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    Toshiba America Electronic Components 2SJ349(F)

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    2SJ349 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ349 Toshiba P-Channel MOSFET Original PDF
    2SJ349 Toshiba Original PDF
    2SJ349 Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10R1B) Original PDF
    2SJ349 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ349 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ349 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan PDF
    2SJ349 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SJ349(F,T) Toshiba 2SJ349 - MOSFET P-CH 60V 20A TO-3 Original PDF

    2SJ349 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    j349

    Abstract: 2SJ349 transistor j349
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SJ349 j349 2SJ349 transistor j349

    j349

    Abstract: transistor j349
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications z Unit: mm 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SJ349 j349 transistor j349

    2SJ349

    Abstract: No abstract text available
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications l Unit: mm 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) l High forward transfer admittance


    Original     		PDF 2SJ349 2SJ349

    J349

    Abstract: 2SJ349 transistor j349
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SJ349 J349 2SJ349 transistor j349

    2SJ349

    Abstract: No abstract text available
    Text: 2SJ349 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SJ349 2SJ349

    j349

    Abstract: 2SJ349
    Text: 2SJ349 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ349 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 33mΩ (標準) z オン抵抗が低い。


    Original     		PDF 2SJ349 -10VID SC-67 2-10R1B 2002/95/EC) j349 2SJ349

    2SJ349

    Abstract: No abstract text available
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SJ349 2SJ349

    j349

    Abstract: transistor j349 2SJ349
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SJ349 j349 transistor j349 2SJ349

    j349

    Abstract: 2SJ349
    Text: 2SJ349 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ349 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 33mΩ (標準) z オン抵抗が低い。


    Original     		PDF 2SJ349 -10VID SC-67 2-10R1B 2002/95/EC) j349 2SJ349

    j349

    Abstract: transistor j349 2SJ349
    Text: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ349 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 33 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SJ349 j349 transistor j349 2SJ349

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SJ349

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ349 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RßS (ON) — 33 mH (Typ.)


    OCR Scan     		PDF 2SJ349 2SJ349

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SJ349 Field Effect Transistor Silicon P Channel M O S Type L2-ji-MOS V High Speed, High Current Switching, D C -D C Converter Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive • Low Drain-Source ON Resistance - R DS(ON)


    OCR Scan     		PDF 2SJ349

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r • 4V Gate Drive


    OCR Scan     		PDF 2SJ349 --50V,

    2SJ349

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE L2-tt-M O SV 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ±0.3 ¿3.2 ±0.2


    OCR Scan     		PDF 2SJ349 33mfl 100/uA 2SJ349

    K2312

    Abstract: j378 K2314
    Text: L2-7c-MOS V Maximum Rating Application Type No. Id A DC/DC Converter High Current Switching Motor Drive 2SJ360 “2SJ377 •2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 •2SK2312 •2SK2173 '2SK 2313 '2SK 2267 2SK2200 2SK2201


    OCR Scan     		PDF O-220 T0-220 O-220FL/SM O-220AB 2SJ360 2SJ377 K2312 j378 K2314

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance r DS (ON) = 33m il (Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SJ349 --60V)

    Diode FAJ 32

    Abstract: 2SJ349
    Text: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ349 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • • 4V Gate Drive


    OCR Scan     		PDF 2SJ349 Diode FAJ 32 2SJ349

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915

    N7C3

    Abstract: No abstract text available
    Text: TO SH IB A 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M OSV 2SJ349 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : R d s (ON)=


    OCR Scan     		PDF 2SJ349 --20S --100//A 20kfl) ----20A, N7C3

    Jab zener

    Abstract: No abstract text available
    Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)


    OCR Scan     		PDF T0-220 2SJ334 2SK2312 Packag55 2SK1379 Jab zener