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    2SC373 Search Results

    2SC373 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    2SC3735-T2B-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SC3739-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC3739-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC3734-T2B-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SC3734-T1B-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SC3736-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
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    2SC373 Price and Stock

    Rochester Electronics LLC 2SC3735-T1B-A

    SMALL SIGNAL BIPOLAR TRANSTR NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3735-T1B-A Bulk 2,859,102 2,029
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    Rochester Electronics LLC 2SC3736-T1-AZ

    SMALL SIGNAL BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3736-T1-AZ Bulk 19,478 1,249
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    • 10000 $0.24
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    Rochester Electronics LLC 2SC3731-T-A

    NPN SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3731-T-A Bulk 2,959
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    Rochester Electronics LLC 2SC3736-T2-AZ

    SMALL SIGNAL BIPOLAR TRANSTR NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3736-T2-AZ Bulk 1,249
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    NEC Electronics Group 2SC3735-T2B

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SC3735-T2B 3,000 8
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    • 10 $0.7125
    • 100 $0.4631
    • 1000 $0.1995
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    Quest Components 2SC3735-T2B 2,400
    • 1 $0.95
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    • 100 $0.95
    • 1000 $0.247
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    2SC373 Datasheets (132)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC373 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC373 Micro Electronics Low Level and General Purpose Transistors Scan PDF
    2SC373 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC373 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC373 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC373 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC373 Unknown Vintage Transistor Datasheets Scan PDF
    2SC373 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC373 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC373 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC373 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC373 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC373 Unknown Cross Reference Datasheet Scan PDF
    2SC373 Toshiba Japanese Transistor Data Book Scan PDF
    2SC3730 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3730 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3730 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3730 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3731 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3731 NEC Semiconductor Selection Guide Original PDF
    ...

    2SC373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC3736 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200


    Original
    PDF 2SC3736 Freq300M StyleSOT-89

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3739 SOT-23-3L TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage


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    PDF OT-23-3L 2SC3739 OT-23-3L 150mA 500mA 500mA,

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3738 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching For horizontal deflection output Unit: mm 4.0 Ratings Unit Collector to base voltage VCBO 1200 V Collector to emitter voltage VCEO 800 V Emitter to base voltage


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    PDF 2SC3738

    2SC3734LT1

    Abstract: na 50
    Text: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C


    Original
    PDF 2SC3734LT1 OT-23 1100MHz 300uS 2SC3734LT1 na 50

    Marking B12

    Abstract: B12 diode 2SA1464 2SC3739 B14 sot23
    Text: 2SC3739 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings Symbol V CEO V CBO V EBO


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    PDF 2SC3739 2SA1464 OT-23 350us, Marking B12 B12 diode 2SA1464 2SC3739 B14 sot23

    2SC3739

    Abstract: marking Y12
    Text: MCC 2SA1464   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO


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    PDF 2SA1464 2SC3739 OT-23 350us, 2SC3739 marking Y12

    Untitled

    Abstract: No abstract text available
    Text: 2SA1464 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • PNP Silicon Epitaxial Transistors High fT: fT=400 MHz Complementary to 2SC3739 Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage


    Original
    PDF 2SA1464 2SC3739 OT-23 350us,

    B34 transistor

    Abstract: 2SC3735 2SA1462 b35 sc-59 marking b34
    Text: データ・シート シリコン・トランジスタ Silicon Transistor 2SC3735 NPNエピタキシアル形シリコン・トランジスタ 高速度スイッチング用 特 外形図(単位:mm) 徴 ○スイッチング速度が速い。 2.8±0.2


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    PDF 2SC3735 SC-59) 2SA1462 D19098JJ2V0DS002 TC-5922 D19098JJ2V0DS00 B34 transistor 2SC3735 2SA1462 b35 sc-59 marking b34

    Untitled

    Abstract: No abstract text available
    Text: 2SC3738 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.2k I(C) Max. (A)10 Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)800m


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    PDF 2SC3738 Freq10MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SC3732M Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)


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    PDF 2SC3732M Freq750M

    Untitled

    Abstract: No abstract text available
    Text: 2SC3734 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.


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    PDF 2SC3734 Freq300M

    1S955

    Abstract: 2SA1458 2SC3731
    Text: ST 2SC3731 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be


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    PDF 2SC3731 2SA1458 300ns 1S955 1S955 2SC3731

    2SC3736

    Abstract: hFE CLASSIFICATION Marking
    Text: Transistors SMD Type NPN Silicon Epitaxia 2SC3736 Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 45


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    PDF 2SC3736 500mA -100mA 2SC3736 hFE CLASSIFICATION Marking

    75150 PC

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3739 Features • • NPN Silicon Epitaxial Transistors High Gain Bandwidth Product: fT=200 MHz Min. Complementary to 2SA1464 Maximum Ratings


