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    2SD1221 TOSHIBA Search Results

    2SD1221 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SD1221 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906

    2sd1221 toshiba

    Abstract: D1221 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 2sd1221 toshiba D1221 2SB906 2SD1221

    2SB906

    Abstract: 2SD1221 D1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 2SB906 2SD1221 D1221

    D1221

    Abstract: 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 D1221 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906

    d1221

    Abstract: 2SD1221 2SB906
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 d1221 2SD1221 2SB906

    d1221

    Abstract: 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 d1221 2SB906 2SD1221

    d1221

    Abstract: 2SB906 2SD1221
    Text: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)


    Original     		PDF 2SD1221 2SB906 d1221 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221

    2SB906

    Abstract: 2SD1221 B906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 2SB906 2SD1221 B906

    B906

    Abstract: 2SB906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 B906 2SB906 2SD1221

    transistor B906

    Abstract: B906 2SB906 2SD1221 B-906
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906

    Untitled

    Abstract: No abstract text available
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221

    Untitled

    Abstract: No abstract text available
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)


    Original     		PDF 2SB906 2SD1221

    transistor B906

    Abstract: 2SB906 7B1A B-906 B906 2SD1221
    Text: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。


    Original     		PDF 2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221

    2SD1221

    Abstract: 2sd1221 toshiba 2SB906
    Text: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221 2sd1221 toshiba

    2SB906

    Abstract: 2SD1221 2sd1221 toshiba
    Text: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221 2sd1221 toshiba

    Untitled

    Abstract: No abstract text available
    Text: 2SD1221 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. • • • Low Collector Saturation Voltage : Vc e (sat) = 0.4V (Typ.) High Power Dissipation P n = 9.0W Complementary to 2SB906


    OCR Scan     		PDF 2SD1221 2SB906

    2SD1221

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221

    V30010

    Abstract: 20W power transistor
    Text: TOSHIBA 2SD1221 ^Transistor Silicon NPN Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications F e a tu re s • Low Collector Saturation Voltage - ^CE (Satj = 0.4V (Typ.) (Iq = 3A, lB = 0.3A) • High Power Dissipation - Pc = 20W (Tc = 25~C )


    OCR Scan     		PDF 2SD1221 2SB906 150LLECTOR-EMITTER V30010 20W power transistor

    2SD1221

    Abstract: 2SB906
    Text: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221

    2SD1221

    Abstract: 2SB906 2sd1221 toshiba
    Text: TOSHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • Low Collector Saturation Voltage : VCE (sat) = °-4 v (TyP-) High Power Dissipation : Pg = 20 W


    OCR Scan     		PDF 2SD1221 2SB906 2SD1221 2sd1221 toshiba

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • • • (A) Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P q = 20W


    OCR Scan     		PDF 2SD1221 2SB906 95MAX --50mA,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W


    OCR Scan     		PDF 2SD1221 2SB906