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    Panasonic Electronic Components 2SC4656JRL

    TRANS NPN 50V 0.05A SSMINI3
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    Quest Components 2SC4656JRL 1,194
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    Panasonic Electronic Components 2SC4655JCL

    RF TRANS NPN 20V 230MHZ SSMINI3
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    2SC465 Datasheets (71)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC465 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC465 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC465 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC465 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC465 Unknown Cross Reference Datasheet Scan PDF
    2SC465 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC465 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC465 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC465 Unknown Vintage Transistor Datasheets Scan PDF
    2SC465 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC465 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC465 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC4650 Sanyo Semiconductor Silicon NPN Transistor Original PDF
    2SC4650 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC4650 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4650 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4650 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4650 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4650 Sanyo Semiconductor Transistors for TV Display Video Output Use Scan PDF
    2SC4652 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC465 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4655J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0 to 0.02 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC4655J 2SC4655J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1791J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high-frequency amplification Complementary to 2SC4656J 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)


    Original     		PDF 2002/95/EC) 2SA1791J 2SC4656J

    2SA1786

    Abstract: 2SA1787 2SC4650 ITR04700 ITR04701 ITR04702
    Text: Ordering number:ENN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high


    Original     		PDF ENN3581 2SA1787/2SC4650 VCEO200V. 2SA1787/2SC4650] 2SA1786 2SA1786 2SA1787 2SC4650 ITR04700 ITR04701 ITR04702

    2SA179

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1791G ue pl d in an c se ed lud pl vi an m m es si


    Original     		PDF 2002/95/EC) 2SC4656G 2SA1791G 2SA179

    2SC4655J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 • Features Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC4655J 2SC4655J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of


    Original     		PDF 2002/95/EC) 2SC4655G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification, oscillation, mixing, and IF of FM/SAM radios • SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC4655G

    ITR04700

    Abstract: ITR04701 ITR04702 2SA1786 2SA1787 2SC4650
    Text: Ordering number:ENN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high


    Original     		PDF ENN3581 2SA1787/2SC4650 VCEO200V. 2SA1787/2SC4650] 2SA1786 ITR04700 ITR04701 ITR04702 2SA1786 2SA1787 2SC4650

    2SC4655

    Abstract: SC-75
    Text: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC4655 2SC4655 SC-75

    2SA1789

    Abstract: 2SC4653 2sa178
    Text: Inchange Semiconductor Product Specification 2SA1789 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SC4653 ·Low collector saturation voltage APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION 1 Base


    Original     		PDF 2SA1789 O-247 2SC4653 2SA1789 2SC4653 2sa178

    2sa1788

    Abstract: 2sa178 2SC4652
    Text: Inchange Semiconductor Product Specification 2SA1788 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SC4652 APPLICATIONS ·For audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SA1788 O-247 2SC4652 -120V; 2sa1788 2sa178 2SC4652

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob


    Original     		PDF 2002/95/EC) 2SC4656G 2SA1791G

    EN3581

    Abstract: 2SA1786
    Text: Ordering number:EN3581 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1787/2SC4650 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high


    Original     		PDF EN3581 2SA1787/2SC4650 VCEO200V. 2SA1787/2SC4650] 2SA1786 EN3581 2SA1786

    2SA1791J

    Abstract: 2SC4656J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 5˚ Symbol Rating


    Original     		PDF 2002/95/EC) 2SC4656J 2SA1791J SC-89 2SA1791J 2SC4656J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4655J Silicon NPN epitaxial planar type For high-frequency amplification M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm 1.60+0.05 –0.03 • Features 1 (0.375)


    Original     		PDF 2002/95/EC) 2SC4655J

    2SC4655

    Abstract: SC-75
    Text: Transistors 2SC4655 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Collector power dissipation


    Original     		PDF 2SC4655 2SC4655 SC-75

    2SA179

    Abstract: 2SA1791J 2SC4656J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4656J Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791J 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Unit: mm


    Original     		PDF 2002/95/EC) 2SC4656J 2SA1791J SC-89 2SA179 2SA1791J 2SC4656J SC-89

    2SA1791

    Abstract: 2SC4656
    Text: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V


    Original     		PDF 2SA1791 2SC4656 2SA1791 2SC4656

    2SC4658

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A


    OCR Scan     		PDF 2SC4658 2SA1794 Ta-25 2SC4658

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3581 2SA1787/2SC4650 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display _ Video Output Applications Features •High breakdown voltage : V c e o = 2 0 0 V • Small reverse transfer capacitance and excellent high frequency characteristic


    OCR Scan     		PDF 2SA1787/2SC4650 2SA1786

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SC4657

    Abstract: 723DC
    Text: SILICON NPN EPITAXIAL TYPE 2SC4657 HIGH CURRENT SWITCHING APPLICATIONS. U n i t in m m FEATURES: • Exellent hpE Linearity : h F E = 1 2 0 ~ 4 0 0 at V C E =1V, I C= 1 A • Low Collector Saturation Voltage : v c E s a t = 0 l 4 v (M a x -) at I c = 3 A . I b = 0 -1 5 a


    OCR Scan     		PDF 2SC4657 Ta-25 2SC4657 723DC

    transistor marking c rank Y

    Abstract: transistor marking AMq
    Text: Panasonic Transistor 2SC4656 Silicon NPN epitaxial planer type For high-frequency am plification Unit: mm C om ple m e ntary to 2 S A 1 791 • 1.6+0.15 0.4 0.8+0.1 0.4 Features • Small collector output capacitance Cob. • SS-Mini type package, allowing downsizing of the equipment


    OCR Scan     		PDF 2SC4656 2SA1791 transistor marking c rank Y transistor marking AMq

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A