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Part	ECAD Model	Manufacturer	Description	Download	Buy
CN-DSUBHD62SK-000		Amphenol Cables on Demand	Amphenol CN-DSUBHD62SK-000 High-Density D-Subminiature (HD62 Female D-Sub) Connector, 62-Position Socket Contacts, Solder-Cup Terminals	Datasheet

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Amphenol Corporation CN-DSUBHD62SK-000 CONN D-SUB HD RCPT 62P SLDR CUP
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DigiKey	CN-DSUBHD62SK-000	Bulk	3		1	1 $10.95 10 $8.922 100 $7.274 1000 $6.475 10000 $6.475	Buy Now
Avnet Americas	CN-DSUBHD62SK-000	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	CN-DSUBHD62SK-000		41			1 $12.46 10 $10.82 100 $8.24 1000 $6.58 10000 $6.58	Buy Now
Newark	CN-DSUBHD62SK-000	Bulk	20		1	1 $10.66 10 $9.44 100 $8.24 1000 $7.51 10000 $7.51	Buy Now
Panasonic Electronic Components 2SK0615 MOSFET N-CH 80V 500MA M-A1
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Panasonic Electronic Components 2SK0664G0L MOSFET N-CH 50V 100MA SMINI3-F2
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	2SK0664G0L	Digi-Reel			1	1 $0.6 10 $0.6 100 $0.6 1000 $0.6 10000 $0.6	Buy Now
Panasonic Electronic Components 2SK060100L MOSFET N-CH 80V 500MA MINIP3-F1
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DigiKey	2SK060100L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	2SK060100L		670			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components 2SK066500L MOSFET N-CH 20V 100MA SMINI3-G1
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DigiKey	2SK066500L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SK0 Datasheets (97)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK0065	Panasonic	Silicon N-Channel Junction FET	Original	PDF
2SK0065	Panasonic	N-Channel Junction FET	Original	PDF
2SK0065	Panasonic	Silicon N-Channel Junction FET	Original	PDF
2SK0065	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK0065P	Panasonic	TRANS JFET N-CH 12V 0.2A 3NS-B1	Original	PDF
2SK0065Q	Panasonic	TRANS JFET N-CH 12V 0.8A 3NS-B1	Original	PDF
2SK0123	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK0123	Panasonic	Silicon N-Channel Junction FET	Original	PDF
2SK0123	Panasonic	N-Channel Junction FET	Original	PDF
2SK0123	Panasonic	Silicon N-Channel Junction FET	Original	PDF
2SK0198	Panasonic	TRANS JFET N-CH 30V 12A 3MINI3-G1	Original	PDF
2SK0198	Panasonic	FETs, IPD, IGBTs, GaAs MMICs	Original	PDF
2SK0198	Panasonic	For Low-Frequency Amplification	Original	PDF
2SK0198	Panasonic	Silicon N-Channel Junction FET	Original	PDF

2SK0198	Panasonic	N-Channel Junction FET	Original	PDF
2SK01980RL	Panasonic	JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 20MA 150MW MINI-3	Original	PDF
2SK0198P	Panasonic	TRANS JFET N-CH 30V 3A 3MINI3-G1	Original	PDF
2SK0198P	Panasonic	Silicon N-Channel Junction FET	Original	PDF
2SK0198Q	Panasonic	TRANS JFET N-CH 30V 6A 3MINI3-G1	Original	PDF
2SK0198Q	Panasonic	Silicon N-Channel Junction FET	Original	PDF

