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    Toshiba America Electronic Components 2SJ304(F)

    MOSFET P-CH 60V 14A TO220NIS
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    Toshiba America Electronic Components 2SJ304

    SILICON P CHANNEL MOS TYPE (L2-PI-MOSIV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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    2SJ304 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ304 Toshiba TRANS MOSFET P-CH 60V 14A 3(2-10R1B) Original PDF
    2SJ304 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ304 Toshiba Original PDF
    2SJ304 Toshiba Field Effect Transistor Scan PDF
    2SJ304 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan PDF
    2SJ304(F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 14A TO220NIS Original PDF

    2SJ304 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ304

    Abstract: J304
    Text: 2SJ304 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅣ 2SJ304 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 80mΩ (標準) z オン抵抗が低い。


    Original     		2SJ304 -10VID SC-67 2-10R1B 2002/95/EC) 2SJ304 J304 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) High forward transfer admittance


    Original     		2SJ304 PDF

    2SJ304

    Abstract: J304
    Text: 2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) High forward transfer admittance


    Original     		2SJ304 2SJ304 J304 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance


    Original     		2SJ304 SC-67 2-10R1B PDF

    2SJ304

    Abstract: J304
    Text: 2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance


    Original     		2SJ304 2SJ304 J304 PDF

    2SJ304

    Abstract: No abstract text available
    Text: 2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) l High forward transfer admittance


    Original     		2SJ304 2SJ304 PDF

    2SJ304

    Abstract: J304
    Text: 2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSIV 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance


    Original     		2SJ304 2SJ304 J304 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOS]V 2SJ304 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm 10 + 0.3 r ¿ 3.2 ± 0.2


    OCR Scan     		2SJ304 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOSlV 2SJ304 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 t 0.3 4-Volt Gate Drive


    OCR Scan     		2SJ304 --60V) 20kil) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ304 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOSlV HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 t 0 .3 4-Volt Gate Drive


    OCR Scan     		2SJ304 PDF

    2SJ304

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOS1V 2SJ304 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 4-Volt Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		2SJ304 2SJ304 PDF

    7A SF SC 30

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SF i <; i 3 n d HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm 10 + 0.3


    OCR Scan     		2SJ304 --60V) 7A SF SC 30 PDF

    2SJ304

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-^-MOSlV 2SJ304 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 80 mH (Typ.)


    OCR Scan     		2SJ304 2SJ304 PDF

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915 PDF

    k 2057

    Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
    Text: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805


    OCR Scan     		-220FL/SM k 2057 K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407 PDF