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    Panasonic Electronic Components 2SC4627J0L

    RF TRANS NPN 20V 650MHZ SSMINI3
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    2SC4627 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4627 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC4627 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC4627 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4627 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4627 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC4627 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4627 Panasonic Transistor Selection Guide Scan PDF
    2SC4627B Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4627B Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4627C Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4627C Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4627D Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4627D Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC4627J Panasonic NPN Transistor Original PDF
    2SC4627J0L Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF 20VCEO 15MA SS-MINI Original PDF

    2SC4627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SC4627G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚


    Original     		PDF 2002/95/EC) 2SC4627J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SC4627G

    marking UD

    Abstract: 2SC4627
    Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4627 100MHz marking UD 2SC4627

    2SC4627J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03


    Original     		PDF 2002/95/EC) 2SC4627J 2SC4627J SC-89

    2SC4627

    Abstract: SC-89
    Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC4627 2SC4627 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open)


    Original     		PDF 2SC4627

    2SC4627

    Abstract: SC-75
    Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 0.4 Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20


    Original     		PDF 2SC4627 2SC4627 SC-75

    2SC4627

    Abstract: SC-75
    Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Collector power dissipation


    Original     		PDF 2SC4627 2SC4627 SC-75

    2SC4627G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2002/95/EC) 2SC4627G 2SC4627G

    2SC4627J

    Abstract: No abstract text available
    Text: Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4627J 2SC4627J

    2SC4627

    Abstract: No abstract text available
    Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC4627 2SC4627

    2SC4627J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚


    Original     		PDF 2002/95/EC) 2SC4627J SC-89 2SC4627J SC-89

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC4627

    2SC4627J

    Abstract: SC-89
    Text: Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


    Original     		PDF 2SC4627J SC-89 2SC4627J SC-89

    2SC4627G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SC4627G 2SC4627G

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency am plification U nit: mm • Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment


    OCR Scan     		PDF 2SC4627J 200MHz 100MHz

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2SC4614

    Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
    Text: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b


    OCR Scan     		PDF 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632 2SC4633 2SC4650 2SC4655 2SC4614 2SC4636 2SC4642

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency am plification • U nit: mm 0.4 Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment


    OCR Scan     		PDF 2SC4627

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398