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2SC6072 Abstract: C6072 Text: 2SC6072 東芝複合デバイスシリコンNPNエピタキシャル形トランジスタ 2SC6072 ○ 電力増幅用 ○ 励振段電力増幅用 • 単位: mm :fT=200MHz 標準トランジション周波数が高い。絶対最大定格 (Ta = 25°C)	Original	2SC6072 200MHz( SC-67 2-10U1A 2SC6072 C6072	PDF
2SC6072 Abstract: C6072 Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic	Original	2SC6072 2SC6072 C6072	PDF
2SC6072 Abstract: C6072 Text: 2SC6072 東芝複合デバイスシリコンNPNエピタキシャル形トランジスタ 2SC6072 ○ 電力増幅用 ○ 励振段電力増幅用 • 単位: mm :fT=200MHz 標準トランジション周波数が高い。絶対最大定格 (Tc = 25°C)	Original	2SC6072 200MHz( SC-67 2-10U1A 20070701-JA 2SC6072 C6072	PDF
Untitled Abstract: No abstract text available Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic	Original	2SC6072 SC-67 2-10U1A	PDF
2SC6072 Abstract: No abstract text available Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Tc = 25°C) Characteristic	Original	2SC6072 SC-67 2-10U1A 2SC6072	PDF
2SC6072 Abstract: C6072 Text: 2SC6072 TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type 2SC6072 Unit: mm Power Amplifier Applications Driver Stage Amplifier Applications ・High transition frequency: fT = 200 MHz typ. Absolute Maximum Ratings (Ta = 25°C) Characteristic	Original	2SC6072 SC-67 2-10U1A 2SC6072 C6072	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N	PDF
2SC2625 Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600 Text: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300	Original	2C5000 2N2453DIE 2C2453 2N3807DIE 2C3807 2N6287DIE 2C6287 2N6295DIE 2C6295 2SC2625 power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF

45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322	PDF