOR INC 34E S53Û7T2 » Ü001SS7 1 ICOL "T'3P\- 3 PUI1 [lU.IM sO’OSOE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on VGS + /- 30V Reduced turn off time High avalanced ruggedness VGS + /- 30V, Reduced turn off time
|
OCR Scan
|
001SS7
25-35kgÂ
523a1
2SK955
2SK956-01 equivalent
2SK956
2sk1018
2sk956 equivalent
2sk1144
2SK1388
2sk725 equivalent
2SK900
|
PDF
|
2SK1506 22
Abstract: 2SK1388 2SK1084 2SK1090 2SK1390 2SK1083M 2SK1096M 2SK1505M 2SK1822-01M 2SK1823-01
Text: COLLMER SEMICONDUCTOR INC b3E ]> • 22307^2 0001Ô72 Hñfi BICOL <§ MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low R d S ON , High Avalanche Ruggedness, Integrated G-SSurge Protection, 60 Volts Device Type 2SK1822-01M 2SK1823-01 2SK1969-01
|
OCR Scan
|
2SK1822-01M
T0220F15
2SK1823-01
t03pf
2SK1969-01
2SK1818M
2SK1979
2SK1276
2SK1506 22
2SK1388
2SK1084
2SK1090
2SK1390
2SK1083M
2SK1096M
2SK1505M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR
|
OCR Scan
|
2SK1089
2SK15Q8
2SK1389
2SK1390R
2SK2049
2SK1087MR
2SK1817MR
2SK2446-01
2SK2050
2SK1506
|
PDF
|