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    2SC339 Search Results

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    2SC339 Price and Stock

    Rochester Electronics LLC 2SC3393T-AC-ON

    NPN EPITAXIAL PLANAR SILICON
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    DigiKey 2SC3393T-AC-ON Bulk 5,000 2,664
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    Rochester Electronics LLC 2SC3399

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    DigiKey 2SC3399 Bulk 6,662
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    Rochester Electronics LLC 2SC3399-AC

    TRANS PREBIAS NPN 50V 0.1A
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    DigiKey 2SC3399-AC Bulk 952
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    onsemi 2SC3395-TB-E

    - Bulk (Alt: 2SC3395-TB-E)
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    Newark 2SC3395-TB-E Bulk 16,030
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    Rochester Electronics 2SC3395-TB-E 1,023,000 1
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    onsemi 2SC3398-TB-E

    Transistor NPN 50V 100mA 3-Pin CP - Bulk (Alt: 2SC3398-TB-E)
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    Avnet Americas 2SC3398-TB-E Bulk 4 Weeks 1,687
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    Newark 2SC3398-TB-E Bulk 1,690
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    Rochester Electronics 2SC3398-TB-E 311,997 1
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    Find more 2SC339 price and stock on Findchips.com

    2SC339 Datasheets (116)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC339 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC339 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC339 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC339 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC339 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC339 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC339 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC339 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC339 Unknown Cross Reference Datasheet Scan PDF
    2SC3390 Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3390 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC3390 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3390 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3390 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3390 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3390 Unknown Cross Reference Datasheet Scan PDF
    2SC3390B Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3390B Renesas Technology Silicon NPN Epitaxial Transistor Original PDF
    2SC3390C Hitachi Semiconductor Silicon NPN Epitaxial Original PDF
    2SC3390C Renesas Technology Silicon NPN Epitaxial Transistor Original PDF

    2SC339 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA002755

    Abstract: No abstract text available
    Text: 2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC3391 Hitachi DSA002755

    2SA1338

    Abstract: marking ay marking al 2SC3392
    Text: Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT.


    Original     		PDF EN1421A 2SA1338/2SC3392 2SA1338/2SC3392] 2SA1338 2SA1338 marking ay marking al 2SC3392

    2SA1339

    Abstract: 2sc3393 mt 1392
    Text: Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions • Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO= – 50V.


    Original     		PDF EN1392A 2SA1339/2SC3393 2SA1339/2SC3393] 2SA1339 2SA1339 2sc3393 mt 1392

    Untitled

    Abstract: No abstract text available
    Text: 2SC3398 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.


    Original     		PDF 2SC3398 Freq250M resistor10k

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392-4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200


    Original     		PDF 2SC3392-4 Freq300M

    Untitled

    Abstract: No abstract text available
    Text: 2SC3391 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.5u @V(CBO) (V) (Test Condition)


    Original     		PDF 2SC3391 Freq450M

    2SC3391

    Abstract: 2SC535 Hitachi DSA00233
    Text: 2SC3391 Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage


    Original     		PDF 2SC3391 2SC3391 2SC535 Hitachi DSA00233

    smd marking AY

    Abstract: 2SC3392
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High breakdown voltage : VCEO=50V. 0.55 Adoption of FBET process. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Large current capacitiy and high fT.


    Original     		PDF 2SC3392 OT-23 100mA 10IB1 -10IB2 smd marking AY 2SC3392

    DTC144E

    Abstract: 2SC3399 HC144E KSR1204
    Text: N PN 汕头华汕电子器件有限公司 D I G I TAL TRANSISTOR 对应国外型号 DTC144E,2SC3399,KSR1204 HC144E █ 主要用途 █ 外形图及引脚排列 开关接口电路等。 █ 极限值（Ta=25℃） TO-92S T stg ——贮存温度………………………………… -55~150℃


    Original     		PDF DTC144E 2SC3399 KSR1204 HC144E O-92S 300mW 100mA 10AIE HC144E KSR1204

    2SA1338

    Abstract: 2SC3392 ITR05058
    Text: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.


    Original     		PDF ENN1421B 2SA1338/2SC3392 2SA1338 2SC3392 2018B 2SA1338/2SC3392] 2SA1338 2SC3392 ITR05058

    2SC3393

    Abstract: 2SA1339
    Text: 2SA1339 / 2SC3393 Ordering number : EN1392C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1339 / 2SC3393 High-Speed Switching Applications Features • • • • Ultrasmall-sized package permitting sets to be smallsized,slim. High breakdown voltage : VCEO= – 50V.


    Original     		PDF EN1392C 2SA1339 2SC3393 2SA1339 2SC3393

    Untitled

    Abstract: No abstract text available
    Text: 2SC3392-7 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.280 h(FE) Max. Current gain.560


    Original     		PDF 2SC3392-7 Freq300M

    M338

    Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
    Text: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT


    OCR Scan     		PDF 2SA1338/2SC3392 2SA1338 60fficers M338 J300j nj037 2SC3392 marking al WA1 marking M338 NPN

    2sc710

    Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
    Text: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-


    OCR Scan     		PDF 2SC4641 2SC1815 2SCS29 2SC174w 2SC3393 2SC366 2SC4455 2sc710 2sc1741 2SC380 2sc944 2sC1674 2SC1815 2SC931

    Untitled

    Abstract: No abstract text available
    Text: 2SC3391 Silicon NPN Epitaxial Planar HITACHI Application V H F amplifier, M ixer, Local oscillator Outline SPAK 1 r 1 3 1. Emitter 2. Collector 3. Base 481 2SC3391 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO


    OCR Scan     		PDF 2SC3391 2SC3391 2SC535.

    Untitled

    Abstract: No abstract text available
    Text: H ITACH I 2SC3390 S IL IC O N N P N E P IT A X IA L „ <2U«i. _ LOW FREQUENCY LOW NOíSS AMPLIFIER •HF AMPLIFIE« jJ BiKri il i‘ ji. :j 1 „ K M < l l U ü t. 1 * * Ç-.I ¡i lì ¡ 3Í *. Cv-ìf» •’>* 1*11 î l a* iS P A K I ABSOLUTE MAXIMUM RATINGS Ta=25T )


    OCR Scan     		PDF 2SC3390 2SC4580

    2SA1341

    Abstract: 2SC3395 transistors marking HJ k 2059 TRANSISTOR LCH10 BU 2058 SANYO CP TA RESISTOR 22E 1W transistor npn d 2058
    Text: SANYO SEMI CONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T -3 S -U PN P/N P N Epitaxial Planar S ilico n Transisto rs ♦ 2 0 1 8A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.


    OCR Scan     		PDF 2SA1341, 2SC3395 r-37-13 T-3S-11 1233C 47kfl, 47kfi) 2SA1341 2SA1341 2SC3395 transistors marking HJ k 2059 TRANSISTOR LCH10 BU 2058 SANYO CP TA RESISTOR 22E 1W transistor npn d 2058

    A1345

    Abstract: 2SC3399 2SA1345 2sc339
    Text: Ordering num ber: EN 1 2 8 7 C i 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistance i A pplicationi Switching circuit, inverter, interface circuit, driver Feature» ► Built-in bias resistor (R*j=47k£l,


    OCR Scan     		PDF 1287C 2SA1345/2SC3399 47kft) 2SA1345 A1345 2SC3399 2sc339

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V


    OCR Scan     		PDF 2SA1339/2SC3393 2SA1339 3197KI/1114KI

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR 2SA1341, 2SC3395 CORP E2E I> • TTìTOTb 0007325 S ■ T-37-13 T - 3 S - U ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistances R1=47kO, R2=47kiì 1233C Applications • Switching circuit, inverter circuit, interface circuit, driver circuit.


    OCR Scan     		PDF 2SA1341, 2SC3395 T-37-13 1233C 47kfi) 2SA1341

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1287C 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications _ with Bias Resistance Applications Switching circuit, inverter, interface circuit, driver Features • Built-in bias resistor (R i=47ki2, R2=47kiî).


    OCR Scan     		PDF 1287C 2SA1345/2SC3399 47ki2, 2SA1345 rO-92 3C-43

    C3656

    Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
    Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)


    OCR Scan     		PDF 11-sized 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 C3656 C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396

    MARKING AL

    Abstract: 2SA1338
    Text: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>


    OCR Scan     		PDF 2SA1338/2SC3392 2SA1338 1114KI 1338/2S MARKING AL 2SA1338

    XM21A

    Abstract: C-160304 2SA1338 2SC3392 A1338 00B7
    Text: SANYO SEMICONDUCTOR CO RP 22E D 2SA1338, 2SC3392 • 7 ‘n7Q7fci 0 Q 0 7 0 4 Ö Q ■ T-37-15 T-3S-U P N P /N PN Epitaxial Planar Silicon Transistors 2018A High-Speed Switching Applications Features • Adoption of FBET process • High breakdown voltage; VCEO= ->50V


    OCR Scan     		PDF 2SA1338, 2SC3392 2018a XM21A 2SA1338 XM21A C-160304 2SA1338 A1338 00B7