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    2SC343 Datasheets (87)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC343 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC343 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC343 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC343 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC343 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC343 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC343 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC3430 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3430 Unknown Cross Reference Datasheet Scan PDF
    2SC3430 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3430 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3430 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3431 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3431 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3431 Unknown Cross Reference Datasheet Scan PDF
    2SC3431 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3431 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3431 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3431 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3432 NEC Semiconductor Selection Guide 1995 Original PDF

    2SC343 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC3437

    Abstract: No abstract text available
    Text: 2SC3437 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3437 ○ 超高速度スイッチング用 ○ 電子計算機用, カウンタ用 単位: mm • トランジション周波数が高い。 : fT = 400 MHz (標準) •


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    2SC3437 O-236MOD SC-59 2SC3437 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage


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    2SA1368 -100V -800mA) 500mW 2SC3438 -10mA -150mA -15mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1369 Features High Collector Current ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage


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    2SA1369 500mW 2SC3439 -500mA -20mA PDF

    2SA1369

    Abstract: G marking smd transistor 1A 9 g400h smd transistor 2sc3439 transistor smd marking H 2SC3439 SMD BR BR SMD IC 2SC3439 1a
    Text: Transistors SMD Type Plunger Drive Applications 2SA1369 Features High Collector Current ICM = -3A, IC = -1.5A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage


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    2SA1369 500mW 2SC3439 Cut--20 -500mA -20mA 2SA1369 G marking smd transistor 1A 9 g400h smd transistor 2sc3439 transistor smd marking H 2SC3439 SMD BR BR SMD IC 2SC3439 1a PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3435 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SC3435 Freq30M PDF

    SMD BR

    Abstract: 2sc3438 2sc343 2SA1368 smd b_r
    Text: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25


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    2SA1368 -100V -800mA) 500mW 2SC3438 -10mA -150mA -15mA SMD BR 2sc3438 2sc343 2SA1368 smd b_r PDF

    2SC343

    Abstract: 2SC3437 HIGH SPEED SWITCHING NPN SOT23
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3437 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High speed switching time: tstg = 15 ns typ . 0.55 Low saturation voltage: VCE (sat) = 0.3 V (max). +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency: fT = 400 MHz (typ).


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    2SC3437 OT-23 2SC343 2SC3437 HIGH SPEED SWITCHING NPN SOT23 PDF

    2SC3437

    Abstract: No abstract text available
    Text: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)


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    2SC3437 2SC3437 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC3437 TRANSISTOR NPN SOT–23 FEATURES  High Transition Frequency  Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 2SC3437 100mA PDF

    transistors marking HJ

    Abstract: SMD BR 17 smd transistor marking hg smd transistor 1800 HG marking smd transistor 2sc3439 2SC3439 marking H-G hFE CLASSIFICATION Marking markING HG
    Text: Transistors SMD Type Small Signal Transistor 2SC3439 Features High hFE=400 to 1800. High collector current Icm=3A,Ic=1.5A High collector dissipation Pc=500mW Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) Small package for mounting. Absolute Maximum Ratings Ta = 25


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    2SC3439 500mW 500mA -10mA transistors marking HJ SMD BR 17 smd transistor marking hg smd transistor 1800 HG marking smd transistor 2sc3439 2SC3439 marking H-G hFE CLASSIFICATION Marking markING HG PDF

    2SC3437

    Abstract: No abstract text available
    Text: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.)


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    2SC3437 2SC3437 PDF

    2SC3437

    Abstract: transistor marking c y
    Text: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.)


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    2SC3437 2SC3437 transistor marking c y PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3434 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SC3434 Freq30M PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    2SC3437

    Abstract: No abstract text available
    Text: TO SH IBA 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3437 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS • • • + 0.5 2 .5 -0 .3 High Transition Frequency frp= 400MHz (Typ.) Low Saturation Voltage


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    2SC3437 400MHz 2SC3437 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3437 U ni t i n mm + 0.5 2.5 - 0.3 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. • High T r a n s i t i o n F requency • Low S a t u r a t i o n V o l ta g e • High Speed S w it c h i n g Time


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    2SC3437 400Mllz 100mA PDF

    2SC3437

    Abstract: 42kO
    Text: TOSHIBA 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3437 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS • • • + 0.5 High Transition Frequency frp= 400MHz (Typ.) Low Saturation Voltage v CE(sat) = °-3V (Max.)


