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    ROHM Semiconductor

    ROHM Semiconductor 2SC4617TLS

    TRANS NPN 50V 0.15A EMT3
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    DigiKey 2SC4617TLS Digi-Reel 5,620 1
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    2SC4617TLS Reel 3,000 3,000
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    2SC4617TLS Reel 3,000
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    Avnet Silica 2SC4617TLS 16 Weeks 3,000
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    Win Source Electronics 2SC4617TLS 127,332
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    ROHM Semiconductor 2SC4617EBTLS

    TRANS NPN 50V 0.15A EMT3F
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    DigiKey 2SC4617EBTLS Digi-Reel 4,465 1
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    ROHM Semiconductor 2SC4617E3HZGTLQ

    TRANS NPN 50V 0.15A EMT3
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    DigiKey 2SC4617E3HZGTLQ Digi-Reel 2,811 1
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    Mouser Electronics 2SC4617E3HZGTLQ 11,805
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    Quest Components 2SC4617E3HZGTLQ 2,418
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    Ameya Holding Limited 2SC4617E3HZGTLQ 3,000 1
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    ROHM Semiconductor 2SC4617E3TLQ

    TRANS NPN 50V 0.15A EMT3
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    DigiKey 2SC4617E3TLQ Digi-Reel 2,687 1
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    Mouser Electronics 2SC4617E3TLQ 5,555
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    Quest Components 2SC4617E3TLQ 2,319
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    Ameya Holding Limited 2SC4617E3TLQ 50 1
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    ROHM Semiconductor 2SC4672T100P

    TRANS NPN 50V 2A MPT3
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    DigiKey 2SC4672T100P Cut Tape 1,864 1
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    2SC4672T100P Digi-Reel 1,864 1
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    Mouser Electronics 2SC4672T100P 169
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    Find more 2SC46 price and stock on Findchips.com

    2SC46 Datasheets (500)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SC46 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC46 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC46 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC46 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC46 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC46 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC46 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC46 Unknown Cross Reference Datasheet Scan PDF
    2SC46 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC460 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC460 Renesas Technology Silicon NPN Epitaxial Planar Original PDF
    2SC460 Renesas Technology Silicon NPN Epitaxial Planar Original PDF
    2SC460 Renesas Technology Silicon NPN Epitaxial Planar Original PDF
    2SC460 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SC460 Continental Device India TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),TO-92 Scan PDF
    2SC460 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC460 Unknown Scan PDF
    2SC460 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC460 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC460 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2SC46 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    ic 748

    Abstract: 2SC4688
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage


    OCR Scan     		2SC4688 ic 748 2SC4688 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1805 POW ER AM PLIFIER APPLICA TIO N S U n it in mm j 1 5 .8 ± 0 .5 | • C om p lem en tary to 2SC4690 • R ecom m end for 70W H ig h F id e lity A udio F req u en cy A m plifier •n 3.6 MAX { o u tp u t S tage. RATING


    OCR Scan     		2SA1805 2SC4690 --50m PDF

    2SC4658

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A


    OCR Scan     		2SC4658 2SA1794 Ta-25 2SC4658 PDF

    NPN VCEo 1000V

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC4686/4686A TV D Y N A M I C F O C U S A P P L I C A T I O N S . U n i t in m m H IG H V O L T A G E S W I T C H I N G A P P L I C A T I O N S . 10±0.3 , H IG H V O L T A G E A M P L I F I E R A P P L I C A T I O N S .


    OCR Scan     		2SC4686/4686A 2SC4686 2SC4686A NPN VCEo 1000V PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output


    Original     		2SA1805 2SC4690 2-16F1A PDF

    2SA1803

    Abstract: 2SC4688
    Text: JMnic Product Specification 2SA1803 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4688 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING see Fig.2


    Original     		2SA1803 2SC4688 2SA1803 2SC4688 PDF

    2SA1804

    Abstract: TO3PFM 2SC4689 Jmnic
    Text: JMnic Product Specification 2SA1804 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFM package ・Complement to type 2SC4689 APPLICATIONS ・Power amplifier applications ・Recommend for 55W high fidelity audio frequency amplifier output stage PINNING See Fig.2


