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    28F256A Search Results

    28F256A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F256A Intel 256K (32K x 8) CMOS Flash Memory Scan PDF

    28F256A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel 28F256

    Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


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    PDF IC191-0322-001 28F256A, 28F256 28F512, 28F010, 28F020 32-LEAD intel 28F256 intel 28F256 flash a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16

    a6628

    Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


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    PDF IC51-0324-453 28F256A, 28F256 28F512, 28F010, 28F020 a6628 intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020

    P28F256A-150

    Abstract: 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150
    Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 0 5 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


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    PDF 28F256A 32-Pin 32-Lead P28F256A-120 P28F256A-150 N28F256A-120 N28F256A-150 ER-20 ER-24 RR-60 P28F256A-150 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


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    PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


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    PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    intel 27c512 eprom

    Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
    Text: LEAPER-3D USB HANDY FLASH IC WRITER LEAPER-3D is a compact and light programmer, very suitable for the development and servicing or the hobby environment. Combining EPROM and FLASH memory devices programming, LEAPER-3D FLASH IC WRITER supports various 8-Bit devices by its 32-pin ZIF socket.


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    PDF 32-pin 9x/2000/XP MX29F040 PM29F004B PM29LV004T PM29F004T PM29LV002B SST39SF010A SST39LF010 SST39VF020 intel 27c512 eprom W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512

    M5m27c201j

    Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
    Text: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base


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    PDF Am27C010- Am27C010-J Am29F010B-J Am29LV010B-J Am27C020-J Am29F002B-J Am29F002T-J Am27C040-J Am27H010 M5m27c201j 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J

    Untitled

    Abstract: No abstract text available
    Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


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    PDF 28F256A 2bl75

    Untitled

    Abstract: No abstract text available
    Text: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program


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    PDF 28F256A Cu56A-150 150f1* F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325,

    28F256A

    Abstract: 29024
    Text: INTEL CORP inter • MEMORY/LOGIC 20E D ■ 4a2bl7b 00b72fll 3 ■ MSWMKSIS 0MF ^!M/?\?D©M 28F256A 256K (32K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte-Program


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    PDF 00b72fll 28F256A T-V6-/3-27 32-Lead 29024

    F256A-200

    Abstract: 28F256A P28F256A-150 N28F256A-120 28F256 2SF256 32-PIN 80C186 P28F256A-120
    Text: in te l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10/ j.s Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


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    PDF 28F256A P28F256A-120 P28F256A-150 N28F256A-120 N28F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325, F256A-200 28F256A P28F256A-150 28F256 2SF256 32-PIN 80C186 P28F256A-120

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5 % Vpp High-Performance Read


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    PDF 28F256A 32-Pin 32-Lead P20F256A-15O ER-20, ER-24, RR-60, AP-316, AP-325,

    28F256A200

    Abstract: order 231369 29024
    Text: « y « « in t e i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P ro g ra m m in g T M Algorithm


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    PDF 28F256A 28F256A 32-PIN 32-LEAD N28F256A-120 N28F256A-150 N28F256A-200 P28F256A-120 P2BF256A-150 P28F256A-200 28F256A200 order 231369 29024

    P28F256A-150

    Abstract: F256A intel 28f256a
    Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Qulck-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


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    PDF 28F256A 32-LEAD P28F256A-120 P28F256A-150 F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, P28F256A-150 F256A intel 28f256a

    Untitled

    Abstract: No abstract text available
    Text: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller


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    PDF 28F256A ER-20, ER-24, RR-60, AP-316, AP-325,

    Untitled

    Abstract: No abstract text available
    Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current


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    PDF Am28F020A 32-pin

    Untitled

    Abstract: No abstract text available
    Text: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC


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    PDF Am28F256 32-Pin 28F256

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase


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    PDF Am28F256 32-Pin 0257S2Ã

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current


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    PDF Am28F512A 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time


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    PDF 32-Pin 28F512A 2S752Ã 0032fc

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    2SF256

    Abstract: M28F256A
    Text: rz7 SCS-THOMSON 28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)


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    PDF M28F256A 100ns 10jas M28F256A PDIP32 PLCC32 2SF256

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMDH 28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current


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    PDF Am28F256A 32-Pin 100speed

    Untitled

    Abstract: No abstract text available
    Text: in ie l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 ¡jl s Typical Byte-Program — 0.5 Second Chip-Program


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    PDF A28F256A 32-LEAD AP28F256A-120 AP28F256A-150 AN28F256A-150 AP-316, 28F256A ER-21, 28F256