intel 28F256
Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020
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IC191-0322-001
28F256A,
28F256
28F512,
28F010,
28F020
32-LEAD
intel 28F256
intel 28F256 flash
a15 diode
a4 3f
D021
A15-11
a3 electronic device
A1610
transistor A16
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a6628
Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020
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IC51-0324-453
28F256A,
28F256
28F512,
28F010,
28F020
a6628
intel 28F256
intel 28F256 flash
IC51-0324-453
28F256A
a7529
IC51
28F010
28F020
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P28F256A-150
Abstract: 28F256A intel 80c186 N28F256A-120 80C186 P28F256A-120 intel 28f256a AP-325, Guide to Flash Memory Reprogramming N28F256A-150
Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 0 5 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read
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28F256A
32-Pin
32-Lead
P28F256A-120
P28F256A-150
N28F256A-120
N28F256A-150
ER-20
ER-24
RR-60
P28F256A-150
28F256A
intel 80c186
N28F256A-120
80C186
P28F256A-120
intel 28f256a
AP-325, Guide to Flash Memory Reprogramming
N28F256A-150
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winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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intel 27c512 eprom
Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
Text: LEAPER-3D USB HANDY FLASH IC WRITER LEAPER-3D is a compact and light programmer, very suitable for the development and servicing or the hobby environment. Combining EPROM and FLASH memory devices programming, LEAPER-3D FLASH IC WRITER supports various 8-Bit devices by its 32-pin ZIF socket.
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32-pin
9x/2000/XP
MX29F040
PM29F004B
PM29LV004T
PM29F004T
PM29LV002B
SST39SF010A
SST39LF010
SST39VF020
intel 27c512 eprom
W27c256
f29c51002t
27cxxx programming
27c080
transistor N100
ti 27c256
TI 27c010
27C64 EPROM programmer
eprom 27c512
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M5m27c201j
Abstract: 28F101 w49v002fap W49F002UP-B intel 28F256 gang capacitor am29f020 Fujitsu MBM27C1000 gang capacitor pin details M5M27C101J
Text: PRODUCT DATA SHEET AD63 479-901 and AD51 (479-810) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD63 32 32 01 P .6 Clamshell Product Code Pins on skt Pins on Base
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Am27C010-
Am27C010-J
Am29F010B-J
Am29LV010B-J
Am27C020-J
Am29F002B-J
Am29F002T-J
Am27C040-J
Am27H010
M5m27c201j
28F101
w49v002fap
W49F002UP-B
intel 28F256
gang capacitor
am29f020
Fujitsu MBM27C1000
gang capacitor pin details
M5M27C101J
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Untitled
Abstract: No abstract text available
Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
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28F256A
2bl75
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Untitled
Abstract: No abstract text available
Text: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program
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28F256A
Cu56A-150
150f1*
F256A-120
F256A-150
ER-20,
ER-24,
RR-60,
AP-316,
AP-325,
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28F256A
Abstract: 29024
Text: INTEL CORP inter • MEMORY/LOGIC 20E D ■ 4a2bl7b 00b72fll 3 ■ MSWMKSIS 0MF ^!M/?\?D©M 28F256A 256K (32K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte-Program
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00b72fll
28F256A
T-V6-/3-27
32-Lead
29024
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F256A-200
Abstract: 28F256A P28F256A-150 N28F256A-120 28F256 2SF256 32-PIN 80C186 P28F256A-120
Text: in te l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10/ j.s Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read
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28F256A
P28F256A-120
P28F256A-150
N28F256A-120
N28F256A-150
ER-20,
ER-24,
RR-60,
AP-316,
AP-325,
F256A-200
28F256A
P28F256A-150
28F256
2SF256
32-PIN
80C186
P28F256A-120
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Untitled
Abstract: No abstract text available
Text: in te i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5 % Vpp High-Performance Read
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28F256A
32-Pin
32-Lead
P20F256A-15O
ER-20,
ER-24,
RR-60,
AP-316,
AP-325,
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28F256A200
Abstract: order 231369 29024
Text: « y « « in t e i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P ro g ra m m in g T M Algorithm
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28F256A
28F256A
32-PIN
32-LEAD
N28F256A-120
N28F256A-150
N28F256A-200
P28F256A-120
P2BF256A-150
P28F256A-200
28F256A200
order 231369
29024
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P28F256A-150
Abstract: F256A intel 28f256a
Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Qulck-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program
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28F256A
32-LEAD
P28F256A-120
P28F256A-150
F256A-120
F256A-150
ER-20,
ER-24,
RR-60,
AP-316,
P28F256A-150
F256A
intel 28f256a
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Untitled
Abstract: No abstract text available
Text: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller
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28F256A
ER-20,
ER-24,
RR-60,
AP-316,
AP-325,
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Untitled
Abstract: No abstract text available
Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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Am28F020A
32-pin
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Untitled
Abstract: No abstract text available
Text: n FIN A L Am28F256 Advanced 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS Low power consumption ■ ■ — 0.5 second typical chip program ■ — 32-pin PDIP — 32-pin PLCC
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Am28F256
32-Pin
28F256
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Untitled
Abstract: No abstract text available
Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase
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Am28F256
32-Pin
0257S2Ã
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current
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Am28F512A
32-Pin
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Untitled
Abstract: No abstract text available
Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time
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32-Pin
28F512A
2S752Ã
0032fc
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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2SF256
Abstract: M28F256A
Text: rz7 SCS-THOMSON 28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)
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M28F256A
100ns
10jas
M28F256A
PDIP32
PLCC32
2SF256
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Untitled
Abstract: No abstract text available
Text: FINAL AMDH 28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current
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Am28F256A
32-Pin
100speed
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Untitled
Abstract: No abstract text available
Text: in ie l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 ¡jl s Typical Byte-Program — 0.5 Second Chip-Program
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A28F256A
32-LEAD
AP28F256A-120
AP28F256A-150
AN28F256A-150
AP-316,
28F256A
ER-21,
28F256
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