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    2SD131 Search Results

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    2SD1312-T-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    Rochester Electronics LLC 2SD1312-AZ

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    Samtec Inc TW-17-02-S-D-131-100

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    2SD131 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD131 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD131 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD131 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD131 Unknown Cross Reference Datasheet Scan PDF
    2SD131 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD131 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD131 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD131 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD131 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1310 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1310 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1310 Unknown Cross Reference Datasheet Scan PDF
    2SD1310 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1310 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1310 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1311 NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1311 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1311 Unknown Cross Reference Datasheet Scan PDF
    2SD1311 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1311 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SD131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sd1314

    Abstract: 2-21F1A 2Sd13
    Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)


    Original     		PDF 2SD1314 2sd1314 2-21F1A 2Sd13

    2Sd13

    Abstract: No abstract text available
    Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)


    Original     		PDF 2SD1314 2-21F1A 2Sd13

    2sd1314

    Abstract: 2-21F1A
    Text: 2SD1314 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1314 通 信 工 業 用 ○ 大電力スイッチング用 ○ モータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 100 (最小) (IC = 15 A)


    Original     		PDF 2SD1314 2-21F1A 20070701-JA 2sd1314 2-21F1A

    2sd1314

    Abstract: 2-21F1A
    Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)


    Original     		PDF 2SD1314 2sd1314 2-21F1A

    Untitled

    Abstract: No abstract text available
    Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications • Unit: mm High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)


    Original     		PDF 2SD1314

    2-21F1A

    Abstract: 2SD1314
    Text: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) · Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)


    Original     		PDF 2SD1314 2-21F1A 2SD1314

    MG30H1BL1

    Abstract: S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 MG150H1FL1 A1015 MG50G6EL9 MG150H2YL1
    Text: R egulator T ransisto rs Bipolar Darlington 1 O ro* Connection V ceo (SUS) (V) Maximum Rating ic<A) 15 10 20 2SD1314* 30 50 75 100 150 200 300 400 MG30Û1BL3 MG50G1BL3 450 <D BL MG30G18L4 MG30H1BL1 550 MG1SG1AL3 450 AL MG100G1AL3 MG15H1AL1 550 S3885* FL


    OCR Scan     		PDF 2SD1314* MG50G1BL3 MG30G18L4 MG15H1AL1 S3885* MG30H1BL1 MG100G1AL3 MG100G1FL1 MG150H1FL1 MG200H1FL1A S3885 MP6502 MG30G63L2 MP6504 MG50G2YL9 A1015 MG50G6EL9 MG150H2YL1

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :


    OCR Scan     		PDF 2SD1313 20/is

    RA5E

    Abstract: 2SD131 2SD1316
    Text: Power Transistors 2SD1316 2SD1316 Package Dim ensions Unit . mm , Silicon NPN Triple-D iffused Planar Darlington Type 3.7max l. lm a x . Medium Speed Power Sw itching j • Features • • • • • 30V Z en er diode built -in b e tw e e n C and B Very sm all fluctuation in breakdow n vo ltag es


    OCR Scan     		PDF 2SD1316 2SD131Ã RA5E 2SD131 2SD1316

    2SD1318

    Abstract: 30v ZENER DIODE
    Text: Power Transistors 2SD1318 2SD1318 Package Dim ensions Silicon NPN Triple-D iffused Planar D arlington Type M edium Speed Power Sw itching • Features • 30V Z e n e r d iode b uilt-in b e tw e e n C and B • V ery sm all flu ctu atio n in b reak d o w n v o ltag es


    OCR Scan     		PDF 2SD1318 2SD1318 30v ZENER DIODE

    trf 510 transistor

    Abstract: trf 510 2SD1319
    Text: Power Transistors 2SD1319 ^=332*152 a a i b b T 4 s i o 2SD1319 Package D im ensions Unit : mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 1. lmax 8.7 max. 6.5 max. M edium Speed Power S w itching I* *1 _D • Features • • • • • 60V Zener diode built-in between C and B


    OCR Scan     		PDF 2SD1319 bT32052 DDltt15 trf 510 transistor trf 510 2SD1319

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)


    OCR Scan     		PDF 2SD1314 VCC-300V

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


    OCR Scan     		PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062

    2SC4542

    Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
    Text: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313


    OCR Scan     		PDF 2SC3789 2SC2551 2SC3209 2SC1573A 2SC4106 2SC2553 2SC2518 2SC4107 2SC3626 2SC4423 2SC4542 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555

