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    2SC288 Search Results

    2SC288 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SC2885-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SC288 Price and Stock

    Toshiba America Electronic Components 2SC2881-Y(TE12L,ZC

    PB-F POWER TRANSISTOR PW-MINI PC
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    DigiKey 2SC2881-Y(TE12L,ZC Reel 3,000 1,000
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    2SC2881-Y(TE12L,ZC Cut Tape 1,008 1
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    2SC2881-Y(TE12L,ZC Digi-Reel 1
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    Mouser Electronics 2SC2881-Y(TE12L,ZC 6,269
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    Verical 2SC2881-Y(TE12L,ZC 5,000 350
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    2SC2881-Y(TE12L,ZC 518 350
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    2SC2881-Y(TE12L,ZC 396 63
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    Quest Components 2SC2881-Y(TE12L,ZC 5,214
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    Chip1Stop 2SC2881-Y(TE12L,ZC Cut Tape 396
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    Micro Commercial Components 2SC2881-O-TP

    TRANS NPN 120V 0.8A SOT89
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    DigiKey 2SC2881-O-TP Reel 20,000
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    Micro Commercial Components 2SC2883-O-TP

    TRANS NPN 30V 1.5A SOT89
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    Micro Commercial Components 2SC2883-Y-TP

    TRANS NPN 30V 1.5A SOT89
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    Micro Commercial Components 2SC2881-Y-TP

    Interface
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    Mouser Electronics 2SC2881-Y-TP
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    Find more 2SC288 price and stock on Findchips.com

    2SC288 Datasheets (171)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC288 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC288 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC288 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC288 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC288 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC288 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC288 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC288 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC288 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC288 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC288 Unknown Cross Reference Datasheet Scan PDF
    2SC2880 Kexin High Voltage Switching Applications Original PDF
    2SC2880 Toshiba NPN Transistor Original PDF
    2SC2880 Unknown Scan PDF
    2SC2880 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2880 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2880 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2880 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2880 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2880 Unknown Japanese Transistor Cross References (2S) Scan PDF
    ...

    2SC288 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1201

    Abstract: 2SC2881
    Text: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF 2SC2881 120MHz 2SA1201 100mA 500mA 2SA1201 2SC2881

    2SC2881L

    Abstract: 032 b
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION


    Original     		PDF 2SC2881 120MHz 2SA1201 OT-89 2SC2881L-x-AB3-R 2SC2881G-x-AB3-R OT-89 QW-R204-032 QW-R208-032 2SC2881L 032 b

    power transistor audio amplifier 500 watts

    Abstract: 2SA1203 smd diode 03A 2SC2883
    Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2883 Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		PDF 2SA1203 2SC2883 -10mA -500mA power transistor audio amplifier 500 watts 2SA1203 smd diode 03A 2SC2883

    2SA1204

    Abstract: 2SC2884
    Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SC2884 2SA1204 2SA1204 2SC2884

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1202 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1202 2SC2882 -10mA -50mA -200mA -20mA

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1204 2SC2884 -100mA -700mA -500mA -20mA -10mA

    2SA1201

    Abstract: 2SC2881
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		PDF 2SC2881 2SA1201 2SA1201 2SC2881

    marking V0 SOT-89

    Abstract: 2SC2881
    Text: MCC TM Micro Commercial Components 2SC2881-O 2SC2881-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


    Original     		PDF 2SC2881-O 2SC2881-Y OT-89 OT-89 marking V0 SOT-89 2SC2881

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier


    Original     		PDF OT-89-3L OT-89-3L 2SC2884 2SA1204 100mA 700mA 500mA

    types of transistors

    Abstract: nec 350 C 2SC2885 2SC2946 C11531E
    Text: DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946 1 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC


    Original     		PDF 2SC2885, 2SC2946 2SC2885 C11531E types of transistors nec 350 C

    2SC2882

    Abstract: 2SA1202 ic 400
    Text: 2SC2882 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2882 ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 30~35 W 用アンプのドライバに適します。 • 小型フラットパッケージでハイブリッド IC 組み立て用に適します。


    Original     		PDF 2SC2882 2SA1202 SC-62 2SC2882 2SA1202 ic 400

    Untitled

    Abstract: No abstract text available
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		PDF 2SC2881 2SA1201

    Untitled

    Abstract: No abstract text available
    Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SC2884 2SA1204 SC-62

    2SA1204

    Abstract: 2SC2884
    Text: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		PDF 2SC2884 2SA1204 2SA1204 2SC2884

    2SC2882

    Abstract: No abstract text available
    Text: TO SHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm PO W ER AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • • • 1.6MAX —J— 1.7MAX. Suitable for Driver of 30~35 Watts Audio Amplifier P q = 1~2W (Mounted Ceramic Substrate)


    OCR Scan     		PDF 2SC2882 2SA1202 2SC2882

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SC2880 120MHz 2SA1200

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2883 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6MAX. • • • • Suitable for Output Stage of 3 Watts Amplifier P q = 1—2W (Mounted Ceramic Substrate) Small Flat Package


    OCR Scan     		PDF 2SC2883 2SA1203 961001EAA2'

    2SC1260

    Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
    Text: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930


    OCR Scan     		PDF 2SC2102 2SC2888 2SC2990 2SC2094 2SC1260 2SC930 2SC380 2SC923 2SC1345 2SC2021 2SC1260 2SC1815 2sc1424 2SC944 2SC2094 2SC1681 2SC2021 2SC1345

    nec 2sc3157

    Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
    Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419


    OCR Scan     		PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678

    NEC k 3654

    Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
    Text: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6


    OCR Scan     		PDF 2SC3643 2SC3536 2SC3644 2SC3535 2SC3737 2SC3738 NEC k 3654 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES

    2SA1203

    Abstract: 2SC2883
    Text: TOSHIBA 2SC2883 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • • 1.6 M AX — Suitable for Output Stage of 3 Watts Amplifier P q = 1—2W (Mounted Ceramic Substrate)


    OCR Scan     		PDF 2SC2883 2SA1203 250mm2 961001EAA2' 2SA1203 2SC2883

    marking POJ

    Abstract: 2SA1204 2SC2884
    Text: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6 M AX — High DC Current Gain : hjrE = 100~320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SC2884 2SA1204 250mm2 marking POJ 2SA1204 2SC2884

    2SA1203

    Abstract: 2SC2883
    Text: TO SH IBA 2SC2883 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • • Suitable for Output Stage of 3 Watts Amplifier P q = 1~2W (Mounted Ceramic Substrate) Small Flat Package


    OCR Scan     		PDF 2SC2883 2SA1203 250mm2 2SA1203 2SC2883

    2SA1202

    Abstract: 2SC2882
    Text: TOSHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm POWER AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. 1.7MAX. • Suitable for Driver of 30~35 Watts Audio Amplifier • Pq = 1~2W (Mounted Ceramic Substrate)


    OCR Scan     		PDF 2SC2882 2SA1202 250mm2 -55-truments, 2SA1202 2SC2882