2SK0 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664G Silicon N-channel MOSFET For switching circuits • Package • High-speed switching • S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing	Original	2002/95/EC) 2SK0664G	PDF
2SK0198 Abstract: 2SK198 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET For low-frequency amplification • Package • High mutual conductance gm • Low-noise characteristics • Mini type package, allowing downsizing of the sets and automatic	Original	2002/95/EC) 2SK0198 2SK198) 2SK0198 2SK198	PDF
2SK0662 Abstract: 2SK662 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) 2SK0662 2SK662) 2SK0662 2SK662	PDF
Untitled Abstract: No abstract text available Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 (0.65) ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic	Original	2SK0620 2SK620)	PDF
Untitled Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK0301 (2SK301) Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm M Di ain sc te on na tin nc ue e/ d 5.0±0.2 4.0±0.2 5.1±0.2 • Features ■ Absolute Maximum Ratings (Ta = 25°C)	Original	2SK0301 2SK301) SC-43	PDF
Untitled Abstract: No abstract text available Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2	Original	2SK0655 2SK655)	PDF
2SK0601 Abstract: 2SK601 Text: Silicon MOSFETs Small Signal 2SK0601 (2SK601) Silicon N-channel MOSFET Unit: mm For switching circuits 4.5±0.1 1.6±0.2 1.0+0.1 –0.2 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C 0.4±0.04 Symbol Rating Unit Drain-source voltage VDS 80 V Gate-source voltage (Drain open)	Original	2SK0601 2SK601) 2SK0601 2SK601	PDF
Untitled Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Drain-sourse voltage	Original	2SK0663G	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching	Original	2002/95/EC) 2SK0665 2SK665)	PDF
SJF00005BED Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05	Original	2SK0123 2SK123) SJF00005BED	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1	Original	2002/95/EC) 2SK0663 2SK663)	PDF
Untitled Abstract: No abstract text available Text: Silicon MOSFETs Small Signal 2SK0614 (2SK614) Silicon N-channel MOSFET Unit: mm 5.0±0.2 5.1±0.2 For switching circuits 4.0±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low ON resistance • High-speed switching • Allowing to be driven directly CMOS, TTL	Original	2SK0614 2SK614)	PDF
Untitled Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type	Original	2SK0198 2SK198)	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30	Original	2002/95/EC) 2SK0198 2SK198)	PDF

Untitled Abstract: No abstract text available Text: Silicon Junction FETs Small Signal 2SK0663G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package ■ Features • Low noise figure NF • High gate-drain voltage (source open) VGDO • SMini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing	Original	2SK0663G	PDF
2SK0662 Abstract: 2SK662 Text: Silicon Junction FETs Small Signal 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 • Features 1.25±0.1 0.425 0.3–0 0.65 1.3±0.1 1 0.65 2.0±0.2 +0.1 0.425 ● High mutual conductance gm ● Low noise type	Original	2SK0662 2SK662) 2SK0662 2SK662	PDF
2SK620 Abstract: 2SK0620 Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm +0.2 2.8 –0.3 For switching +0.25 1.5 –0.05 1.45 1 3 +0.1 0.4 –0.05 1.9±0.2 +0.2 2.9 –0.05 ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic	Original	2SK0620 2SK620) 2SK620 2SK0620	PDF
2SK0198 Abstract: 2SK198 Text: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 1.5 –0.05 0.95 +0.2 ● High mutual conductance gm	Original	2SK0198 2SK198) 2SK0198 2SK198	PDF
2SK0662 Abstract: 2SK662 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency and low-noise amplification • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) 2SK0662 2SK662) 2SK0662 2SK662	PDF
2SK0663 Abstract: 2SK663 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in	Original	2002/95/EC) 2SK0663 2SK663) 2SK0663 2SK663	PDF
2SK0664 Abstract: 2SK664 Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1	Original	2002/95/EC) 2SK0664 2SK664) 2SK0664 2SK664	PDF
2SK0665 Abstract: 2SK665 Text: Silicon MOS FETs Small Signal 2SK0665 (2SK665) Silicon N-Channel MOS FET (0.425) unit: mm 0.3+0.1 –0.0 For switching 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage	Original	2SK0665 2SK665) 2SK0665 2SK665	PDF
2SK0665 Abstract: 2SK665 Text: Silicon MOSFETs Small Signal 2SK0665 (2SK665) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High-speed switching • Small drive current owing to high input inpedance	Original	2SK0665 2SK665) 2SK0665 2SK665	PDF
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK0664 (2SK664) Silicon N-channel MOSFET For switching circuits (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ 2 0.2±0.1 1 2.1±0.1 M Di ain sc te on na	Original	2002/95/EC) 2SK0664 2SK664)	PDF

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Amphenol Corporation CN-DSUBHD62SK-000

Panasonic Electronic Components 2SK0615

Panasonic Electronic Components 2SK0664G0L

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2SK0 Datasheets (97)

2SK0 Datasheets Context Search

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2SK0198

2SK0662

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2SK0601

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SJF00005BED

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2SK0662

2SK620

2SK0198

2SK0662

2SK0663

2SK0664

2SK0665

2SK0665

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