    Original     		2SA1804 2SC4689 -120V 2SA1804 TO3PFM 2SC4689 Jmnic PDF

    2SA1804

    Abstract: 2SC4689
    Text: Product Specification www.jmnic.com 2SC4689 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFM package ・Complementary to 2SA1804 ・Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ・Power amplifier applications PINNING PIN


    Original     		2SC4689 2SA1804 2SA1804 2SC4689 PDF

    2SC3645

    Abstract: No abstract text available
    Text: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page


    OCR Scan     		2SA1257 2SA1415 2SA1418 2SA1419 2SA1552 2SA1682 2SA1700 2SA1740 2SA1772 2SA1773 2SC3645 PDF

    2SC4645

    Abstract: 2SA1785
    Text: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)


    OCR Scan     		EN3511A 2SA1785/2SC4645 2SA1785 2SC4645 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor 50V, 0.15A 2SA1774EB Applications General purpose small signal amplifier. Dimensions (Unit : mm) EMT3F Features 1) Excellent hFE linearity. 2) Complements the 2SC4617EB. 1.6 0.7 (1) 0.5 0.5 1.0 0.45 (3) 0.37 Structure


    Original     		2SA1774EB 2SC4617EB. R0039A PDF

    2SC4679

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4679 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4679 HDTV CHROM A OUTPUT APPLICATIONS. U nit in mm VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY. ¿3.1 ±0.1 5.8 • High Transition Frequency : fp = 240MHz • Small Collector Output Capacitance


    OCR Scan     		2SC4679 240MIIz PDF

    3701A

    Abstract: 2SC4632
    Text: Ordering num ber: EN 3701A 2SC4632 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications F e a tu r e s • High breakdown voltage V qeo min = 1200V . • Sm all Cob (typical Cob = 1.6pF). •Full-isolation package.


    OCR Scan     		2SC4632 3701A PDF

    marking C5

    Abstract: No abstract text available
    Text: UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 MARKING 2 3 C5 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATINGS


    Original     		2SC4617 2SA1774 OT-523 QW-R221-010 marking C5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.


    OCR Scan     		2SA1761 2SC4604. O-92MOD 100mA --75mA --10V, PDF

    2SC4662

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4662 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base


    Original     		2SC4662 O-220F O-220F) 2SC4662 PDF

    2SC4667

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4667 Features High transition frequency: fT = 400 MHz typ. Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25


    Original     		2SC4667 2SC4667 PDF

    npn smd 2a

    Abstract: 300V transistor npn 2a TRANSISTOR VCE 400V 500mA 2SC4616
    Text: Transistors SMD Type Silicon NPN Triple Diffused Type Transistor 2SC4616 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1


    Original     		2SC4616 O-252 100mA 500mA npn smd 2a 300V transistor npn 2a TRANSISTOR VCE 400V 500mA 2SC4616 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC4600 TO-263 1 .2 7 -0+ 0.1.1 Features Unit: mm Surface mount type device making the following possible. +0.1 1.27-0.1 +0.2 4.57-0.2 Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.


    Original     		2SC4600 O-263 2SC4600-applied PDF

    C4684

    Abstract: 2SC4684 IC-106 05A800
    Text: 2SC4684 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


    Original     		2SC4684 20070701-JA C4684 2SC4684 IC-106 05A800 PDF

    2SC4682

    Abstract: No abstract text available
    Text: 2SC4682 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4682 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)


    Original     		2SC4682 2SC4682 PDF

    2SC4666

    Abstract: No abstract text available
    Text: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)


    Original     		2SC4666 2SC4666 PDF

    T44E

    Abstract: "RF Power Amplifiers" 2SC4624 N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEA TU R ES • High power gain : Goe S 4.7dB, Po S 45W


    OCR Scan     		2SC4624 2SC4624 900MHz, 900MHz. 800-900MHz T-44E 900MHz T44E "RF Power Amplifiers" N15W z3 transistor transistor z3 RF NPN POWER TRANSISTOR 3 GHZ 5w PDF

    2SC4691J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01


    Original     		2002/95/EC) 2SC4691J SC-89 2SC4691J SC-89 PDF