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    Toshiba America Electronic Components 2SC5692(TE85L,F)

    Trans GP BJT NPN 50V 2.5A 625mW 3-Pin TSM T/R
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    Verical 2SC5692(TE85L,F) 9,000 353
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    2SC5692(TE85L,F) 3,000 226
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    Quest Components 2SC5692(TE85L,F) 7,200
    • 1 $0.93
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    Chip1Stop 2SC5692(TE85L,F) Cut Tape 3,000
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    • 1000 $0.093
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    Toshiba America Electronic Components 2SC5692(TE85LF

    Trans GP BJT NPN 50V 2.5A 3-Pin TSM (Alt: 2SC5692(TE85L,F))
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    Avnet Asia 2SC5692(TE85LF 24 Weeks 3,000
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    2SC5692 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5692 Toshiba Transistor Original PDF
    2SC5692 Toshiba NPN Transistor Original PDF

    2SC5692 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5692

    Abstract: 23S1C
    Text: 2SC5692 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。


    Original     		PDF 2SC5692 2SC5692 23S1C

    Untitled

    Abstract: No abstract text available
    Text: 2SC5692 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5692 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.3 A 直流電流増幅率が高い。


    Original     		PDF 2SC5692

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5692 Package Name: TSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s


    Original     		PDF 2SC5692

    2SC5692

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692 2SC5692

    Untitled

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692

    Untitled

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692

    2SC5692

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692 2SC5692

    2sc5692

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692 2sc5692

    2SC5692

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692 2SC5692

    Untitled

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692

    Untitled

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692

    Untitled

    Abstract: No abstract text available
    Text: 2SC5692 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5692 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)


    Original     		PDF 2SC5692

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original     		PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    TPC6801

    Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
    Text: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh


    Original     		PDF

    64Mb-SRAM

    Abstract: TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F
    Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年10月号 1 各種携帯情報端末の小型・薄型化を実現 8Mb SRAM/32Mb擬似SRAM搭載MCP TH50WSP3580AASBTH50WSP3581AASB SRAM応用技術担当 045-890-2708 携帯電話をはじめとする携帯機器、情報


    Original     		PDF SRAM/32MbSRAMMCP TH50WSP3580AASB TH50WSP3581AASB SRAM045-890-2708 SRAM32 175m32 SRAM/32MbSRAM 64Mb-SRAM TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N