    Original
    PDF 2SC3739 2SA1464 OT-23 40Vdc 150NCHES 350us, 75150 PC

    2SC3739

    Abstract: 2SA1464 marking 1BW 1BW MARKING 1bws
    Text: SEC j m ^ T i x t n '> 1J =3 > Silicon T ran sisto r A 2SC3739 NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching ^/FEATUR ES ^ 0 / P A C K A G E DIMENSIONS Unit : mm O f f iJ U ? Æ (i b t i > ), • A 'i "/ - f > 7 , Í & J S ?£ W M t£ ¿ " ) i i & H 4 - 0


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    PDF 2SA1464 2SC3739 marking 1BW 1BW MARKING 1bws

    cm 2000 mk II

    Abstract: d1352 2SC3731
    Text: Silicon T ran sistor 2SC3731 N n P N X ¡ ¿ f l F 'ì s ' T J U U 3 > h v > ï> * 9 # i j £ • mm O X ^ o ? - y f- > r i i æ ^ Ü ^ o 4.0 ±0.2 u ? O z i] / ? t 'o O 2SA 1458Ì = |> 7 °U y > 9 Ut f l f ë ! . . 5 i t . 0.45 (T M a = 25 °C ) «&


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    PDF Q2SA1458Ã D13522JJ4V0DS00 TC-5932B) 2SC3731 cm 2000 mk II d1352 2SC3731

    1S955

    Abstract: 2SA1458 2SC3731
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC3731 The 2SC3731 is designed for general purpose amplifier and high PACKAGE DIMENSIONS speed switching applications. FEATURES • in millimeters inches 4 .2 MAX. (0.165 MAX.) High Frequency Current Gain. 2.2 MAX.


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    PDF 2SC3731 2SA1458 1S955 X1S955

    lkt 108

    Abstract: 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE • 2SC3735 _ HIGH SPEED SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURE PACKAGE DIMENSIONS in millimeters • High Speed: t on < 1 2 ns t0ff < 18 ns 2 .8 ± 0.2 0-65 ±8:ls 1.5 ABSOLUTE MAXIMUM RATINGS


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    PDF 10-1BI= 10-1B2 2SC3735 NECTOKJ22686 lkt 108 101B2 hFE CLASSIFICATION Marking B35 B34 transistor marking IAY 2SC3735 TZ marking transistor b35 NEC B34

    2SC373

    Abstract: 2SC734 2SC1330 2SC923 2SC1000 2SC400 TO-92B 2SC1327 2SC735 2sc539
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS H,'E Ic VcEO mW (mA) (V) min mas VcE (mA) (V) C* N.F. fx max lc mm max mas (V) (mA) (MHz) (MHz) (dB) 2SC316 2SC372 2SC373 2SC380 2SC400 N N N N N TO-18 TO-92B TO-92B TO-92B


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    PDF 2SC316 2SC372 2SC373 2SC380 2SC400 2SC454 2SC536 2SC537 2SC538 2SC538A 2SC734 2SC1330 2SC923 2SC1000 TO-92B 2SC1327 2SC735 2sc539

    ge330

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SC3739 HIGH FREQUENCY AMPLIFIER AND SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim e te rs • High G ain B a ndw idth P rodu ct: f-f- = 200 M H z M IN . • C om plem entary to 2S A 1464


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    PDF 2SC3739 ge330

    GE-323

    Abstract: No abstract text available
    Text: SILICON TRA N SISTO R 2SC3734 HIGH FR EQ U EN CY A M P LIFIER NPN SILICO N EP ITA X IA L TR A N SISTO R MINI MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed: tstg < 200 ns • Complementary to 2SA 1461 0 .6 5 if t f s ABSOLUTE MAXIMUM RATINGS


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    PDF 2SC3734 111-I GE-323

    JT MARKING

    Abstract: 2SA1462 2SC3735
    Text: SEC j i v r x 'J =3 > 7. ? h Silicon T ra n sisto r A 2SC3735 N P N Silicon Epitaxial T ra n sisto r H igh Sp e e d Sw itch in g ¡tfS/FEA TU R ES ^ 0 /P A C K A G E D IM E N S IO N S Unit : mm o 7 n { 7 -f- y 2 . 8 + 0 .2 o Ji'. O a u 7 O 2S A 1462 t 9 > 9 'J


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    PDF 2SA1462 JT MARKING 2SC3735

    2SC3737

    Abstract: No abstract text available
    Text: Power T ransistors 2SC37371 2SC3737 Silicon PNP Triple-Diffused Planar Type • Package Dimensions High Speed Switching Horizontal Deflection Output U nit mm’ 5.2max. 15.5max. 6.9min. ■ Features 3'.2‘ -ip • High speed switching 1 • Wide area of safety operation and high breakdown voltage


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    PDF 2SC3737t 2SC3737 -250V bT32flS2 2SC3737

    2SC3734

    Abstract: odv marking
    Text: NEC Ì ^ Silicon Tran sistor f / \ f 7 2SC3734 n p n i e ¡ u n ì & 9 * ì/ ~ n v W m m & £ 9 iis i; zi v b v ' ^ m j g X ' i ' y * > 7 ' m NPN Silicon Epitaxial Transistor High Frequency Amplifier and Switching »«/FEA TU RES PACKAGE DIMENSIONS U nit : m m


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    PDF 2SA14611 2SC3734 odv marking