    2SD1312

    Abstract: 2SB984
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SD1312 The 2SD1312 is designed for use in driver and output stages of audio frequency amplifiers. PACKAGE DIMENSIONS in millimeters inches FEATURES • High total power dissipation and high breakdown voltage: 1.0 W at 25 °C ambient temperature /V qeo = 8 0 V


    OCR Scan     		PDF 2SD1312 2SD1312 2SB984

    2SD1318

    Abstract: No abstract text available
    Text: Power Transistors 2SD1318 2SD1318 Package Dim ensions U n it ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max, 8.7 n Medium Speed Power Sw itching l.lm a x 6.5m ax. r— i • Features • 30V Zener diode built-in between C and B • Very small fluctuation in breakdown voltages


    OCR Scan     		PDF 2SD1318 2SD1318

    2SD1312

    Abstract: w18 transistor
    Text: SEC j m ^ iv r x Silicon Transistor A 2SD1312 N PN X U =1 > b =7 > i> 7*9 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier mm / P A C K A G E # * / FEATURES DIMENSIONS Unit : mm O ¿T — T ' -i 7Ì" 7 > 7 i^<7) K -7 j o / J ^ T 'P t o è <, B i t HE T- r o


    OCR Scan     		PDF 2SD1312 SB984Â PWS10 cycleg50 io--00 2SD1312 w18 transistor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1313 TOSHIBA TRANSISTOR n w ar SILICON NPN TRIPLE DIFFUSED TYPE nm m r n m w êt n• mm HIGH PO W ER AM PLIFIER APPLICATIONS. HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 20.5MAX. • • • • High Power Dissipation


    OCR Scan     		PDF 2SD1313 -200V

    2SD1315

    Abstract: No abstract text available
    Text: Power Transistors 2 S D13 15 2SD1315 P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar Darlington Type ^ U n it mm 4.4max. 10.2max. 2.9max M ed iu m S p ee d P o w e r • F e a tu re s £3.1 ±0.1 • High DC cu rre n t gain htE • High collector-base voltage


    OCR Scan     		PDF 2SD1315 2SD1315

    2SD1317

    Abstract: p82 diode p82n
    Text: Pow er Transistors 2SD1317 2SD1317 Package Dim ensions Unit . mm Silicon NPN Triple-Diffused Planar Darlington Type 8.7 M edium Speed Power S w itching 3.7max. n l.l.max. 6. 5m ax . r— i _D • Features • 30V Z e n e r d iode b u ilt-in b e tw e e n C and B


    OCR Scan     		PDF 2SD1317 100mH, b13ES52 p82 diode p82n

    2SD1315

    Abstract: A401
    Text: P o w er T ra n s is to rs 2S D 13 15 2SD1315 P a c k a g e D im e n s io n s Silicon NPN Triple-Diffused Planar Darlington Type 5 7max 2.9m ax “ tr M e d iu m S p e e d P o w e r • Unit ' mm 4.4max. 10.2max. F e a tu re s X 03.1 • H igh D C c u r r e n t gain h fE


    OCR Scan     		PDF 2SD1315 Tc-25 O-220 20/IA-1 A401

    2SD1319

    Abstract: No abstract text available
    Text: Power Transistors 2SD1319 bT35flSE O O l b b T M SID 2SD1319 Package D im ensions U n it ì mm Silicon NPN Triple-Diffused Planar Darlington Type 8 .7 M edium Speed Power Sw itching 3 .7 m ax . max. 1.1 max. 6.5 max. jq • Features • 60V Zener diode built-in between C and B


    OCR Scan     		PDF bT32aSE 2SD1319

    2SB1039

    Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
    Text: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)


    OCR Scan     		PDF 2SD1304 2SD1305 2SD1306 2SD1308 2SD1309 2SD1310 2SD1311 2SD1326 T0-220F 2SD1327 2SB1039 MP40 2SD1347

    2SD1316

    Abstract: 30v 1,3w zener diode
    Text: Power Transistors 2SD1316 2SD1316 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type U ni t . mm 3.j7max 8.7 max Medium Speed Power Switching | l .l m a x . 6 5 max • Features • 30V Z ener diode built-in b etw een C and B • Very small fluctuation in breakdow n voltages


    OCR Scan     		PDF 2SD1316 2SD1316 30v 1,3w zener diode