Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1525 TOSHIBA Search Results

    2SD1525 TOSHIBA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    2SD1525 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1525

    Abstract: 2-21F1A 316tc
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525 2SD1525 2-21F1A 316tc

    Untitled

    Abstract: No abstract text available
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525

    2sd1525 toshiba

    Abstract: No abstract text available
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525 2-21F1A 2sd1525 toshiba

    2sd1525 toshiba

    Abstract: No abstract text available
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525 2sd1525 toshiba

    2SD1525

    Abstract: 2-21F1A
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525 2SD1525 2-21F1A

    2SD1525

    Abstract: 2-21F1A
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A · High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) · Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525 2SD1525 2-21F1A

    2SD1525

    Abstract: 2-21F1A MS-524
    Text: 2SD1525 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1525 通 信 工 業 用 ○ 大電力スイッチング用 • 単位: mm 許容コレクタ電流が大きい。: IC = 30 A • 直流電流増幅率が高い。


    Original     		PDF 2SD1525 2-21F1A 2SD1525 2-21F1A MS-524

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    2-21F1A

    Abstract: 2SD1525
    Text: TO SH IBA 2SD1525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 525 HIGH CURRENT SWITCHING APPLICATIONS High Collector Current : l0 = 3OA High DC Current Gain : hjpg (i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1525 2-21F1A 2SD1525

    2-21F1A

    Abstract: 2SD1525 2SD152 2SD1525(F)
    Text: 2SD1525 TOSHIBA 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm High Collector Current : l£ = 30A High DC Current Gain : hjpg (i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1525 20-5M 2-21F1A --10A, 0-01a> 2SD1525 2SD152 2SD1525(F)

    2-21F1A

    Abstract: 2SD1525
    Text: TO SH IBA 2SD1525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 525 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • High Collector Current : l0 = 3OA • High DC Current Gain : hjpg (i) = 1000 (Min.) • Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1525 2-21F1A 2SD1525

    2sd1525 toshiba

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1525 INDUSTRIAL APPLICATION Unit in nan HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min.) (Vc e = 5V, Ic=20A) . Monolithic Construction with Built-In Base-Emitter


    OCR Scan     		PDF 2SD1525 2sd1525 toshiba

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD1525 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm • • • High Collector Current : Iq = 30A High DC Current Gain : hjrE(l) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1525 20-5M

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD1525 TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON n mmr mmr s i m mm s h t HIGH CURRENT SWITCHING APPLICATIONS • • • Unit in mm High Collector Current : I q —30A High DC Current Gain : h;pE(i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt


    OCR Scan     		PDF 2SD1525 --30A 50V9o

    2SD157

    Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
    Text: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589


    OCR Scan     		PDF 2SD1592 2SD1141 2SD1446 2SD1237L 2SC3692 2SD1271A 2SD1833 2SD1668 2SD1271 2SD157 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266