    OCR Scan
    2SC3437 400MHz 2SC3437 42kO PDF

    2SC3439 1a

    Abstract: 02n transistor 2SC3439 15A transistor
    Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC3439 FOR SMALL TYPE MOTOR PLUNGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3439 is a silicon NPN epitaxial type transistor designed with high OUTLINE DRAWING Uni, mm collector dissipation,high collector current, high hFE.


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    2SC3439 2SC3439 2SA1369. 500mW 2SC3439 1a 02n transistor 15A transistor PDF

    2SC4290A

    Abstract: C 4927 2SD2356 2SC4289 2SD1407 4894 4902 2SC3997 2SC4289A 2SC4911K
    Text: - 202 - S € Type No. 4t £ Manuf. -M H SANYO B TOSHIBA m NEC B AL HITACHI « ± a F U JIT S U fâ T MATSUSHITA 2SC3052 2SC 4894 të T 2SC4453 2SC343Î 2SC 4895 □—A 2SD1828 2SD1407 2SC 4896 S tL 2SC 4897 B tL 2SC3997 2SC4290A 2SC 4898 fâ T 2SC3750 2SC3310


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    2SC4453 2SC343Ã 2SC3052 2SC4911K 2SD1828 2SD1407 2SD2161 2SD2113 2SD1633 2SC4289A 2SC4290A C 4927 2SD2356 2SC4289 4894 4902 2SC3997 2SC4289A 2SC4911K PDF

    D1647

    Abstract: sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645
    Text: - 246 - £ m *t % Marmi. T ype No. 2SD 1621 ^ H n e SANYO * M £ T O SHIBA □ P 'Ss m. NEC 2SD1898 2SC4357 2SC4672 2SD2403 2SD1119 2SC3438 2SD1834 ¥ 2SC2873 2SD 1624 / ¥ 2SC4541 2SD 1625 $ ^ 2SD 1631 2SD 1632 2SD 1633 ^ 2SD 1634 2SD 1636 2S0 1637 2SD1368


    OCR Scan
    2SD1621 2SD1622 2SD1623 2SD1624 2SD1625 2SD1626 2SD1627 2SD1628 2SD1629 2SD1630 D1647 sd 1651 2SD1651 2SD1834 2SD1930 2SC3439 2SC3616 d1651 2SD689 2SD1645 PDF

    2SC3445

    Abstract: 2SC3432 2SA1371 2SC3435 2sc3468 2SC3434 2SC3437 2SC3438 2SC3439 2SC3440
    Text: - - 158 m Ta=25°C, *Ep(áTc=25<C > m *± % m % & (V (V) IC (D C ) Pe Pe* (A) (W) (W) Ic (A) Ib (A) 1.5 3 10 100 100 400 10 60 5 i 1 1.5 5 1 15 120 100 400 10 60 5 1.5 1 1.5 7.5 1.5 1 HV HS PSW 500 400 2SC3435 s n HV HS PSW 500 400 G PD (V) 1 B U 2SC3440


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    2SC3432 2SC3434 2SC3435 2SC3437 2SC3438 2SC3439 2SC3440 2SC3460 2SC3461 2SC3465 2SC3445 2SA1371 2sc3468 2SC3439 PDF

    40w amplifier

    Abstract: 2sc3438 mitsubishi vcb 25M SC-62
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3438 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3438 is a silicon NPN epitaxial type transistor designed for OUTLINE DRAWING unit mm power supply, 20 to 40W output low frequency power amplifier drive application.


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    2SC3438 2SC3438 2SA1368. 800mA) 130MHz 500mW SC-62 40w amplifier mitsubishi vcb 25M SC-62 PDF

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


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    O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF