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    2SC3355, NPN Search Results

    2SC3355, NPN Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
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    2SC3355, NPN Price and Stock

    Mencom Corporation MDC-4FP-5M-R-NPN

    MDC - NPN Lighted - Cordset - 4 Pole - Female Right Angle - 5M - 4A - Yellow - PVC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-4FP-5M-R-NPN
    • 1 $37.32
    • 10 $32.69
    • 100 $28.99
    • 1000 $28.23
    • 10000 $28.23
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    Mencom Corporation MDC-4FP-2M-R-NPN

    MDC - NPN Lighted - Cordset - 4 Pole - Female Right Angle - 2M - 4A - Yellow - PVC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-4FP-2M-R-NPN
    • 1 $33.31
    • 10 $31.1
    • 100 $26.27
    • 1000 $25.16
    • 10000 $25.16
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    Mencom Corporation MDC-3FP-5M-R-NPN

    MDC - NPN Lighted - Cordset - 3 Pole - Female Right Angle - 5M - 4A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MDC-3FP-5M-R-NPN
    • 1 $49.31
    • 10 $42.5
    • 100 $37.81
    • 1000 $37.25
    • 10000 $37.25
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    Mencom Corporation NAN-T-3FP-5M-R-NPN

    NAN - NPN Lighted - Cordset - 3 Pole - Female Right Angle - 5 Meters - 3A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NAN-T-3FP-5M-R-NPN
    • 1 $38.41
    • 10 $33.64
    • 100 $29.84
    • 1000 $29.05
    • 10000 $29.05
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    Mencom Corporation NAN-T-3FP-2M-R-NPN

    NAN - NPN Lighted - Cordset - 3 Pole - Female Right Angle - 2 Meters - 3A - Yellow - PVC - Nickel Plated Brass
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NAN-T-3FP-2M-R-NPN
    • 1 $31.47
    • 10 $29.39
    • 100 $24.82
    • 1000 $23.78
    • 10000 $23.78
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    Find more 2SC3355, NPN price and stock on Findchips.com

    2SC3355, NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc3355

    Abstract: NPN transistor to-92 2SC3355L 2sc3355g
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER „ FEATURES * Low Noise and High Gain * High Power Gain 1 TO-92 „ ORDERING INFORMATION Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B


    Original     		PDF 2SC3355 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R 2SC3355G-T92-B 2SC3355G-T92-K 2sc3355 NPN transistor to-92 2SC3355L 2sc3355g

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR H I GH FREQU EN CY LOW N OI SE AM PLI FI ER ̈ FEAT U RES * Low Noise and High Gain * High Power Gain 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Normal 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R


    Original     		PDF 2SC3355 2SC3355-T92-B 2SC3355-T92-K 2SC3355-T92-R 2SC3355L-T92-B 2SC3355L-T92-K 2SC3355L-T92-R 2SC3355G-T92-B 2SC3355G-T92-K 2SC3355G-T92-R

    2SC3355

    Abstract: transistor 2sc3355 and application PA33 marking PA33
    Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS


    Original     		PDF 2SC3355 2SC3355 transistor 2sc3355 and application PA33 marking PA33

    transistor 2sc3355 and application

    Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.


    Original     		PDF 2SC3355 2SC3355 2SC3355-T PU10208EJ01V0DS transistor 2sc3355 and application transistor 2sc3355 and application NOTICE 2SC3355, npn 2SC3355-T PA33

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC3355 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER Package: TO-92 DESCRIPTION Low noise amplifier at VHF,UHF and CATV band. It has lange dynamic range and good current characteristic.


    Original     		PDF 2SC3355

    2SC3355

    Abstract: 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR
    Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING


    Original     		PDF 2SC3355 QW-R201-036 2SC3355 2SC3355, npn F10G NPN SILICON EPITAXIAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER  FEATURES 1 * Low Noise and High Gain * High Power Gain  TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B


    Original     		PDF 2SC3355 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K QW-R201-036

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER SYMBOL RATING


    Original     		PDF 2SC3355 QW-R201-036

    2Sc3355

    Abstract: 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz


    Original     		PDF 2SC3355 S22e-FREQUENCY S21e-FREQUENCY S12e-FREQUENCY 2Sc3355 3094 transistor transistor s11 s12 s21 s22 transistor k 0247 634 transistor 647 transistor RF Transistor s-parameter transistor 647 7338 transistor NPN transistor mhz s-parameter

    transistor 2sc3355 and application

    Abstract: 2sc3355 2SC3355, npn
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF PU10208EJ01V0DS 2SC3355 transistor 2sc3355 and application 2sc3355 2SC3355, npn

    NE56755

    Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S NE56755 BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    TDA3541

    Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A
    Text: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF TIP115 O-220 79L09AC, SS9012D TIP126 79L12AC, SS9012E TIP41C TDA3541 tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    transistor NEC D 822 P

    Abstract: transistor NEC B 617
    Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS in millimeters inches


    OCR Scan     		PDF 2SC3355 2SC3355 transistor NEC D 822 P transistor NEC B 617

    transistor NEC D 822 P

    Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
    Text: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.


    OCR Scan     		PDF 2SC3355 2SC3355 transistor NEC D 822 P NEC D 822 P transistor NEC D 587 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p

    2SC752G-TM

    Abstract: 2sc945q 2SC3199Y 2SC3355 2SC383TM 2SC458B 2SC458C 2SC458D 2SC460 2SC460A
    Text: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC38BAT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC752G-TM 2sc945q 2SC458B 2SC458C 2SC458D 2SC460 2SC460A

    2SC536E

    Abstract: 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM 2SC3355
    Text: TO-92 Plastic Package Transistors NPN Maxi mum F atings Type No. ^CB V CEi ^EBO (V) Min (V) Min Min 2SC3199Y 50 50 5 2SC3355 20 12 2SC383TM 50 2SC388AT Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pp <c (W) (A) @Tc=25°c hFE e *CBO ^CB


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388AT 2SC763 2SC9022 rO-92-1 2SC945 2SC536E 2SC536G 2SC458C 2SC460B 2SC536F 2SC458D 2SC945P 2SC945Q 2SC752G-TM

    2SC460B

    Abstract: 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC3199Y 2SC3355 2SC458
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) *c (A) @ & (mA) f, c* @ 'c (mA) fes c„ Freq CDIL (MHz) (pF) Case Max Style ^CBO ^CES> V EB0 (V) Min (V) Min (V) Min 2SC3199Y


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC388ATK 2SC752GTM1 2SC460B 2SC458C 2SC458D 2sc945q 2SC763 2SC752G-TM 2SC536F 2SC458

    2SC458D

    Abstract: 2SC460B 2sc945p 2SC536G 2SC536F 2SC458C 2SC752G-TM 2SC536E 2SC3199Y 2SC458B
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25”C, Unless Otherwise Specified) 'c (W) (A) @Tc=25"< 'cBO ^CE V @ Ic & (mA) *^CE ^BE(SAT) 'c (V) Max @ (mA) c* \ 'c (mA) nf @ Freq c „ (MHz) (PF) Max CDIL


    OCR Scan     		PDF 2SC3199Y O-92-1 2SC3355 2SC383TM 2SC38BATH 2SC763 2SC9022 2SC458D 2SC460B 2sc945p 2SC536G 2SC536F 2SC458C 2SC752G-TM 2SC536E 2SC458B

    NEC NE85635

    Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
    Text: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is


    OCR Scan     		PDF NE856 NEC NE85635 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 sot23 41 NE85635

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


    OCR Scan     		PDF NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563

    2SC3357

    Abstract: 2sc3355 NE8563S
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST 00 CHIP 35 (MICRO-X) DESCRIPTION f The NE856 series of NPN epitaxial silicon transistors is


    OCR Scan     		PDF NE856 OT-89) 2SC3357 2sc3355 NE8563S